Semiconducting Nanowires as Nanoelectronic Building Blocks Evan Brown Professor Grace Lu Group September 2nd, 2005.

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Presentation transcript:

Semiconducting Nanowires as Nanoelectronic Building Blocks Evan Brown Professor Grace Lu Group September 2nd, 2005

The Goal To make Zn nanowires using electrodeposition. To convert those wires into ZnO wires via thermal oxidization. To characterize the wires.

The Goal Part 2 Nanowires vertically aligned in a highly ordered template. Future small scale transistors. Can be used as the building blocks for simple logic gates and memory elements.

The Process

Anodization

The Process

Electrodeposition Originally, DC biasing was used to deposit. This gave varying results.

Electrodeposition Part 2 With different parameters came different results, but still not ideal.

Electrodeposition Part 3

Electrodeposition Part 4 We then tried Pulsed Electrodeposition (PED) to improve the filling factor and uniformity of growth. An initial filling factor of ~75% was achieved.

Electrodeposition Part 5 Again, vs.

PED/DC Diffusion is the key. DC electrodeposition does not allow the electrolyte to diffuse evenly throughout all the pores. PED can be tailored to allow for the electrolyte's natural diffusion.

The Results Preliminary electrical transport measurements have been taken.

The Results Part 2 I-V Curve of a purely Zn nanowire.

The Results Part 3 Red-Ti Blue-Zn

The Results Part 4 Red-Ti Blue-Zn Green-ZnO

Acknowledgements Professor Jia “ Grace ” Lu, Joseph Fan, Dawei Wang, Marco Huang, CJ Chien. Said Shokair and the IM-SURE program. National Science Foundation