1. TCAD Simulation of Geometry Variation under HPK campaign
Ranjeet
Center for Detector & Related Software Technology (CDRST)
Department of Physics and Astrophysics,
University of Delhi (DU), Delhi, INDIA
On behalf of Si Sensor Simulation Group
Kirti Ranjan, D.U.

2. TCAD Simulation vs. Measurement
Active thickness: 300 mm

3. 5-strip Structure Simulations
5-STRIP Simulation
5-strip Structure Simulations
SILVACO
Simulated Structure (zoomed)
We have considered five strips in which Cint is evaluated by sending AC signal to central electrode and measuring it w.r.t. two adjacent strips (which are shorted).

4. Simulation Parameters – Same for all 12 configurations
1) Temp = 21 deg C corresponding to 294 K
2) n+ implant of 30 micron from the back side
3) Strip length for normalization = cm
4) Total device depth is 320 micron.
5) Frequency = 1MHz
SILVACO
Parameter
Old Set
New Set
1.Substrate Doping Conc. (NB)
3.0x1012 cm-3
2.0x1012 cm-3
Surface Charge Density  (QF)
1.0x1011 cm-2
Junction depth
1.5 mm
2.2 mm
Only Width and Pitch are changed in 12 configurations (according to MSSD design) keeping all other parameters same.

5. FZ320N (Comparison Cint)
SILVACO
In one of the configuration 7, one measurement is quite different. It may be that stray capacitances are not subtracted from the measurement.
There is a change in curvature but the saturation value is almost same with old & new set of parameters. 5

6. FZ320N (Comparison E. filed)
MSSD No-3
MSSD No-7
MSSD No-11
SILVACO
Pitch = 80
Old Set
New Set
Vbias = 400V
The E. Field is showing similar values & behaviour with new set of parameters.
Almost similar E.Field with old & new set of parameteres

7. FZ320N (E Field) Old Set MSSD No-1 MSSD No-2 MSSD No-5 MSSD No-6
SILVACO
MSSD No-1
MSSD No-2
MSSD No-5
MSSD No-6
MSSD No-9
MSSD No-10
Pitch = 240
Pitch = 120
Vbias = 400V
E Field decreases as the width of the strip implant increases

8. FZ320N (E Field) OLD SET MSSD No-3 MSSD No-4 MSSD No-7 MSSD No-8
SILVACO
MSSD No-3
MSSD No-4
MSSD No-7
MSSD No-8
MSSD No-11
MSSD No-12
Pitch = 70
Pitch = 80
Vbias = 400V
E Field decreases as the width of the strip implant increases

9. Simulation of Cint for Multi-SSD with Double P-stops
4µm wide separated by 6µm
Simulated Structure – zoomed region
Instead of two adjacent half- P+ neighbouring strips, we have considered five strips in which Cint is evaluated by sending AC signal to central electrode and measuring it w.r.t. two adjacent strips (which are shorted).

10. Simulation Parameters–Fz320P
1) Temp = 21 deg C corresponding to 294 K
2) n+ implant of 30 micron from the back side
3) Strip length for normalization = cm
4) Total device depth is 320 micron
5) For FZ320P, Double P-stop (each 4µm wide separated by 6µm)
5) Frequency = 1MHz
SILVACO
Parameter
Old Set
New Set
1.Substrate Doping Conc. (NB)
3.0x1012 cm-3
5.0x1012 cm-3
Surface Charge Density  (QF)
3.0x1010 cm-2
Junction depth
1.5 mm
2.2 mm
P-stop peak doping density
5x1016cm-3
4x1015cm-3
P-stop doping depth
1µm
1.6µm
Only Width and Pitch are changed in 12 configurations (according to MSSD design) keeping all other parameters same.

11. FZ320P (Comparison Cint)
SILVACO
In one of the configuration 7, one measurement is quite different. It may be that stray capacitances are not subtracted from the measurement.
There is a change in curvature but the saturation value around 400V is almost same with old & new set of parameters. 11

12. FZ320P (Comparison E. filed)
MSSD No-3
MSSD No-7
MSSD No-11
SILVACO
Pitch = 80
Old Set
New Set
Vbias = 400V
The E. Field is showing similar values & behaviour with new set of parameters.
The behaviour of E.field has changed but maximum value is almost same.

13. FZ320P (E Field) Old Set MSSD No-1 MSSD No-2 MSSD No-5 MSSD No-6
SILVACO
MSSD No-1
MSSD No-2
MSSD No-5
MSSD No-6
MSSD No-9
MSSD No-10
Pitch = 240
Pitch = 120
Vbias = 400V
E Field decreases as the width of the strip implant increases

14. FZ320N (E Field) OLD SET MSSD No-3 MSSD No-4 MSSD No-7 MSSD No-8
SILVACO
MSSD No-3
MSSD No-4
MSSD No-7
MSSD No-8
MSSD No-11
MSSD No-12
Pitch = 70
Pitch = 80
Vbias = 400V
E Field decreases as the width of the strip implant increases