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Simulation of the Electrostatic potential and the Electric Field in Pixel device By Joseph Manungu High Energy Physics Group meeting Dept of Physics Syracuse.

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Presentation on theme: "Simulation of the Electrostatic potential and the Electric Field in Pixel device By Joseph Manungu High Energy Physics Group meeting Dept of Physics Syracuse."— Presentation transcript:

1 Simulation of the Electrostatic potential and the Electric Field in Pixel device By Joseph Manungu High Energy Physics Group meeting Dept of Physics Syracuse University

2 Outlines 1. Static simulation of P-stop 2. Static simulation of P-spray 3. Extract the maximum magnitude of lateral electric for both types 4. Compare our results with the ones obtained by T. Rohe & al.

3 Pixel ? The pixel cells are the n+ implants which are placed on n-bulk material while the back side consists of a large diode surrounded by a multi guard ring structure.

4 Geometry p+ -implant n+ -implant

5 Electrostatic potential and the Electric Field lines

6 Magnification of the Electric Field lines from 0 to 50 microns in y- direction

7 Problems encountered with the P-spray Non reproducibility of the doping profile for the p+ implantation We are thinking of using error doping profile function or any other kind of the doping profile; Pearson doping profile didn’t help at all. We are open to suggestions and critiques.

8 Next presentation

9 Electrostatic potential

10 Electrostatic potential and the Electric Field lines

11 Magnification of the Electric Field lines in the y-direction

12 Cuts of the electrostatic potentials


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