HPK L1 teststructures HPK L1 half moon teststructure corresponding to main chips 6,7 Results on  Diode C-V  Coupling capacitors  polysilicon arrays.

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Presentation transcript:

HPK L1 teststructures HPK L1 half moon teststructure corresponding to main chips 6,7 Results on  Diode C-V  Coupling capacitors  polysilicon arrays  Strip capacitances  MOS R. Bernhard, F. Lehner U Zurich 4/3/03

HPK L1 teststructures depletion voltage of diode ~110V Corresponding sensor (HPK-L1 #6,7) depletion voltages:  150V (HPK)  130V (KSU), 110V (FNAL)  N.B. depletion voltage of segmented strip detector is ~5-10% higher than planar diode

HPK L1 teststructures coupling capacitor test structure same length than on sensor: 7.74 cm low frequency limit: 115 pF => 14.8 pF/cm (in specs)

HPK L1 teststructures CC breakdown ~ V similar to HPK-L2

HPK L1 teststructures Aluminum trace teststructure (meander-like) length 60 mm resistance: 35 Ohm/cm (spec: 30 Ohm/cm) HPK-L2: 16 Ohm/cm, smaller due to wider Al traces

HPK L1 teststructures p+ implant structure 130 kOhm/cm (on HPK-L2: 104 kOhm/cm)

HPK L1 teststructures numerous polyresistor structures different arrays: PS0, PS10, PS20, PS30 and PSH0 – PSH30 What is the difference?  polysilicon material?  Processing?  doping?

HPK L1 teststructures linearity from in range from –5V to +5V given for PS- 30 and PS-20 resistor array PS-10 and PS-0 have breakdown at ±2V in linear region all resistors measured to be 1.05 ± 0.01 Mohm

HPK L1 teststructures Baby detector w/ polysilicon resistors R_poly: 0.7 ± 10% Mohm R_poly + R_implant:  1.5 ± 10% Mohm  implant alone: 130kOhm/cm 1MOhm implant for 7.7 cm strip  not fully consistent !

HPK L1 teststructure exact resistance value is difficult to measure, currents are low value is irrelevant though, as long as R_inter >> R_poly R_inter on babydetector ~ 10 Gohm (?)

HPK L1 teststructures total strip capacitance  includes both neighbors  plus backplane capacitance capacitance reaches plateau at ~10V frequency dependence: Capacitance at 1 MHz: ~8.5pF Cap/cm: ~1.1 pF/cm

HPK L1 teststructures interstrip capacitance  to one neighbor: ~3 pF => 0.39 pF/cm  to both neighbors: ~5.5 pF => 0.71 pF/cm

MOS structure MOS (metal-oxide- silicon) structure  measure flatband voltage  use only 0.1V oscillator amplitude on LCR  high frequency (200kHz)  flatband shift to negative values?  interpretation not yet clear