1. Effect of sputter-particle flux variations on properties of ZnO:Al thin films S. Flickyngerova 1, M. Netrvalova 2,L. Prusakova 2, I. Novotny 1, P.Sutta 2, V. Tvarožek 1, A. Pullmannova 1 1 Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia 2 Department New Technologies Research Center, The University of West Bohemia, Univerzitni 8, 306 14 Plzen, Czech Republic Corresponding author: sona.flickyngerova@stuba.sksona.flickyngerova@stuba.sk Special thanks to Dr. I. Vavra for TEM analyses Introduction The aim of our work has been to analyze the correlation between deposition arrangement and properties of ZnO:Al (AZO) films prepared by RF diode and RF magnetron sputtering from ceramic ZnO+2 wt. % Al 2 O 3 targets in Ar working gas. Variations of sputter-particle flux were performed by various positions of substrates in the sputtering system in addition with static mode SM (constant RF power) or with dynamic mode DM (rotation of substrate holder, constant RF power). Static diode mode of sputtering Dynamic magnetron mode of sputtering Plot of normalized electrical resistivity, integral transmittance and the optical band gap as a function of the sample position on the substrate holder Evolution of the electrical resistivity, biaxial lattice stress and crystallite size vs. sample position of AZO films deposited in the diode static mode and magnetron dynamic mode Conclusion Properties of AZO thin films deposited either in static or dynamic sputtering modes were significantly influenced by the local position of substrates on the substrate holder. This effect is caused particularly by an energetic ion-/electron- bombardment and high ability of Zn and Al to form various oxygen compounds. Dynamic magnetron mode of sputtering Static diode mode of sputtering  5 samples were fitted on circular rotated substrate holder  ceramic target AZO ( 76 mm in diameter) is eccentrically placed 150 mm under the substrate holder which is rotating at 96 rpm  for middle sample position x = 0 mm  sputtering power 400 W, at room temperature for 90 min  14 samples were placed on circular substrate holder under AZO target  ceramic target, ZnO+2 wt. % Al 2 O 3, with diameter of 152 mm  for middle sample position x = 0 mm  sputtering power 800 W, at room temperature for 17 min Normalized electrical resistivity as a function of the biaxial lattice stress for static and dynamic sputtering mode Optical band gap as a function of the biaxial lattice stress for static and dynamic sputtering mode Evolution of resistivity & optical band gap with biaxial stress Comparison of thin films properties sputtered in the static and dynamic mode TEM characterization of samples from the static mode Plan view TEM micrograph of ZnO:Al thin films. The mean grain size is approx. 50 nm for middle sample (a) 20 nm for peripheral sample (b) Cross-sectional TEM micrograph (bright field image) of ZnO:Al thin film reveals the columnar structure (a)(b) Electron diffraction confirms the hexagonal ZnO:Al phase reveals the preferential orientation (001) in normal to the film plane direction. ED is taken at beam perpendicular to the film plane Dynamic magnetron mode of sputtering lower resistivity  = 4.6 10 -3  cm (in comparison 4.1 10 -2  cm for SM) lower lattice stress - 2.8 GPa (in comparison - 6.41 GPa for SM) Static diode mode of sputtering higher integral transmittance T = 91% (in comparison 86% for DM) bigger size of crystalitte D = 134 nm (in comparison 108 for DM) Best results were obtained at samples from the middle of the substrate holder → x = 0 mm