Lecture 3: Semiconductor Epitaxy Technologies (II) and

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Presentation transcript:

Lecture 3: Semiconductor Epitaxy Technologies (II) and Insulator Growth Technologies (I)

-Horst Stroemer

Prof. Tim Sands Prof. Mike Capano

MO Procusors Bubblers

Control temperature >> Control MO Procusor Vapor Pressure >> Epi-layer Growth Rate

Dielectric Technologies: Chemical Vapor Deposition 1. APCVD SiO2 Si3N4

Dielectric Technologies: Chemical Vapor Deposition 2. LPCVD Low Pressure = 0.1-1 Torr Reduce gas phase nucleation

Dielectric Technologies: Chemical Vapor Deposition 3. PECVD PECVD Partially conformal CVD Conformal HDP (High Density Plasma) CVD Un-conformal

Si3N4 Process Temperature at 300 C to 400 C Two most important insulating films grown by PECVD Si3N4 Process Temperature at 300 C to 400 C mixtures of diluted Ar or He as carrier gas Si from SiH4 N from NH3 or N2 SiO2 Similar process Si from SiH4 (TEOS used for safety) O from O2 (No plasma needed) O from CO2 (C contamination) O from N2O preferred

Homework: The growth of GaAs on silicon wafers is able to provide large wafers for IC fabrication. If you wanted to extend this process to InP and InAs, what would you need to find out to determine whether or not it would be possible? Assume that you wanted to deposit Al2O3 on the wafer using CVD. What precursors might you use? What problems could you foresee? Due on Thursday 1/17/2019.