TCAD simulations for pixel detectors Summary: 1)Geometry layout: doping profiles for 3D geometry; 2) Results: electrostatic potential, electric field distribution;

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Presentation transcript:

TCAD simulations for pixel detectors Summary: 1)Geometry layout: doping profiles for 3D geometry; 2) Results: electrostatic potential, electric field distribution; 3) Interpixel capacitance and bulk capacitance with respect to the bias voltage; 4) Future plans; 1 Otilia Militaru, Eduardo Cortina Universite Catholique de Louvain, BELGIQUE

TCAD simulations for pixel detectors Simulator: TCAD from SYNOPSIS: DEVISE(geometry, doping, mesh in 3D geometry) DESSIS (simulator) TECPLOT_ISE (graphical interface, results visualization) 2

TCAD simulations for pixel detectors 1)Geometry layout: doping profiles - 3D geometry 3 Pixel size: square of 300 µm (implant 180 microns microns distance) Bulk: 100 µm width Oxide over silicon: 1 µm Doping: p+ implants on n-type bulk: Boron (Gaussian shape with the peak at 1e18 at/cm^3 at 0.3 µm under the surface) Bulk: Phosphorus 1e12 at/cm^3 Backplane: uniform Phosphorus implant with a same Gaussian shape

TCAD simulations for pixel detectors 1)Geometry layout: doping profiles - 3D geometry 4 Thank you for the information we received from FBK : junction depth 1 µm field plate 4 µm over the p+ implant oxide thickness 1 µm oxide charge 5e11 q/cm 2

TCAD simulations for pixel detectors 1)Geometry layout: doping profiles - 3D geometry 5 P++

TCAD simulations for pixel detectors Bonding placement 6

TCAD simulations for pixel detectors 7 Otilia Militaru, Eduardo Cortina Universite Catholique de Louvain, BELGIQUE

TCAD simulations for pixel detectors 8 Otilia Militaru, Eduardo Cortina Universite Catholique de Louvain, BELGIQUE

TCAD simulations for pixel detectors 9 Otilia Militaru, Eduardo Cortina Universite Catholique de Louvain, BELGIQUE Electrostatic potential at 100V bias voltage

TCAD simulations for pixel detectors 10 Otilia Militaru, Eduardo Cortina Universite Catholique de Louvain, BELGIQUE Electric field at 100V bias voltage

TCAD simulations for pixel detectors 11 Otilia Militaru, Eduardo Cortina Universite Catholique de Louvain, BELGIQUE eMobility at 100V bias voltage

TCAD simulations for pixel detectors 12 No interface charge added (producer recommended 5e11 q/cm 2 )

TCAD simulations for pixel detectors 13 Plans: add InAlAs bondings, layer of insulator with metallization