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Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 1 Preliminary testing results of Elma and HPK sensors Sergey Korjenevski Kansas State University.

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Presentation on theme: "Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 1 Preliminary testing results of Elma and HPK sensors Sergey Korjenevski Kansas State University."— Presentation transcript:

1 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 1 Preliminary testing results of Elma and HPK sensors Sergey Korjenevski Kansas State University

2 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 2 Stock @ KSU – 10/10/02  ELMA prototypes: u L0 23 detectors s 3 irradiated s 7 first batch (February 2002) s 16 second batch (July 2002) u L1 0 detectors s 4 detectors were delivered July 2002, 2 were tested, sent to Fermilab for SVX4 tests and module construction s Expected more with MMM  HPK prototypes: u L1 10 detectors (September 2002) u 3 test structures

3 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 3  Leakage Current L0 ELMA

4 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 4 L0 ELMA  Depletion Voltage Most of the prototypes have depletion point at around 25V QA document does not require low limit on FDV For production run raw Si must be changed, FDV will be different

5 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 5 L0 ELMA  Strip Measurements u Data available for detailed statistical analysis u Polyresistors are lower than specification s 237-9d1 230K  s 1-3d1 550K 

6 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 6 L1 ELMA  Leakage Current u 2-7 432nA @350V u 2-9 364nA @350V Breakdown 630V  Depletion Voltage u 21V  Strip scan u Ileak ~0.2 nA per strip u Rpoly 580K  (2-7 only) u Cac ~100pF u No pinholes

7 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 7 L1 HPK  Leakage Current DØ requires I leak < 1700 nA at FDV RT for L1 All 10 detectors are acceptable HPK_L1_020 has breakdown at ~ 750V, the rest >800V (spec 700V)

8 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 8 L1 HPK  Depletion Voltage DØ requires V fd < 300 V All 10 detectors are acceptable KSU measurements ~10% lower than HPK. Could HPK define Vfd as Depletion + 10%?

9 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 9 L1 HPK  Strip Measurements u 5 sensors were tested – I leak; I diel; R poly; C ac u Rpoly depends on voltage through polyresistor; Some indication of Rpoly out of specification ~200K  too low. Will be investigated. HPK Rpoly estimation is made on Rpoly monitor, - was not supplied. u HPK01 0.04nA per strip; no PH; Cac Cp-Q mode 67pF; u HPK03 0.04nA per strip; bad strip 42; Cac 89pF; u HPK04 0.05nA per strip; bad strip 346; Cac ~60pF; u HPK06 0.05nA per strip; PH 13, 47, 267; u HPK07 0.05nA 27 leaking; PH 320; Cac ~65pF;

10 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 10 HPK L1 comments  Three Test Structures were sent along  No Rpoly monitor (HPK reports R value)  These 3 TS are being tested at the moment  These TS will be tested by other centers for calibration

11 Sergey Korjenevski KSU DØ Run2b Silicon meeting, Oct 10, 2002 11 Near Future Plans  Finish testing of HPK_L1 sensors  Polysilicon Resistor issue needs to be resolved  Switching matrix to install u Speed up the sensor testing u Simplify the procedure  Data Base IO format needs to be addressed  Cool chuck for irradiation studies


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