NanoFab Simulator Layout Nick Reeder, Dec 16, 2011.

Slides:



Advertisements
Similar presentations
Tutorial 3 Refractor assignment, Analysis, Modeling and Statics
Advertisements

Working with Profiles in IX1D v 3 – A Tutorial © 2006 Interpex Limited All rights reserved Version 1.0.
Photolithography Machine Control System RIT Computer Engineering Senior Design Project Ben ConradFebruary 13, 2004Mark Edwards User Interface Seven Executable.
I have seen this happen !. You have exceeded your storage allocation.
Process Flow : Overhead and Cross Section Views ( Diagrams courtesy of Mr. Bryant Colwill ) Grey=Si, Blue=Silicon Dioxide, Red=Photoresist, Purple= Phosphorus.
Advanced Manufacturing Choices
Simplified Example of a LOCOS Fabrication Process
CMOS Process at a Glance
Fabrication pH Electrode Using Lift-Off Method and Electrodeposition Presented by Na Zhang.
Lithography Explored Leslie Chapman June 27, 2007.
NanoFab Simulator Update Nick Reeder, May 31, 2012.
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.
11/8/2004EE 42 fall 2004 lecture 291 Lecture #29 CMOS fabrication, clocked and latched circuits Last lecture: PMOS –Physical structure –CMOS –Dynamic circuits.
Zarelab Guide to Microfluidic Lithography Author: Eric Hall, 02/03/09.
Sample Devices for NAIL Thermal Imaging and Nanowire Projects Design and Fabrication Mead Mišić Selim Ünlü.
■ DEMO#1: Manual Teaching Mode, Task Creation, Basic Autonomous Run ■ DEMO#2: Obstacle Avoidance Demo ■ DEMO # 3: Complete reproduction of manual drive.
The Deposition Process
YoHan Kim  Thin Film  Layer of material ranging from fractions of nanometer to several micro meters in thickness  Thin Film Process 
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING
Device Fabrication Example
NanoFab Trainer Update Nick Reeder, April 11, 2014.
DEMONSTRATION FOR SIGMA DATA ACQUISITION MODULES Tempatron Ltd Data Measurements Division Darwin Close Reading RG2 0TB UK T : +44 (0) F :
NanoFab Trainer Update Nick Reeder, March 14, 2014.
Lecture 4 Photolithography.
Microfluidics: Catalytic Pumping Systems Paul Longwell Hollidaysburg Area High School Summer 2005.
NanoFab Simulator Update Nick Reeder, April 20, 2012.
CS/EE 6710 CMOS Processing. N-type Transistor + - i electrons Vds +Vgs S G D.
NanoFab Trainer Update Nick Reeder, April 5, 2013.
CNT Based Solar Cells MAE C187L Joyce Chen Kari Harrison Kyle Martinez.
Chris A. Mack, Fundamental Principles of Optical Lithography, (c) Figure 1.1 Diagram of a simple subtractive patterning process.
Copyright © 2007, Oracle. All rights reserved. Managing Concurrent Requests.
Passage Three Multimedia Application. Training target: In this part , you should try your best to form good reading habits. In order to avoid your ill.
I have seen this happen !. You have exceeded your storage allocation.
Windows Tutorial Common Objects ACOS: 1, 4. Using the Taskbar 1. Using the taskbar, you can switch between open programs and between open documents within.
II-Lithography Fall 2013 Prof. Marc Madou MSTB 120
Tools - Implementation Options - Chapter15 slide 1 FPGA Tools Course Implementation Options.
Basic & Advanced Reporting in TIMSNT ** Part Two **
Virtual NanoFab A Silicon NanoFabrication Trainer
Chapter 9: Visual Programming Basics Object-Oriented Program Development Using Java: A Class-Centered Approach.
Introduction to CMOS VLSI Design CMOS Fabrication and Layout Harris, 2004 Updated by Li Chen, 2010.
Introduction to Prototyping Using PolyMUMPs
Device Design: Stage 2 (Modified Microchannel Design) Device Objective –To test the viability of a two-level passive micro-fluidic device Modifications.
PTC Proposal Seongjin Jang September 09, Submit Application To PTC All the users should submit their process-related information to Process Technology.
NanoFab Trainer Nick Reeder June 28, 2012.
ISAT 436 Micro-/Nanofabrication and Applications Photolithography David J. Lawrence Spring 2004.
Chapter 3 Response Charts.
CS 281 – Fall 2015 Lab 4 Parametric Query and Forms in MS Access.
Substitute beer and pizza?. Basic Silicon Solar Cell as fabricated in Cameron With Schematic.
NanoFab Trainer Update Nick Reeder, March 1, 2013.
Section 1-3: Graphing Data
Dynamic Behavior of MOS Transistor. The Gate Capacitance t ox n + n + Cross section L Gate oxide x d x d L d Polysilicon gate Top view Gate-bulk overlap.
CMOS VLSI Fabrication.
NanoFab Trainer Update Nick Reeder, April 25, 2014.
Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.
Definition History Fabrication process Advantages Disadvantages Applications.
Process technology. Process Technology 2 MMIC-HEMT, ETH Zürich Electrical nm contacts, Uni Basel Luft InP 70 nm DFB Laser, WSI München Applications: Nano.
Utah Nanofab Design Review Meeting Device Architecture (Top View Layout and Layer Cross Section) Recipes & Settings Standard Concept Equipment & Tools.
Wisconsin Center for Applied Microelectronics
Integrated Circuits.
EE 3311/7312 MOSFET Fabrication
CMOS Fabrication CMOS transistors are fabricated on silicon wafer
Building a User Interface with Forms
NanoFab Simulator Update
VLSI System Design LEC3.1 CMOS FABRICATION REVIEW
Silicon Wafer cm (5’’- 8’’) mm
LITHOGRAPHY Lithography is the process of imprinting a geometric pattern from a mask onto a thin layer of material called a resist which is a radiation.
Anti-Reflective Coatings
Laboratory: A Typical Lithography Process
NanoFab Trainer Update
Photolithography.
Presentation transcript:

NanoFab Simulator Layout Nick Reeder, Dec 16, 2011

Proposal: Structure of User Activity User is presented with a starting wafer (which may or may not be blank) and a desired ending wafer. User must perform process(es) in sequence to get from start to finish. Example: Start Finish

Proposal: History Tab At any point, user can review the processes he has performed so far and their cumulative effect on the wafer.

Decision: “Revert To” Option? If user wants to undo one or more completed processes, does he have the option to revert to a prior stage in the history, or must he start over again?

Decision: Processes or Resources? User chooses which process to perform next. User chooses which resources to use next.

Decision: How to Represent Various Materials in 2-D Cross Sections? ColorsFill textures

Decision: List of Materials That Can Appear in 2-D Cross Sections? Substrate (Is this always silicon?) – Intrinsic – Doped Contaminants – Dust – Residue from chemical rinsing Photoresist (of specified type) – Liquid – Baked Deposited film (of specified type) …Others?

Decision: Displaying Dimensions? Dimensions always displayed Dimensions displayed at user’s request Never displayed. User must measure.

Decision: Menus or Toolbars? MenusToolbar

Decision: Instantaneous or Real-time? When user initiates a process, does it complete immediately, or take a realistic amount of time to complete? How many of the processes require visual monitoring by the user to decide when process is complete? (We discussed having videos of spin coating process that show changing appearance of photoresist as time passes.)

Decision: Number of Views? Is cross-section view adequate, or for masking (and perhaps other processes?), do we need to provide a top view as well?

Decision: How Many Modes of Operation? Possible modes: – Demo – Single-process – Sequence Are assessment results to be recorded in a database for instructor’s use, or just self- assessment for student?

Spin Coating Simulation Nick Reeder, Dec 16, 2011

Task Analysis For each process to be simulated, we must perform a detailed task analysis that identifies, for each process: – Equipment and materials required – Input parameters to be set – User actions We must then decide which of these actions and parameters to include in the simulation.

Example: Task Analysis for Spin Coating Process 1.Setup (in any order?) – Turn power on. – Place wafer in spin coat machine. – Select type of photochemical and apply to wafer. – Set parameters: Time Revolutions per minute. Acceleration. – Activate vacuum. – Activate nitrogen purge. – Place napkins to absorb excess photochemical. 2.Activate motor and wait until it stops automatically. 3.Wrap-up (in any order?) – Remove wafer. – Remove napkins. – Deactivate vacuum. – Deactivate nitrogen purge. – Turn power off.

Questions: Photochemicals AZ 6632 AZnLOF 2070 LOR 3A LOR 10B LOR 30B ma-P 1275-HV MCC Primer PMMA SPR 505 SPR 955 SU SU SU SU8 Thinner Thinner P UVN 30 How many classes of chemicals are we simulating? Photoresist (Positive and negative? Lift-off?) Thinner Primer Which of these chemicals do we want to include?

Questions: Governing Equations Curve fitting from AZ 6632 datasheet, where y = film thickness (  m) and x = spin speed (rpm) y = 5.712e -1E-04x for 2000  x  6000 Is it correct to use exponential fit? Can we extrapolate outside the range of x given in the datasheet? How do we model effect of time and acceleration? Is Laurell’s spin-speed calculator reliable? “This calculator is based on the principle that the thickness of a coating generally varies inversely with the square root of a corresponding spin speed.”

General Question If we spin coat a wafer with an uneven surface (such as one that’s already been etched), do we get a layer of uniform thickness, or of uniform height, or neither?