An Inductively Coupled Plasma Etcher Corial 200IL An Inductively Coupled Plasma Etcher For Compound Semiconductors

Corial 200IL

Equipment Control & Software COSMA Software with: Edit menu for process recipe edition, Adjust menu for process optimizing, Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network). CORS Software for: Data reprocessing (Measures and data comparison).

A Tool Organized in Successive Levels Actions Constructor Lots Process Closed-loop Server for GUI COSMA Supervisor Embedded control PU Embedded control function COSMA Controller Process Controller Device Controllers Physical devices Operator Remote GUI PC User Monitoring

Diagram Modes Stand-by Mode Production Optimization Constructor Errors Stand-by Mode Step by step Production Optimization Constructor Shut down Operator Production Normal Maintenance Constructor

A Communicant Tool Firewall WAN VPN ADSL Fix IP Dedicated Ethernet network COSMA Supervisor COSMA GUI Customer Ethernet Network Process Control Unit (1) Process Control Unit (2) Device Control (1) Ethernet Device Control (2)

System ICP Matching network ICP Reactor Load-lock Electronic Control RF Generator ICP Generator Electronic Control TMP Control ICP Reactor HT/BT Power Supplies

System Load-lock ICP Matching network ICP Reactor Matching Network TMP Throttle Valve Matching Network Lift ICP Reactor ICP Matching network Gas box Load-lock

Gate valve for quick reactor venting and cleaning Pumping System Reactor Load-lock Load-Lock Valve Gate valve for quick reactor venting and cleaning TV TMP Dry Pump ADP 122

Reactor Features (1) New Inductively Coupled Plasma source with hot walls to reduce polymer condensation and to enhance plasma cleaning. It produces High Density Plasma in a wide working pressure range (5 to 100 mT) for fast etching of up to Ø200 mm wafers, Helium assisted heat exchange between cathode, shuttle and wafer with mechanical clamping to maintain wafer temperature below 100°C, Numerous plasma modes accessible in the same process: Inductively Coupled Plasma + RF biasing Reactive Ion Etching Inductively Coupled Plasma for low damage etching.

Reactor Features (2) Reactor with hot walls enables: Highly selective processes, Low contamination of the process chamber. Low plasma potential (< 25 Volts) and automatic self bias regulation giving rise to precise control of ion energy enables (≤ 40 eV): Low damage etching with no RF biasing, Isotropic etching with low RF biasing, Anisotropic etching with high RF biasing.

Electron density : 1011 to 1012 e/cm3 ICP Source Electron density : 1011 to 1012 e/cm3 PLASMA Match Box RF generator at 2 MHz

ICP Reactor Design 2 MHz Match Box Reactor Laser window

ICP Reactor Design Match Box Ø280 mm coil Laser window Gas shower (Thermally isolated) Quartz tube

ICP Reactor Design Shielding Quartz tube Water cooled coil (Thermally isolated) Quartz tube (Thermally isolated) Water cooled coil The reactor walls are thermally isolated. They are getting hot during plasma etching. This strongly reduces the polymer condensation and the cross contamination between different processes.

Loading Loading tool Shuttle Cathode

Loading Loading tool Shuttle Cathode

Clamping Shuttle Cathode Loading tool

Cooling Shuttle Cathode Loading tool Helium

Etching PLASMA Shuttle Cathode Loading tool Helium

End of Etching Shuttle Cathode Loading tool

Unloading Loading tool Shuttle Cathode

Unloading Loading tool Shuttle Cathode

Pression He en fonction du débit - He Pressure Versus He Flow Rate - Example of Shuttle Altymid Ring Wafer O’ Ring Base Plate Graphite Plate Pression He en fonction du débit - He Pressure Versus He Flow Rate - 5 10 15 20 25 Débit He - He Flow Rate - (sccm) Pression He (Torrs) - He Pressure - He Pressure vs He Flow Rate Work Area Goal: Ensure wafer cooling The shuttles are designed according to wafer size, number of wafers and process recipes for optimum process results. The use of dedicated shuttles according to process strongly reduces the cross contamination.

Precise Monitoring The latest submicron technology needs precise monitoring: Automatic endpoint detection, CCD camera with magnification > 120 X, Laser beam diameter ≤ 20 m. A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

Laser Endpoint Detection Time Signal Interferences Photodiode Laser beam Reflected beam 1 Reflected beam 2 Interface 1 Underlayer Interface 2 Refractive Index = n Interferences lead to a periodic signal having a l/2n period versus time

Recap of Corial 200IL Features New Inductively Coupled Plasma source with hot walls which reduces polymer condensation, enhances plasma cleaning, minimizes cross contamination. It produces High Density Plasma for uniform etching of films on batch of seven 2” wafers or wafer size up to 200 mm, Low plasma potential (<25 Volts) and automatic self bias regulation to precisely control the ion energy, Helium assisted heat exchange to maintain resist and device integrity, Various shuttles to reduce cross contamination. They are designed to fit with wafers and processes recipes for the best process results, Wide process range from isotropic to anisotropic and fast etch rate to low etch rate with very high selectivity, Laser endpoint for precise process monitoring, Capability of many etching modes from RIE, ICP + RIE and ICP in the same process recipe.