CMOS and Microfluidic Hybrid System on Chip for Molecule Detection Bowei Zhang, Qiuchen Yuan, Zhenyu Li, Mona E. Zaghloul, IEEE Fellow Dept. of Electrical.

Slides:



Advertisements
Similar presentations
MSD1 Senior Design Project- Oxygen Gas Sensor
Advertisements

Chapter 9. PN-junction diodes: Applications
Analog VLSI Design Nguyen Cao Qui.
R. Hui Photonics for bio-imaging and bio- sensing Rongqing Hui Dept. Electrical Engineering & Computer Science, The University of Kansas, Lawrence Kansas.
Optoelectronic Devices (brief introduction)
Integrated Circuit Devices
GaAs radiation imaging detectors with an active layer thickness up to 1 mm. D.L.Budnitsky, O.B.Koretskaya, V.A. Novikov, L.S.Okaevich A.I.Potapov, O.P.Tolbanov,
Photodetector.
Chris Maloney May 10, 2011 Characterization of a Geiger-mode Avalanche Photodiode.
Fiber-Optic Communications
VLSI Digital System Design
The UC Simulation of Picosecond Detectors Pico-Sec Timing Hardware Workshop November 18, 2005 Timothy Credo.
© Fraunhofer IMS Version 6.1. Image Sensor Design and Technology Development at Fraunhofer IMS Dr. Sascha Weyers.
Liquid Helium Scintillation T. Wijnands EN/HDO Candidate for detecting beam losses in the LHC ?
Microwave Engineering/Active Microwave Devices 9-13 September Semiconductor Microwave Devices Major Applications Substrate Material Frequency Limitation.
There are 7 II-VI semiconductor materials
Purity measurement at SOLEIL Nicolas HUBERT # on behalf of the diagnostics group: N. Hubert, L. Cassinari, F. Dohou, M. El Ajjouri, M. Labat, D. Pédeau,
1 CCTV SYSTEMS CCD VERSUS CMOS COMPARISON CCD (charge coupled device) and CMOS (complementary metal oxide semiconductor) image sensors are two different.
CUÑADO, Jeaneth T. GEQUINTO, Leah Jane P. MANGARING, Meleria S.
Chapter 6 Photodetectors.
V. Semiconductor Photodetectors (PD)
Silicon Detectors and DAQ principles for a physics experiment.
Photon detection Visible or near-visible wavelengths
Chapter 5 Optical Detector.
Characterization of Silicon Photomultipliers for beam loss monitors Lee Liverpool University weekly meeting.
G.K.BHARAD INSTITUTE OF ENGINEERING DIVISION :D (C.E.) Roll Number :67 SUBJECT :PHYSICS SUBJECT CODE : Presentation By: Kartavya Parmar.
Fast Detectors for Medical and Particle Physics Applications Wilfried Vogel Hamamatsu Photonics France March 8, 2007.
Single-photon imaging in complementary metal oxide semiconductor processes by E. Charbon Philosophical Transactions A Volume 372(2012): March 28,
“PCB” -AMIT NIKAM -ASHI NAGARIYA.
Salvatore Tudisco The new generation of SPAD Single Photon Avalanche Diodes arrays I Workshop on Photon Detection - Perugia 2007 LNS LNS.
Interconnect Focus Center e¯e¯ e¯e¯ e¯e¯ e¯e¯ IWSM 2001Sam, Chandrakasan, and Boning – MIT Variation Issues in On-Chip Optical Clock Distribution S. L.
Introduction Trapped Plasma Avalanche Triggered Transit mode Prager
Creating a System to Test Single Photon Avalanche Diodes Introduction Single Photon Avalanche Diodes (SPADs) are optical sensing amplifiers which make.
Performance limits of a 55  m pixel CdTe detector G.Pellegrini, M. Lozano, R. Martinez, M. Ullan Centro Nacional de Microelectronica, Barcelona, 08193,
Active Pixel Sensors in Nuclear Medicine Imaging RJ Ott, N Evans, P Evans, J Osmond, A Clark, R Turchetta Physics Department Institute of Cancer Research.
1 Microwave Semiconductor Devices Major Applications Substrate Material Frequency Limitation Device Transmitters AmplifiersSi, GaAs, InP< 300 GHzIMPATT.
Silicon Detectors and DAQ principles for a physics experiment Masterclass 2011, 7-11 February 2011 Alessandro Scordo.
DØ Central Tracker Replaced with New Scintillating Fiber Tracker and Silicon Vertex Detector The DØ Central Detector Upgrade The DØ Detector is a 5000.
Complementary MOS inverter “CMOS” inverter n channel enhancement mode (V TN > 0) in series with a p channel enhancement mode (V TP < 0) 0 < V in < V.
9 th “Trento” Workshop on Advanced Silicon Radiation Detectors Genova, February 26-28, 2014 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica.
Schottky Barrier Diode One semiconductor region of the pn junction diode can be replaced by a non-ohmic rectifying metal contact.A Schottky.
Solid State Detectors - Physics
-1-CERN (11/24/2010)P. Valerio Noise performances of MAPS and Hybrid Detector technology Pierpaolo Valerio.
Lecture 14 OUTLINE pn Junction Diodes (cont’d)
SiPM from ST-Microelectronics Nepomuk Otte & Hector Romo Santa Cruz Institute for Particle Physics University of California, Santa Cruz
P. Fernández-Martínez – Optimized LGAD PeripheryRESMDD14, Firenze 8-10 October Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de.
CERN PH MIC group P. Jarron 07 November 06 GIGATRACKER Meeting Gigatracker Front end based on ultra fast NINO circuit P. Jarron, G. Anelli, F. Anghinolfi,
The VSiPMT: A new Generation of Photons Detectors G. Barbarino 1,2, F. C. T. Barbato 1,2, R. de Asmundis 2, G. De Rosa 1,2, F. Di Capua 1, P. Migliozzi.
M. Atef, Hong Chen, and H. Zimmermann Vienna University of Technology
Study of Geiger Avalanche Photo Diode applications to pixel tracking detectors Barcelona Main Goal The use of std CMOS tech. APD's in Geiger mode (that.
Silicon Photomultiplier Development at GRAPES-3 K.C.Ravindran T.I.F.R, OOTY WAPP 2010 Worshop On behalf of GRAPES-3 Collaboration.
CUÑADO, Jeaneth T. GEQUINTO, Leah Jane P. MANGARING, Meleria S.
High Gain Transimpedance Amplifier with Current Mirror Load By: Mohamed Atef Electrical Engineering Department Assiut University Assiut, Egypt.
25 um pitch 100 um pitch 50 um pitch 25 um pitch Individual SPADs 1 mm APD Nominal “standard” Devices: 25 um pitch ~50% fill factor AR coated > 20% DE?
Physics of Semiconductor Devices
Transient Waveform Recording Utilizing TARGET7 ASIC
Electronics & Communication Engineering
Matteo VIGNETTI *a (WP2 ESR PhD Student)
PN-junction diodes: Applications
Characterization and modelling of signal dynamics in 3D-DDTC detectors
Photodetectors.
PIN DIODE.
Diode Theory Chap - 3 Release 1-Sep-2010 Jetking Infotrain Ltd.
Optoelectronic Devices
Radiation Detectors : Detection actually means measurement of the radiation with its energy content and other related properties. The detection system.
Σ-D Analog to Digital Converter for CMOS Image Sensors Nonu Singh (RIT, MicroE Co-Op) Background After fabricating an imaging sensor it needs to be characterized.
Readout Electronics for Pixel Sensors
Readout Electronics for Pixel Sensors
Solid State Electronics ECE-1109
Readout Electronics for Pixel Sensors
Presentation transcript:

CMOS and Microfluidic Hybrid System on Chip for Molecule Detection Bowei Zhang, Qiuchen Yuan, Zhenyu Li, Mona E. Zaghloul, IEEE Fellow Dept. of Electrical & Computer Engineering, The George Washington University Background and Motivation Fabrication of SPAD in CMOS SPAD Design & Modeling Measured I-V character of one of the fabricated SPAD with proper guard ring gap length(1.8um) Measured I-V character of one of the fabricated SPAD with wrong Gap length Quenching Circuit for SPAD “Delay control signal” controls the rising delay of a slow rise inverter, which could adjust the output pulse width CMOS & Microfluidic Integration Coated micro-beads that can catch target molecule and generate fluorescence signal. Microbead fluorescence signal in preliminary experiment. A microfluidic channel trap is designed to catch a 10um diameter micro-bead with fluorescence signal. Our further work is to integrate this trap right on top of the SPAD FPGA Counting System The top view of our design is as shown in Fig.1 (a). A center n-well and a surrounding n-well were designed with certain gap between each other. The guard ring gap can protect SPAD from perimeter breakdown. A p+ doping is designed to cover the center n-well to form a p+n- juction, which is the area to detect photons. Fig.1(a) SPAD design top view Fig.1(b) Device doping profile model based on CMOS 0.5 μm Technology. Fig.1(c) Device electric field profile. High electric field area easier to breakdown. Fig.2(a) Simulated current density with proper n-wells gap(1.8um) Fig.2(b) Simulated current density, when n-wells gap too small, breakdown happened at perimeter FGPA counting system is design to count the total number of signal pulse from the quenching circuit, which indicates the total photon number in certain accumulation time. In addition, Time-to-Digital Converter (TDC) is designed on FGPA to record the photon arrive time. Which can be used to generated the fluorescence lifetime after signal processing. After simulation, SPAD, Quenching circuit and I/O Pads are designed in CMOS technology. The layout of the chip design was sent to semiconductor manufacturing company for fabrication. Layout of our SPADs design Fabricated chip of SPAD design CMOS Foundry Silicon Wafer Fig.3(a) Simulated I-V character of SPAD Fig.3(b) Simulated quantum efficiency 500μm 25μm 9 SPAD Designs with different Guard Ring Gap length When a photon arrives, SPAD breakdown, a quenching circuit is required to pull down the reverse voltage after an avalanche event, and after the recombination of the electron in the junction, the quenching circuit will apply a high reverse voltage on the SPAD again to ready for detecting another photon. Layout design of Dynamic Quenching CircuitFabricated CMOS Dynamic Quenching Circuit Output from Dynamic Quenching Circuit Each pulse indicate one photon event Each pulse has around 45ns pulse width Altera Cyclone II FGPA board used for design counting system. The figure on the right shows the basic function of Time correlated Single Photon Counting (TCSPC), which embedded in FPGA 10μm Design diagram of hybrid CMOS & Microfuidic System. Microfluidic channels are used for electrical interconnection and sample delivery Traditional fluorescence image system is complex and relative big. To build a portable system, we want to integrated the CMOS & Microfluidic technology. The hybrid CMOS & Microfluidic system is much smaller compare with traditional optics setup. It also have the potential to reach the similar sensitivity as the traditional setup. we use the material call polydimethylsiloxane (PDMS) to make the Microfluidic channels. PDMS is a soft polymer widely used in microfluidic and micro-optics due to its low cost, easy fabrication process, bio-compatibility and optical transparency. 80um microfluidic channel delivering low melting point solder Preliminary CMOS & Microfluidic Hybrid System Two samples with different fluorescence lifetime Wavelength lifetime image system doesn’t need filter. Each pixel use lifetime to distinguish signals. Sensitivity can be improved about 3 times. Lost EnergyTime Delay Fluorescence excitation process Lifetime Scientific and Medical Fluorescence Image System needs to detect very weak photon signal Lifetime Traditional image system use 3 filters at each pixel to identify different wavelength, which waste 2/3 of the photon signal. For fluorescence image system, signal photon avalanche diode(SPAD) can be used as the photon detector. It not only can detect the photon numbers, but also can detect the fluorescence lifetime. We used the CMOS 0.5μm technology to design and fabricated the SPAD. 20μm 200μm 100μm The key innovations of this method are: 1. using microfluidic channel to delivery low melting point solder for CMOS die and PCB board bonding. 2. PDMS Microfluidic channela put test sample directly contact with CMOS sensor chip to achieve high signal collection efficiency, thus improve the sensitivity. SPAD Breakdown Simulation For p+/n- junction photodiode, when the p+ doping density fixed, the lower the n- doping density, the higher the breakdown voltage. When the doping density at the perimeter area of the photodiode is low enough, the junction would breakdown at the center area first. Therefore, by control the gap between two n-wells, a low doping n- guard ring can be created to prevent the perimeter breakdown. Fig. 2&3 show the simulation results. Contact Information Bowe Zhang,