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Daniel EsperanteIFIC – 13 Jun 2012 Electrónica para nuevos detectores de Belle-II e ILC.

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Presentation on theme: "Daniel EsperanteIFIC – 13 Jun 2012 Electrónica para nuevos detectores de Belle-II e ILC."— Presentation transcript:

1 Daniel EsperanteIFIC – 13 Jun 2012 Electrónica para nuevos detectores de Belle-II e ILC

2 Daniel EsperanteIFIC – 13 Jun 2012 DEPFET: Vertex detector Vertex Locator of Belle-II and possible option for ILC Beam Piper = 10mm DEPFET pixels Layer 1r = 14mm Layer 2r = 22mm DSSD Layer 3r = 38mm Layer 4r = 80mm Layer 5r = 115mm Layer 6r = 140mm 2 Mechanical mockup of pixel detector Zdeněk Doležal Prototype DEPFET pixel sensor and readout DEPFET matrix DCDB R/O chip Switcher control chip 2

3 Daniel EsperanteIFIC – 13 Jun 2012 DEPFET Principle Invented in MPI Munich p-channel FET on a completely depleted bulk A deep n-implant creates a potential minimum for electrons under the gate (“internal gate”) Signal electrons accumulate in the internal gate and modulate the transistor current (g q ~ 400 pA/e - ) Accumulated charge can be removed by a clear contact (“reset”) Fully depleted:  large signal, fast signal collection Low capacitance, internal amplification → low noise Charge collection always active but transistor on only during readout: low power Complete clear  no reset noise DEPFET allows to build low mass, high S/N detector! Depleted p-channel FET 3

4 Daniel EsperanteIFIC – 13 Jun 2012 Array of DEPFETs Row wise read-out ("rolling shutter")  select row with external gate, read current, clear DEPFET, read current again  the difference is the signal  only one row active  low power consumption  two different auxiliary ASICs needed 4

5 Daniel EsperanteIFIC – 13 Jun 2012 DEPFET Ladder The basic unit is the DEPFET ladder Central region covered with thin sensors Switchers on the lateral balcony Front end at both ends DEPFET thinning down to 50 um 5

6 Daniel EsperanteIFIC – 13 Jun 2012 Module production Depfet module construction at HLL (Munich). Readout chips developed by Bonn and Mannheim groups. Flip-chip at CNM (BCN). First module testing and rework (VLC). Final assembly (TBD). EMCM module to proof the design concept 6

7 Daniel EsperanteIFIC – 13 Jun 2012 Production-rework site Test system setup: Powering scheme fully automated Probe needle card to be built Maybe a flying needle needed for the probe- station P120612_17.57.jpg X-ray inspection machine:Rework flip-chip machine: At least 100 KV (max. 130 kV) 10 W (max. 39 W) 3μm detail detectability 5 axis (rotation) Automatic software to detect: shorts, openings, voids, ball size and shape, misalignments Also automatic software to analyze wire-bonds quality and characteristics like wire separation, height, uniformity, Rework station, flip-chip machine characteristics: Specific tools to handle the DEPFET chips Unsolder single components Solder cleaning: suck out mechanism, different nozzles and both nozzles and chuck with temperature ramping control, stereo microscope Placement of passive components: programmable system to dispense solder Module to do flip-chip (ultrasounds + thermal) 7

8 Daniel EsperanteIFIC – 13 Jun 2012 Samples X-Ray machine 8

9 Daniel EsperanteIFIC – 13 Jun 2012 DEPFET thermal studies Fully enclosed volume with Cu dummies and Si resistive sample in outer layer, using Stainless steel Cbs. 24 (6.35 mm x 12.70 mm) resistive heaters simulating DCD-DHP dissipation N2 gas cooled through Cu coil in LN2 Dewar atmosphere BP connected to chiller PT100 sensors ( CO 2 and Air inlets (along w/ tipp ex marks to confirm by thermal imaging), Cu ladders adjacent to the resistive ladder, cooling Block, beam pipe) Thermal imaging camera IFCA FBG sensors (Acrylate and polyamide pairs). (B etween BP and inner layer, between inner and outer layer, over outer layer) C. Lacasta, A. Oyanguren, P. Ruiz, J.Mazorra 9

10 Daniel EsperanteIFIC – 13 Jun 2012 DEPFET thermal studies Low power tests (6W in the heaters, 6W in the DCD/DHP module) Right DCD/DHP stopped working, measurements only have the left module dissipating heat 10

11 Daniel EsperanteIFIC – 13 Jun 2012 Humidity sensors and RO Sensors => UPS-500 or UPS-600 from Ohmic instruments.  Capacitive+resistive sensor  Precision 5% RH [20 ± 90% RH]  Used in CMS ECAL and tested for radiation tolerance (at least ~50 KGy)  12 samples bought and being characterized in climate chamber soon Sensor (x2 in detector ?) Sample of sensor with integrated readout, but RO not tested for radiation tolerance Readout => now, using ARDUINO in lab (USB)  Atmel micro-controller, 6 ADC channels, USB, mezzanine cards can be plugged in.  Could be tested for low radiation dose tolerance and put some meters away from the detector.  Already functional in lab. 6,5 X 5,5 cm 11

12 Daniel EsperanteIFIC – 13 Jun 2012 Humidity sensors and RO The idea: “In-detector”: sensor + rad tolerant instrumentation amplifier “Services-area”: Arduino RO + AC oscillator + AC-DC conversion Where are the control computers located?? 10 m cable?? The same readout system could be used to read out other types of capacitive sensor (ie, position monitoring sensors??) The Arduino (+ some signal conditioning circuitry) could be used to read out PT1000 sensors as well To be done: characterize the sensors in climate chamber, built the electronics to condition and readout the sensors and perform an irradiation test 12

13 Daniel EsperanteIFIC – 13 Jun 2012 TAKI-Chip Monolithic particle pixel-detector implemented as system on a chip in a high-voltage 0.35 1m CMOS technology One sample in the office to be tested. 13

14 Daniel EsperanteIFIC – 13 Jun 2012 14 Esperemos no llegar a esto…!!


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