Bit Cell Ratio Testing. Thin Cell Advantages: Smallest possible area of 6T Bit Cell, Can be mirrored (saves area = can reduce distance between n-wells.

Slides:



Advertisements
Similar presentations
Jongsok Choi M.A.Sc Candidate, University of Toronto.
Advertisements

Digital Design: Combinational Logic Blocks
COEN 180 SRAM. High-speed Low capacity Expensive Large chip area. Continuous power use to maintain storage Technology used for making MM caches.
Combinational Circuits
Multiplexer. A multiplexer (MUX) is a device which selects one of many inputs to a single output. The selection is done by using an input address. Hence,
Decoders/DeMUXs CS370 – Spring Decoder: single data input, n control inputs, 2 outputs control inputs (called select S) represent Binary index of.
C H A P T E R 15 Memory Circuits
1 The Basic Memory Element - The Flip-Flop Up until know we have looked upon memory elements as black boxes. The basic memory element is called the flip-flop.
Idongesit Ebong (1-1) Jenna Fu (1-2) Bowei Gai (1-3) Syed Hussain (1-4) Jonathan Lee (1-5) Design Manager: Myron Kwai Overall Project Objective: Design.
Introduction to CMOS VLSI Design SRAM/DRAM
[M2] Traffic Control Group 2 Chun Han Chen Timothy Kwan Tom Bolds Shang Yi Lin Manager Randal Hong Wed. Oct. 27 Overall Project Objective : Dynamic Control.
Chapter 3 Continued Logic Gates Logic Chips Combinational Logic Sequential Logic Flip Flops Registers Memory Timing State Machines.
E-Voting Machine - Design Presentation Group M1 Bohyun Jessica Kim Jonathan Chiang Chi Ho Yoon Donald Cober Mon. Sept 29 System Hardware Component Diagram.
Low-Power CMOS SRAM By: Tony Lugo Nhan Tran Adviser: Dr. David Parent.
Modern VLSI Design 2e: Chapter 6 Copyright  1998 Prentice Hall PTR Topics n Memories: –ROM; –SRAM; –DRAM. n PLAs.
COMPUTER ARCHITECTURE & OPERATIONS I Instructor: Hao Ji.
Multiplexer MUX. 2 Multiplexer Multiplexer (Selector)  2 n data inputs,  n control inputs,  1 output  Used to connect 2 n points to a single point.
Decoder Mano Section 4.9. Outline Decoder Applications Verilog.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 28: November 15, 2013 Memory Periphery.
Chapter-2 Standard Cell Techniques IC Mask Design 集成电路版图培训.
Toshiba Standard Cell Architecture for High Frequency Operation Peter Hsu, Ph.D. Chief Architect Microprocessor Development Toshiba America Electronics.
Sakari tiuraniemi - CERN Status of the submission – End of Column.
High Speed 64kb SRAM ECE 4332 Fall 2013 Team VeryLargeScaleEngineers Robert Costanzo Michael Recachinas Hector Soto.
Review: Basic Building Blocks  Datapath l Execution units -Adder, multiplier, divider, shifter, etc. l Register file and pipeline registers l Multiplexers,
Digital Logic Structures. Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. 3-2 Roadmap Problems Algorithms.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 28: November 16, 2012 Memory Periphery.
High Speed Cache For: PICo Board Proposal By: Team XOR NOTE TO FUTURE VIEWERS OF THESE SLIDES: ALL YELLOW TEXT BOXES ACCOMPANIED BY ARROWS IN THE DIRECT.
Modern VLSI Design 4e: Chapter 6 Copyright  2008 Wayne Wolf Topics Memories: –ROM; –SRAM; –DRAM; –Flash. Image sensors. FPGAs. PLAs.
SRAM DESIGN PROJECT PHASE 2 Nirav Desai VLSI DESIGN 2: Prof. Kia Bazargan Dept. of ECE College of Science and Engineering University of Minnesota,
1 Euler Graph Using Euler graph to draw layout. 2 Graph Representation Graph consists of vertices and edges. Circuit node = vertex. Transistor = edge.
Z. Feng MTU EE4800 CMOS Digital IC Design & Analysis 12.1 EE4800 CMOS Digital IC Design & Analysis Lecture 12 SRAM Zhuo Feng.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 24: November 5, 2010 Memory Overview.
Electronic Circuit Diagrams
McKenneman, Inc. SRAM Proposal Design Team: Jay Hoffman Tory Kennedy Sholanda McCullough.
Synopsys Custom Designer Tutorial for a chip integration using the University of Utah Standard Cell Libraries In ON Semiconductor 0.5u C5 CMOS Version.
Schematic Diagrams Schematic diagrams are used to graphically represent the components and interconnections of electrical circuits. Electronic schematics.
Low-Power SRAM ECE 4332 Fall 2010 Team 2: Yanran Chen Cary Converse Chenqian Gan David Moore.
4. Computer Maths and Logic 4.2 Boolean Logic Logic Circuits.
Advanced VLSI Design Unit 04: Combinational and Sequential Circuits.
Objectives Understand the design environment and flow
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 28: November 16, 2011 Memory Periphery.
Computer Science 210 Computer Organization Control Circuits Decoders and Multiplexers.
Decoder/Demultiplexer
Dynamic Memory Cell Wordline
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 28: November 7, 2014 Memory Overview.
SRAM Design for SPEED GROUP 2 Billy Chantree Daniel Sosa Justin Ferrante.
Multiplexors Decoders  Decoders are used for forming separate signals for different combination of input signals.  The multiplexer circuit is a digital.
Penn ESE370 Fall DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 28: November 8, 2013 Memory Overview.
Low Power SRAM VLSI Final Presentation Stephen Durant Ryan Kruba Matt Restivo Voravit Vorapitat.
CSE477 L21 Multiplier Design.1Irwin&Vijay, PSU, 2002 CSE477 VLSI Digital Circuits Fall 2002 Lecture 21: Multiplier Design Mary Jane Irwin (
Static and Dynamic Memory
Robust Low Power VLSI R obust L ow P ower VLSI Using Module Compiler to build FPGA Structures Seyi Ayorinde ECE 6505.
Written by Whitney J. Wadlow
ECE445: Senior Design Spring 2015 Team 17: Weather Jukebox Sang Yun Bang, Thomas Fedrigon, Shanda Lu.
Schematic Diagrams Schematic diagrams are used to graphically represent the components and interconnections of electrical circuits. Electronic schematics.
Appendix B The Basics of Logic Design
Designing a Low Power SRAM for PICo
Layout of CMOS Circuits
Lecture 19: SRAM.
More Devices: Control (Making Choices)
Appendix B The Basics of Logic Design
Computer Science 210 Computer Organization
Day 26: November 11, 2011 Memory Overview
Multiple Drain Transistor-Based FPGA Architectures
Amr Amin Preeti Mulage UCLA CKY Group
Where are we? Lots of Layout issues Line of diffusion style
Click the LH mouse button to begin the animation
SRAM Generator - Satya Nalam.
ECE 352 Digital System Fundamentals
Day 26: November 10, 2010 Memory Periphery
Presentation transcript:

Bit Cell Ratio Testing

Thin Cell Advantages: Smallest possible area of 6T Bit Cell, Can be mirrored (saves area = can reduce distance between n-wells and p-wells)

2by2 Array of Thin Cell Layout Advantages: WLs are horizontal, VDD/VSS/BL/BLB are vertical, Mirrored Thin Cells save area and make it easy to add N/P Taps, Easy to Cascade to other 2by2 Arrays

Buffers (First Inv = Min Size, Second Inv = 4x Min) Advantages: Needs to be thin to have 2 Buffers to be smaller than the width of a Thin cell, Easy to souce VDD and VSS, Easily connect inputs and outputs (top and bottom of diagram), Easily N-Tapped, P-Tapped

Word Select (1to2 DEMUX) – Sends Data to Column Advantages: Data comes from top, Address from side (design decision), N-wells together, P-wells together (easy to add N-taps and P-taps), easily mirrored

TX Gates (4x Min Size) – Disconnects BL Drivers, Avoids Fight between Bitcells and BL Drivers Advantages: Outputs nicely spread apart, Select lines are all tied together and come in from side, Inputs from top, Outputs on bottom, Easily N- Tapped and P-Tapped from left or right side, Easily mirrored.

Precharge/BL/BLB Generator Advantages: Pitched Matched (Made it as thin as possible while fitting it in with rest of circuit), BL/BLB are on the outsides running vertically, Easily P-Tapped, N-Tapped, Thin, PRECH, WRITE, and Data Signals

Sense Amp Advantages: Wanted as short as possible, but width had to be smaller than width of Thin Cell, Similar to Thin Cell by using Cross Coupled Inverter layout, Easily mirrored, Easily P-Tapped, N-Taped

1 SRAM Block Advantages: Symmetrical, Pitched Match (All separate components fit in nicely), 1 VDD/VSS source for Bit Cell Array, Can be mirrored, Most inputs, Inputs come in from Left and Top side

Block Pair Merger Schematic

Block Pair Merger

Block Pair

Decoder

Layout Diagram (Connections Removed to Reduce Clutter)