TSC results - University of Hamburg I. Pintilie a),b), E. Fretwurst b), G. Lindström b) J. Stahl b) and F. Hoenniger b) a) National Institute of Materials.

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Presentation transcript:

TSC results - University of Hamburg I. Pintilie a),b), E. Fretwurst b), G. Lindström b) J. Stahl b) and F. Hoenniger b) a) National Institute of Materials Physics, Bucharest-Magurele, P.O.Box MG-7, Romania b) Institute for Experimental Physics, Hamburg University, D-22761, Germany Publications I. Pintilie, E. Fretwurst, G. Lindstroem and J. Stahl, Appl. Phys. Lett. 81, No 1 (2002) 165 I. Pintilie, E. Fretwurst, G. Lindstroem and J. Stahl, Appl. Phys. Lett. 82, No 13 (2003) 2169 I. Pintilie, E. Fretwurst, G. Kramberger, G. Lindstroem, Z. Li and J. Stahl, Physica B: Condensed Matter (2003) 578 I. Pintilie., E. Fretwurst, G. Lindstroem and J. Stahl, Nucl. Instr. and Meth. A 514 (2003) 18 G. Lindstroem, E. Fretwurst, G. Kramberger, I. Pintilie, Journal of Optoelectronics and Advanced Materials Vol. 6, No. 1, (2004) 23 J. Stahl, E. Fretwurst, G. Lindstroem and I. Pintilie, Physica B: Condensed Matter (2003) 705 I. Pintilie, L. Pintilie, M. Moll, E. Fretwurst and G. Lindstroem, Appl. Phys. Lett 78 (2001) 550 J. Stahl, PhD Thesis, Hamburg University, 2004, DESY-Thesis , ISSN E. Fretwurst, G. Lindstroem, J. Stahl, I. Pintilie, Z. Li, J. Kierstead, E. Verbitskaya and R. Röder, Nucl. Instr. and Meth. A 514 (2003) 1-8

Material : - STFZ, DOFZ, Cz and EPI (25, 50, 75  m) diodes - p + nn + Si diodes, processed by CiS/Erfurt Germany Irradiation : - Co 60  -source at BNL, dose range 90 to 500 Mrad - CERN (24 GeV protons) up to 6x10 14 /cm 2 Measurements: C-V, I-V, at RT Thermally Stimulated Current SampleSTFZDOFZEPI/Cz (50  m) Cz SIMS [O]<5* *10 17  9* *10 17

Detected Trapping levels NoLevelMethodEa(eV)   n /  p cm 2 MaterialObs. 1 H(42K)TSC /0.5 DOFZ, Cz, Epi 150C-an-out 2H(47K) TSC +0.1 /1 DOFZ, Cz, Epi 3 E(50K)TSC DOFZ, Cz, Epi150C-an-out, IO 2 4 VO -/0 DLTS, TSC less in STFZ 5 H(87K)TSC +0.2/2 DOFZ, Cz, Epiafter 150C ann. 6 I +/0 TSC /1 7 BD(98K)TSC DOFZ, Cz, EpiBistable donor - TDD 8 VV =/- DLTS 9 CiOi +/0 DLTS,TSC 10 E(147K)TSC 11 VV -/0 DLTS,TSC 12 I 0/- DLTS,TSC0.545/ /90 suppressed in DOFZ, V 2 O 13  DLTS,TSC /5 suppressed in DOFZ /

A) Co 60 -  irradiation ( Mrad doses) STFZ: -H(97K) -more I -more  DOFZ: -BD tail + E(50K) -more VO i I defect - almost quadratic dose dependence  defect formed through a second order procces (VO+V?)

DOFZ – different experimental procedures TDD1 and TDD2 in n type Si are bistable thermal donors (BTD) – they can exist also in a configuration which forms an Anderson negative U-system

Donor activity of BD(98K) centers If the Poole Frenkel effect is present  a shift of TSC peak to lower T should be seen when increasing the applied bias  H = eV xV 1/4

Gamma irradiation -Influence of I,  and BD defects on detector properties excellent agreement with the I-V and C-V results at RT!

High temperature annealing studies  I center – stable at C for the first 460 min STFZ I) The I defect

II) The X center STFZ – 300 Mrad In STFZ material the formation of X center is independent on the annealing of V 2

Epi/Cz - same irradiation dose (520 Mrad) and annealing at different T T = C T = C Increasing the annealing temperature [X] increases  althougth [V 2 ] is the same  The contribution of other defect/impurity becomes important at high T

T = C Dose = 305 MradDose = 520 Mrad Increasing the irradiation dose [X] increases  more than the initial [V 2 ]  the involvement of other radiation induced defect (like VO center) in the formation of X centers is possible Epi/Cz - same annealing T but different irradiation doses

B) 23 GeV proton irradiation (fluences up to 6x10 14 /cm 2 ) The BD and I defect concentrations can explain ~90% from  Neff ~10% of the  LC

Summary Co 60 – gammas: the radiation induced change of detector properties is understood on the basis of generated defect levels Two defects the BD and the I-defect are mainly responsible for the macroscopic performance of the diodes - The I centers (acceptor like at RT) are the source for both introduction of negative space charge and the increase of the LC - The BD defects are the source for the increase of the positive space charge with the dose in DOFZ diodes and can compensate the deep acceptors effect 24 GeV proton irradiation: Very promising results in the case of EPI/Cz silicon – most likely due to a large concentration of oxygen dimers migrating from the CZ substrate Future plans: Investigation of BD, I and X centers after high levels of Co 60 -gamma and 23 GeV proton irradiation in:  cm standard and oxygenated Epi/Cz (n and p-type, 70, 100 and 150  m )  cm FZ silicon (50  m)