Bipolar Junction Transistors (BJT) NPNPNP. BJT Cross-Sections NPN PNP Emitter Collector.

Slides:



Advertisements
Similar presentations
CH14 BIPOLAR DIGITAL CIRCUITS The Ideal BJT Transistor Switch
Advertisements

Electronic Devices Eighth Edition Floyd Chapter 4.
Transistors and transistor circuits
Bipolar Junction Transistor Circuit Analysis
Transistors Fundamentals Common-Emitter Amplifier What transistors do
Recall Last Lecture DC Analysis and Load Line
Ch 11 Bipolar Transistors and Digital Circuits
Bipolar Junction Transistors ECE Three Terminal Device Terminals ▫Emitter  The dominant carriers are emitted from the region (equivalent to the.
BIJUNCTION TRANSISTOR
ECE 442 Power Electronics1 Bipolar Junction Transistors (BJT) NPNPNP.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Fourth Edition, by Allan R. Hambley, ©2008 Pearson Education, Inc. Lecture 27 Bipolar Junction Transistors.
Chapter 4 Bipolar Junction Transistor
Input & Output Characteristics COMMON BASE (CB) Engr.Usman Ali Khan.
Bipolar Junction Transistors EE314. Chapter 13: Bipolar Junction Transistors 1.History of BJT 2.First BJT 3.Basic symbols and features 4.A little bit.
ECES 352 Winter 2007Ch 11 Bipolar Digital Pt. 21 Simplified Transistor - Transistor Logic (TTL) *Transistor - Transistor Logic (TTL) *Simplified form of.
Chapter 4 – Bipolar Junction Transistors (BJTs)
Bipolar Junction Transistors (BJTs) 1.
Chapter 3: Bipolar Junction Transistors
Department of EECS University of California, Berkeley EECS 105 Fall 2003, Lecture 14 Lecture 14: Bipolar Junction Transistors Prof. Niknejad.
Principles & Applications
Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 21.1 Bipolar Transistors  Introduction  An Overview of Bipolar Transistors.
Dr. Nasim Zafar Electronics 1 EEE 231 – BS Electrical Engineering Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled.
ECE 342 – Jose Schutt-Aine 1 ECE 342 Solid-State Devices & Circuits 6. Bipolar Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University.
BJT structure note: this is a current of electrons (npn case) and so the conventional current flows from collector to emitter. heavily doped ~ 10^15 provides.
BJT in Saturation Mode Section 4.5. Outline Modes of Operations Review of BJT in the active Region BJT in Saturation Mode.
© 2000 Prentice Hall Inc. Figure 4.1 The npn BJT..
Bipolar Junction Transistors (BJT) 8/25/2015www.noteshit.com1.
09/16/2010© 2010 NTUST Today Course overview and information.
Chapter 17 Electronics Fundamentals Circuits, Devices and Applications - Floyd © Copyright 2007 Prentice-Hall Chapter 17.
Electronic Devices and Circuit Theory
Module 2 Bipolar Junction Transistor. Learning Outcomes 1.The 3 terminals or regions of a BJT. 2.Construction and symbol of NPN and PNP types 3.Low power.
ELECTRICA L ENGINEERING Principles and Applications SECOND EDITION ALLAN R. HAMBLEY ©2002 Prentice-Hall, Inc. Chapter 13 Bipolar Junction Transistors Chapter.
Chapter 6. Bipolar Junction Transistors (BJTs). Bipolar Junction Transistor Three terminal device Voltage between two terminals to control current flow.
المملكة العربية السعودية وزارة التعليم العالي - جامعة أم القرى كلية الهندسة و العمارة الإسلامية قسم الهندسة الكهربائية ELECTRONIC DEVICES K INGDOM.
1 Bipolar Junction Transistors (BJTs). Copyright  2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Introduction.
Bipolar Junction Transistors (BJTs) The bipolar junction transistor is a semiconductor device constructed with three doped regions. These regions essentially.
Recall Lecture 8 Clipper – Step 1: Find the clip value by doing KVL at the output branch – Step 2: Set the conditions to know whether diode is on or off.
TRANSISTOR.  A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power.  The transistor is the fundamental.
BJTs. Transistor The transistor is the main building block “element” of electronics. A transistor is a semiconductor device used to amplify and switch.
Chapter 5 Bipolar Junction Transistors
Chapter 3: Bipolar Junction Transistors. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey All rights reserved. Electronic.
Introduction to BJT Amplifier BJT (Review). Still remember about BJT? The emitter current (i E ) is the sum of the collector current (i C ) and the base.
Bipolar Transistors Two PN junctions joined together Two types available – NPN and PNP The regions (from top to bottom) are called the collector (C), the.
ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc. Chapter 13 Bipolar Junction Transistors.
Recall Last Lecture Introduction to BJT 3 modes of operation Cut-off Active Saturation Active mode operation of NPN.
Chapter 4 Bipolar Junction Transistors
Chapter3:Bipolar Junction Transistors (BJTs)
TRANSISTOR - Introduction BIPOLAR JUNCTION TRANSISTOR (BJT)
Electronics Principles & Applications Fifth Edition Chapter 8 Large-Signal Amplifiers ©1999 Glencoe/McGraw-Hill Charles A. Schuler.
Chapter 3 Bipolar Junction Transistor (BJT)
LARGE-SIGNAL BEHAVIOR OF BJTS Large-signal models in the forward-active region Effects of collector voltage in the forward-active region Ohmic and inverse.
1 Concepts of electrons and holes in semiconductors.
Chapter 4 Bipolar Junction Transistors
ECE 333 Linear Electronics
NAME: NIDHI PARMAR ENR.NO.: GUIDED BY: RICHA TRIPATHI.
COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 5.
COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 8.
PEN NO Ahir Darshan Harsora Ashish Mistry Ravi.
Regions of a Transistor A Bipolar Junction Transistor is a three terminal device containing 3 regions: Emitter, Base and Collector.
Introduction to BJT Amplifier Bipolar Junction Transistor (Review)
DC Biasing - BJTs Chapter 4 Boylestad Electronic Devices and Circuit Theory.
Chapter 4 Bipolar junction transistor Ir. Dr. Rosemizi Abd Rahim 1 Ref: Electronic Devices and Circuit Theory, 10/e, Robert L. Boylestad and Louis Nashelsky.
Bipolar Junction Transistors (BJT)
Bipolar Junction Transistors (BJT)
Electronics Fundamentals
TRANSISTOR - Introduction
Semiconductor Devices (Electronics)
Chapter 4 Bipolar Junction Transistor
Review & Problems.
Presentation transcript:

Bipolar Junction Transistors (BJT) NPNPNP

BJT Cross-Sections NPN PNP Emitter Collector

Common-Emitter NPN Transistor Forward bias the BEJ Reverse bias the CBJ

Input Characteristics Plot I B as f(V BE, V CE ) As V CE increases, more V BE required to turn the BE on so that I B >0. Looks like a pn junction volt-ampere characteristic.

Output Characteristics Plot I C as f(V CE, I B ) Cutoff region (off) –both BE and BC reverse biased Active region –BE Forward biased –BC Reverse biased Saturation region (on) –both BE and BC forward biased

Transfer Characteristics

Large-Signal Model of a BJT KCL >> I E = I C + I B β F = h FE = I C /I B I C = β F I B + I CEO I E = I B (1 + β F ) + I CEO I E = I B (1 + β F ) I E = I C (1 + 1/β F ) I E = I C (β F + 1)/β F

Transistor Operating Point

DC Load Line V CC V CC /R C

BJT Transistor Switch

BJT Transistor Switch (continued)

BJT in Saturation

Model with Current Gain

Miller Effect v be v ce i out

Miller Effect (continued)

Miller Capacitance, C Miller = C cb (1 – A) –since A is usually negative (phase inversion), the Miller capacitance can be much greater than the capacitance C cb This capacitance must charge up to the base-emitter forward bias voltage, causing a delay time before any collector current flows.

Saturating a BJT Normally apply more base current than needed to saturate the transistor This results in charges being stored in the base region To calculate the extra charge (saturating charge), determine the emitter current

The Saturating Charge The saturating charge, Q s storage time constant of the transistor

Transistor Switching Times

Switching Times – turn on Input voltage rises from 0 to V 1 Base current rises to I B1 Collector current begins to rise after the delay time, t d Collector current rises to steady-state value I CS This “rise time”, t r allows the Miller capacitance to charge to V 1 turn on time, t on = t d + t r

Switching Times – turn off Input voltage changes from V 1 to –V 2 Base current changes to –I B2 Base current remains at –I B2 until the Miller capacitance discharges to zero, storage time, t s Base current falls to zero as Miller capacitance charges to –V 2, fall time, t f turn off time, t off = t s + t f

Charge Storage in Saturated BJTs Charge storage in the Base Charge Profile during turn-off

Example 4.2

Waveforms for the Transistor Switch V CC = 250 V V BE(sat) = 3 V I B = 8 A V CS(sat) = 2 V I CS = 100 A t d = 0.5 µs t r = 1 µs t s = 5 µs t f = 3 µs f s = 10 kHz duty cycle k = 50 % I CEO = 3 mA

Power Loss due to I C for t on = t d + t r During the delay time, 0 ≤t ≤t d Instantaneous Power Loss Average Power Loss

During the rise time, 0 ≤t ≤t r

Average Power during rise time

Total Power Loss during turn-on

Power Loss during the Conduction Period

Power Loss during turn off Storage time

Power Loss during Fall time

Power Loss during Fall time (continued)

Power Loss during the off time

The total average power losses

Instantaneous Power for Example 4.2

BJT Switch with an Inductive Load

Load Lines