Section 4: Diffusion part 2

Slides:

Advertisements

Similar presentations

Chapter 7 Dopant Diffusion

Advertisements

1 Chapter 5-1. PN-junction electrostatics You will also learn about: Poisson’s Equation Built-In Potential Depletion Approximation Step-Junction Solution.

Chapter 6-1. PN-junction diode: I-V characteristics

ECE/ChE 4752: Microelectronics Processing Laboratory

Chapter 7 Dopant Diffusion

Fick’s Laws Combining the continuity equation with the first law, we obtain Fick’s second law:

Implantation and post-annealing characteristics when impinging small B n clusters into silicon at low fluence J.H. Liang, H.M. Han Department of Engineering.

Formation of pn junction in deep silicon pores September 2002 By Xavier Badel, Jan Linnros, Martin Janson, John Österman Department of Microelectronics.

Wally Dream Job.

Integrated Circuit Devices

Semiconductor pn junctions. semiconductor pn junction context Figure pn junction representations.

EE143 – Ali Javey Section 8: Metallization Jaeger Chapter 7.

Lecture #6 OUTLINE Carrier scattering mechanisms Drift current

Measuring ultra-shallow junction Jialin Zhao. Resistivity and Sheet resistance IRS roadmap 2003: 10 nm junction with sheet resistance 500 Ω/sq Electrical.

EE105 Fall 2007Lecture 3, Slide 1Prof. Liu, UC Berkeley Lecture 3 ANNOUNCEMENTS HW2 is posted, due Tu 9/11 TAs will hold their office hours in 197 Cory.

Microelectronics Processing

Lecture Number 4: Charge Transport and Charge Carrier Statistics Chem 140a: Photoelectrochemistry of Semiconductors.

For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN © 2002.

Section 12: Intro to Devices

Chapter 1 RESISTIVITY.

Chapter 2 Motion and Recombination

Microelectronics Processing

MSE-630 Dopant Diffusion Topics: Doping methods Resistivity and Resistivity/square Dopant Diffusion Calculations -Gaussian solutions -Error function solutions.

EE105 Fall 2011Lecture 3, Slide 1Prof. Salahuddin, UC Berkeley Lecture 3 OUTLINE Semiconductor Basics (cont’d) – Carrier drift and diffusion PN Junction.

Lecture #18 OUTLINE pn junctions (cont’d)

Lecture #7 OUTLINE Carrier diffusion Diffusion current Einstein relationship Generation and recombination Read: Sections 3.2, 3.3.

MiniSIMS Secondary Ion Mass Spectrometer Dr Clive Jones Millbrook Instruments Limited Blackburn Technology Centre, England

ECE/ChE 4752: Microelectronics Processing Laboratory

EE143 – Ali Javey Section 5: Thin Film Deposition Part 2: Chemical Methods Jaeger Chapter 6.

EE415 VLSI Design The Devices: Diode [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

The Devices: Diode.

Section 6: Ion Implantation

1 Dopant and Self-Diffusion in Semiconductors: A Tutorial Eugene Haller and Hughes Silvestri MS&E, UCB and LBNL FLCC Tutorial 1/26/04 FLCC.

Drift and Diffusion Current

CV Measurements Diode junction capacitance C j =  A/w Depletion depth np+p+ w VaVa reverse bias:  =  r  o (static dielectric constant). For Si,  r.

Techniques for determination of deep level trap parameters in irradiated silicon detectors AUTHOR: Irena Dolenc ADVISOR: prof. dr. Vladimir Cindro.

Chapter 7: DOPANT DIFFUSION

Thin Films and Diffusion. Diffusion is not constant across cross section, and continues with every subsequent high-temperature step; hence, we use.

LW4 Lecture Week 4-1 Heterojunctions Fabrication and characterization of p-n junctions 1.

Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d)

Chapter Intrinsic: -- case for pure Si -- # electrons = # holes (n = p) Extrinsic: -- electrical behavior is determined by presence of impurities.

Post Anneal Solid State Regrowth

Elemental silicon is melted and grown into a single crystal ingot Single crystal ingot being grown Completed silicon ingot.

FLCC Dopant and Self-Diffusion in Silicon and Silicon Germanium Eugene Haller, Hughes Silvestri, and Chris Liao MS&E, UCB and LBNL FLCC Tutorial 4/18/05.

Dopant Diffusion Scaling down MOSFET by 1/K calls for smaller junction depths. high deposit activation (n  N d )  Resistance  in S/D. N d (x j ) = N.

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #3. Diffusion  Introduction  Diffusion Process  Diffusion Mechanisms  Why Diffusion?  Diffusion Technology.

Doping and Crystal Growth Techniques. Types of Impurities Substitutional Impurities Substitutional Impurities –Donors and acceptors –Isoelectronic Defects.

SUPREM Simulation ECE/ChE 4752: Microelectronics Processing Laboratory Gary S. May March 18, 2004.

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #4. Ion Implantation  Introduction  Ion Implantation Process  Advantages Compared to Diffusion  Disadvantages.

Thermal doping review example This presentation is partially animated. Only use the control panel at the bottom of screen to review what you have seen.

1 Detectors RIT Course Number Lecture N: Lecture Title.

IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot.

Junction Formation The position of the junction for a limited source diffused impurity in a constant background is given by The position of the junction.

Midterm Exam Question (Thermal doping review) This presentation is partially animated. Only use the control panel at the bottom of screen to review what.

EE105 - Spring 2007 Microelectronic Devices and Circuits

Doping: Depositing impurities into Si in a controlled manner

Layer characterization

REFERENCE [1] : Jin-Woo Han, Beomseok Kim, Nobuhiko P. Kobayashi, Jing Li, and M. Meyyappan, a simple method for the determination of doping type in nanomaterials.

Integrated Circuit Devices

Research Paper. Chapter 7: DOPANT DIFFUSION DOPANT DIFFUSION Introduction Introduction Basic Concepts Basic Concepts –Dopant solid solubility –Macroscopic.

© 2004 Dieter Ast, Edwin Kan This material has been edited for class presentation. Ion Implantation: The most controlled way to introduce dopants into.

Boron and Phosphorus Implantation Induced Electrically Active Defects in p-type Silicon Jayantha Senawiratne 1,a, Jeffery S. Cites 1, James G. Couillard.

Doping. 고려대학교 Center for MNB Sensor Technology 166.

Ion Implantation CEC, Inha University Chi-Ok Hwang.

Solid State Devices EE 3311 SMU

Example Design a B diffusion for a CMOS tub such that s=900/sq, xj=3m, and CB=11015/cc First, we calculate the average conductivity We cannot calculate.

Section 7: Diffusion Jaeger Chapter 4 EE143 – Ali Javey.

Fermi Level Dependent Diffusion in Silicon

Chapter 7: DOPANT DIFFUSION

Lecture #18 OUTLINE pn junctions (cont’d)

Presentation transcript:

Section 4: Diffusion part 2 Jaeger Chapter 4 EE143 – Ali Javey

Example : High Concentration Arsenic diffusion profile becomes “box-like” EE143 – Ali Javey

Summary of High-Concentration Diffusion If doping conc < ni: Use constant diffusivity solutions (profile is erfc or half-gaussian) If doping conc > ni: Solution requires numerical techniques EE143 – Ali Javey

Transient Enhanced Diffusion (TED) Dopant Implantation C(x) no annealing 900oC, several minutes (After excess point defects recombine. slower diffusion) Si substrate Implantation induced excess point defects Implantation creates large number of excess Si interstitials and vacancies. (1000X than thermal process). After several seconds of annealing, the excess point defects recombine. x 900oC, several sec (TED) Extremely rapid diffusion due to excess point defects EE143 – Ali Javey

Diffusion: p-n Junction Formation EE143 – Ali Javey

Sheet Resistance EE143 – Ali Javey

Resistivity vs. Doping EE143 – Ali Javey

Irvin’s Curves p-type erfc n-type erfc p-type half-gaussian n-type half-gaussian Explicit relationship between: N (surface concentration) , o x (junction depth), j N (background concentration), B R (sheet resistance), S EE143 – Ali Javey

Motivation to generate the Irvin’s Curves Allows us to calculate doping parameters if we know 3 out of 4 of the parameters on the previous page Approach 1) The dopant profile can be uniquely determined if one knows the concentration values at two depth positions. 2) We will use the concentration values No at x=0 and NB at x=xj to determine the profile C(x). (i.e., we can determine the Dt value) 3) Once the profile C(x) is known, the sheet resistance RS can be integrated numerically from: 4) Irvin’s Curves are plots of No versus ( Rs xj ) for various NB. EE143 – Ali Javey

Resistivity Measurement: Four-Point Probe EE143 – Ali Javey

Impurity Profiling: Spreading Resistance Region of Interest is Angle-Lapped Two-Point Probe Resistance Measurements vs. Depth Profile Extracted EE143 – Ali Javey

Impurity Profiling Secondary Ion Mass Spectroscopy (SIMS) EE143 – Ali Javey