Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 1 Introduction to Electronic Circuit Design.

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Presentation transcript:

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 1 Introduction to Electronic Circuit Design Richard R. Spencer Mohammed S. Ghausi

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 2 Figure 2-2 Covalent bonding of silicon.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 3 Figure A2-1 Energy band diagram. The vertical scale is energy, and the horizontal scale is distance in one dimension. These scales are understood and are not usually shown in band diagrams.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 4 Figure A2-2 The density of states, the Fermi function, and the carrier concentrations for intrinsic silicon at equilibrium.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 5 Figure A2-3 Band diagrams for (a) intrinsic, (b) n-type, and (c) p-type silicon.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 6 Figure 2-6 (a) A metal-and-silicon system, (b) the corresponding band diagram, (c) the charge density, (d) the electric field, and (e) the electric potential.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 7 Figure 2-7 The band diagrams for the system of Figure 2-6 with applied bias.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 8 Figure 2-8 The diode equation from (2.20). Equation (2.20)

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 9 Figure 2-13 A pn junction at equilibrium: (a) the junction, (b) charge density profile, (c) electric field, and (d) current components.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 10 Figure 2-17 (a) A pn junction at equilibrium, (b) the charge profile, (c) the electric field, and (d) the potential.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 11 Figure 2-23 Minority-carrier charge density profiles: (a) no applied bias, (b) reverse bias, and (c) forward bias.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 12 Figure 2-24 Current components in a forward-biased pn junction. Note that the net diffusion currents are only constant in the depletion region because of our definition; see the text for details.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 13 Figure 2-25 Current components in a reverse-biased pn junction. Note that the net drift currents are only constant in the depletion region because of our definition; see the text for details. Drift

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 14 Figure 2-34 Minority carrier densities for a BJT biased in the forward-active region of operation.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 15 Figure 2-37 Collector characteristics of an npn transistor.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 16 Figure 2-38 The width of the collector-base depletion region varies with the collector voltage, resulting in a variation in the active base width W B. The slope of the minority- carrier density then changes, as shown by the two densities drawn.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 17 Figure 2-44 A simplified MOSFET structure.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 18 Figure 2-45 The charge in the inversion layer as a function of V D : (a) small values of V D, (b) larger values of V D, (c) pinch-off, and (d) V D greater than pinch-off.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 19 Figure 2-58 The drain characteristics of an n-channel MOSFET.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 20 Figure 2-59 MOSFET channel when V DS > V GS – V th.

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 21 Figure 2-61 Charge present in a MOSFET biased with V GS > V th. The charge in the metal must balance the sum of the inversion layer charge and the charges in the depletion region under the gate. The charge in the inversion layer is shown as mobile charge, whereas the charges in the depletion region have circles around them to indicate that they are bound charges (ionized acceptors).

Spencer/Ghausi, Introduction to Electronic Circuit Design, 1e, ©2003, Pearson Education, Inc. Chapter 2, slide 22 Figure 2-72 (a) The basic structure of an SCR, (b) a circuit model for the device, and (c) the resulting i-v characteristic.