Performance Predictions for Carbon Nanotube Field-Effect Transistors

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Presentation transcript:

Performance Predictions for Carbon Nanotube Field-Effect Transistors D.L. Pulfrey, D.L. John, L.C. Castro pulfrey@ece.ubc.ca Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada

Single-Walled Carbon Nanotube Hybridized carbon atom  graphene monolayer  carbon nanotube 2p orbital, 1e- (-bonds)

VECTOR NOTATION FOR NANOTUBES Zig-zag (6,0) Chiral tube (5,2) Tube Structure (n,m): Armchair (3,3) Adapted from Richard Martel

Compelling Properties of Carbon Nanotubes NANOSCALE -- no photolithography BANDGAP TUNABILITY -- 0.5-1.5eV METALS AND SEMICONDUCTORS -- all-carbon ICs BALLISTIC TRANSPORT -- 20-300nm STRONG COVALENT BONDING -- strength and stability of graphite -- no surface states (less scattering, compatibility with many insulators) HIGH THERMAL CONDUCTIVITY -- almost as high as diamond (dense circuits) SELF-ASSEMBLY -- biological, recognition-based assembly

Self-assembly of DNA-templated CNFETs K.Keren et al., Technion.

Self-assembly of DNA-templated CNFETs K.Keren et al., Technion.

CLOSED COAXIAL NANOTUBE FET STRUCTURE chirality: (16,0) radius: 0.62 nm bandgap: 0.63 eV length: 15 - 100 nm oxide thickness: (RG-RT): 2 - 6 nm

MODE CONSTRICTION and TRANSMISSION E T kz CNT (few modes) kx Doubly degenerate lowest mode T CNT (few modes) Interfacial G: even when transport is ballistic in CNT METAL (many modes) 155 S for M=2

CURRENT in 1-D SYSTEMS The Landauer current

General non-equilibrium case 1D DOS E f(E) EFS 0.5 E f(E) EFD 0.5 Non-equilib f(E-EC,z) Q(z,E)=qf(E-EC,z)g(E-EC,z) Solve: 1. Self-consistent SP 2. Compact model

Quantum-mechanical treatment Need full QM treatment to compute: -- Q(z) within barrier regions -- Q in evanescent states (MIGS) -- resonance, coherence -- S  D tunneling. Quantum-mechanical treatment Emid

Transmission Probability TS Comparison SP CM2 CM1 VGS=VDS=0.4 V Emid D.L. John et al., Nanotech04, March 2004

Drain I-V Comparison CM1 VGS=0.4V CM2 SP L.C. Castro et al., Nanotechnology, submitted.

I-V dependence on S,D workfunction Negative barrier (p-type) device Positive barrier (p-type) device VGS = -0.4 V D.L. John et al., Nanotech04, March 2004

gate Cins Q insulator Quantum Capacitance - - + - CQ nanotube source

"Quantum" Capacitance in CN VDS=0 VDS=0.2V Band 1 Band 2 D.L. John et al., JAP, submitted.

Transconductance: the Ultimate Limit f(E) EFS 0.5 EFD EC

CONCLUSIONS CNs have excellent thermal and mechanical properties. CNFETs can be self-assembled via biological recognition. QMR is important in negative-barrier SB-CNFETs. High DC currents and transconductances are feasible. Capacitance is not quantized. CNFETs deserve serious study as molecular transistors.