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Fig. 1 Characterization of the device structure.

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1 Fig. 1 Characterization of the device structure.
Characterization of the device structure. (A) Schematic of a back-gated BP on an HfLaO substrate with top Ni/Au source and drain electrodes. (B) BP flake with a measured thickness of 12.5 nm by AFM. Inset of (B), AFM image of the few-layer BP devices. Scale bar, 2 μm. (C) Polarization-resolved Raman spectrum of the BP flake. The left image shows three spectra obtained from an individual flake in different orientations. The right image shows the orientation-dependent A2g/A1g peak intensities. (D) Representative false-colored SEM image of the BP transistors. AC and ZZ stand for the armchair and zigzag directions, respectively. Scale bar, 1 μm. a.u., arbitrary units. Xuefei Li et al. Sci Adv 2019;5:eaau3194 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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