ELECTRONICS DEVICE ELCTRONICS DEVICE Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc. : Arief Udhiarto, M.T Source : U.C. Berkeley

Schedule Lectures: K.301 Mon. 15:00-15.50 AM K.301 Wed. 13.00-14.50 AM Electrical Engineering Department University of Indonesia

Relation to Other Courses Prerequisite: Simple pn-junction, BJT and MOSFET theory; BJT and MOSFET circuit applications. Familiarity with the Bohr atomic model Relation to other courses: Electronics Circuit Electrical Engineering Department University of Indonesia

Reading Material Primary Text : References Text: Semiconductor Device Fundamentals : R. F. Pierret (Addison Wesley, 1996) References Text: Solid State Electronic Devices 4th Edition: B. G. Stretman, S. Banerjee (Prentice Hall, 2000) Device Electronics for Integrated Circuits 3rd Edition: R. Muller, T. Kamins (Wiley & Sons, 2003) Electrical Engineering Department University of Indonesia

SAP 1. Course : Electronics Device 2. Course Code : EES 210804 SKS: 4 Semester: 3 3. Instructor : Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH) Arief Udhiarto, M.T (AU) 4. Class System : Single 5. Course’s Objective : mastering in basic concept of integrated- circuit operation devices specially in silicon- integrated circuits 6. Grading System (%) : Homework (10) , MT (35) , Seminar (15) , FT (40) Electrical Engineering Department University of Indonesia

Miscellany Academic (dis)honesty Classroom etiquette: Departmental policy will be strictly followed Collaboration (not cheating!) is encouraged Classroom etiquette: Arrive in class on time! Turn off cell phones, pagers, MP3/MP4 players, etc. No distracting conversations Ask question as much as possible Electrical Engineering Department University of Indonesia

Pre Test What do you know about atom, electron, and hole? What are the differences between conductor and semiconductor? What is majority carrier related to semiconductor! 10 Minutes only Electrical Engineering Department University of Indonesia

Course Outline PN-Junction Diode Semiconductor Fundamentals; Metal-Semiconductor Contact Bipolar Junction Transistor IC Processing (other subject) MOSFET Electrical Engineering Department University of Indonesia

Overview of IC Devices and Semiconductor Fundamentals Reading Assignment : Pierret Chap 1, Chap 2 Electrical Engineering Department University of Indonesia

An IC consists of interconnected electronic components in a single piece ( chip ) of semiconductor material In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in silicon using SiO2 as the insulator and Al for the metallic interconnects. In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in germanium. Electrical Engineering Department University of Indonesia

Evolution of Bipolar Junction Transistors Point Contact BJT 1947 SiGe BJT 2000 Si Nanowire BJT 2003 Electrical Engineering Department University of Indonesia

From a Few, to Billions By connecting a large number of components, each performing simple operations, an IC that performs very complex tasks can be built. The degree of integration has increased at an exponential pace over the past ~40 years. The number of devices on a chip doubles every ~18 months, for the same price. Electrical Engineering Department University of Indonesia

Electrical Engineering Department University of Indonesia

IC Technology Advancement Improvements in IC performance and cost have been enabled by the steady miniaturization of the transistor Electrical Engineering Department University of Indonesia

Advantages of Technology Scaling • More dies per wafer, lower cost • Higher-speed devices and circuits Electrical Engineering Department University of Indonesia

Today and Tomorrow Electrical Engineering Department University of Indonesia

The Nanometer Size Scale Electrical Engineering Department University of Indonesia

State-of-the-art Transistor Size 1µm = 10-6m = 10-4 cm = 1000 nm 1 nm =10 Å Electrical Engineering Department University of Indonesia

CZ Crystal Growth Electrical Engineering Department University of Indonesia

Si Bulk Wafer Specifications Bulk Wafer Specifications Electrical Engineering Department University of Indonesia

Purity of Device Grade Si 99.999999999 % (so-called “eleven nines” ) Maximum impurity allowed is equivalent to 1 mg of sugar dissolved in an Olympic-size swimming pool. Electrical Engineering Department University of Indonesia

Flatness deviation and particle sizes Dimensions are equivalent to 1/1000 of a baseball placed inside a sports dome. Electrical Engineering Department University of Indonesia

Crystallographic Planes Electrical Engineering Department University of Indonesia

Miller Indices Crystallographic Notation h: inverse x-intercept k: inverse y-intercept l: inverse z-intercept (Intercept values are in multiples of the lattice constant; h, k and l are reduced to 3 integers having the same ratio.) Electrical Engineering Department University of Indonesia

Crystallographic Planes and Si Wafers Silicon wafers are usually cut along the (100) plane with a flat or notch to orient the wafer during IC fabrication Electrical Engineering Department University of Indonesia

Bulk Si Wafer to IC Chip Electrical Engineering Department University of Indonesia

Bohr Model Electrical Engineering Department University of Indonesia

Electrical Engineering Department University of Indonesia

Silicon Atom 1s, 2s, 2p orbitals filled by 10 electrons 4 nearest neighbors unit cell length = 5.43Å 5 × 1022 atoms/cm3 The Si Atom The Si Crystal “diamond cubic ” structure Electrical Engineering Department University of Indonesia

Conduction Band and Valence Band Electron Potential Energy Electrical Engineering Department University of Indonesia

The Simplified Energy Band Diagram Electrical Engineering Department University of Indonesia

Semiconductors, Insulators, and Conductors Totally filled band and totally empty bands do not allow current flow. (just as there is no motion of liquid in a totally filled or totally empty bottle Metal conduction band is half-filled Semiconductors have lower Eg’s than insulators and can be doped Electrical Engineering Department University of Indonesia

Compound Semiconductors “Zincblende Structure” III-V compound semiconductors : GaAs, GaP, GaN, etc. “important for optoelectronics and high speed ICs” Electrical Engineering Department University of Indonesia

Density of States Electrical Engineering Department University of Indonesia

Density of States at Conduction Band: The Greek Theater Analogy Electrical Engineering Department University of Indonesia

Concept of a “hole” An unoccupied electronic state in the valence band is called a “hole” Treat as positively charge mobile particle in the semiconductors Electrical Engineering Department University of Indonesia

Bond Model of Electrons and Holes Electrical Engineering Department University of Indonesia

Electrons and Holes Electrical Engineering Department University of Indonesia