UIC Physics Tessa Cooper Materials Science and Engineering Rutgers University Advisors: Dr. R. Klie and Q. Qiao Department of Physics, University of Illinois.

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Presentation transcript:

UIC Physics Tessa Cooper Materials Science and Engineering Rutgers University Advisors: Dr. R. Klie and Q. Qiao Department of Physics, University of Illinois

UIC Physics  Project description.  Methods to be used.  Results obtained for bulk SrTiO 3.  Results obtained for SrTiO 3 /GaAs interface.

UIC Physics  Characterize ultra-thin SrTiO 3 film on GaAs using Transmission Electron Microscopy (TEM), Electron Energy Loss Spectroscopy (EELS), and multiple scattering calculations.  Determine the effects of having interfacial O vacancies and Ti diffusion in the substrate.  Evaluate potential uses of this material in electrical and other applications.

UIC Physics  Molecular Beam Epitaxy is used to deposit monolayer films of SrTiO 3 on GaAs. GaAs support SrTiO 3 (4 ML) Direct Deposition Sample 2 GaAs support Ti pre-layer (0.5 ML) SrTiO 3 (4 ML) Ti pre-layer Deposition Sample 1 Intensity (arb.units) (a) (b) (c) (d) Energy ( eV ) As 3d bare GaAs Ti/GaAs SrTiO 3 /GaAs (2) SrTiO 3 /GaAs (1) R.F. Klie, Y. Zhu, Applied Physics Letters, 87, (2005).

UIC Physics Highly distinct interfaces are formed, which do not display differences in atomic structure whether or not a prelayer is used. 2.0 nm GaAs SrTi O Schematic drawing of interface: R.F. Klie, Y. Zhu, Applied Physics Letters, 87, (2005). Z-contrast image, SrTiO 3

UIC Physics GaAs Semiconducting Highly resistive High electron mobility Direct band gap SrTiO 3 Dielectric constant of 300 Mature deposition method Good substrate for other oxides. GaAs on (110) plane SrTiO 3 on (100) plane 45°

UIC Physics The properties of this system make it ideal for transistors and other electronic applications. Prelayer Correct orientation Minimized defects GaAs SrTi O

UIC Physics Use image simulations and multiple scattering calculations to model the atomic and electric structures, which helps to…  Interpret experimental results.  Support theories that are not obvious through experimentation.

UIC Physics

UIC Physics  FEFF9 relies on Full Multiple Scattering calculations to produce x-ray or electron behavior in a material.  Other methods are Fourier based calculations, which require periodic structures.

UIC Physics  O electrons are ejected from the K shell, closest to the nucleus.  Ti electrons are ejected from L II or L III.

UIC Physics  Used FEFF9 to produce O K and Ti L edges in bulk SrTiO 3.  Constructed GaAs/SrTiO 3 interface to use with the multiple scattering calculations.  Used FEFF9 to produce O K and Ti L edges at the interface of SrTiO 3.  With Oxygen vacancies  Without vacancies

UIC Physics

UIC Physics

UIC Physics Targeted a Ti atom at the middle of the interface from which to eject the electron, and removed O atoms around this atom. GaAsOTiSr

UIC Physics

UIC Physics Target a specific oxygen atom at the interface, and introduce oxygen vacancies surrounding that atom. GaAsOTiSr

UIC Physics

UIC Physics

UIC Physics

UIC Physics

UIC Physics

UIC Physics Targeted a specific oxygen atom at the center of the crystal structure, and introduced oxygen vacancies surrounding that atom. GaAsOTiSr

UIC Physics

UIC Physics  Bulk SrTiO 3 spectra can be reliably calculated for O K edge and Ti L edge.  Vacancy effect occurs in both Ti L edge and O K edge.  Oxygen vacancies can be shown by using FEFF9.

UIC Physics I would like to thank the following for making this research project possible: The National Science Foundation, EEC-NSF Grant # and CMMI-NSF Grant # Dr. Jursich and Dr. Takoudis The University of Illinois at Chicago