Fig. 1 Structural and electrical properties of Bi2Se3/BaFe12O19.

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Fig. 1 Structural and electrical properties of Bi2Se3/BaFe12O19. Structural and electrical properties of Bi2Se3/BaFe12O19. (A) XRD spectrum of a 5-nm-thick BaFe12O19 film. a.u., arbitrary unit. (B) RHEED image of the Bi2Se3 film in a Bi2Se3 (6 nm)/BaFe12O19 (5 nm) sample. (C) Optical image of a Bi2Se3/BaFe12O19 Hall bar structure. (D) RH of the Bi2Se3 film as a function of magnetic field at different temperatures (T), as indicated. (E) Sheet carrier density as a function of T was calculated using the RH data in (D). The inset in (E) shows the EF estimated from the carrier density data. (F) Conductivity of the Bi2Se3 film as a function of T. The inset in (F) shows the same data but in a natural logarithm scale. The data in (D) and (F) were measured using the Hall bar device shown in (C). Peng Li et al. Sci Adv 2019;5:eaaw3415 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).