Lab Course Dry Etching Goal: Patterning of Si wafer utilizing resist mask and various dry etching systems Parallel plate reactor (group I & III) SF6 P.

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Presentation transcript:

Lab Course Dry Etching Goal: Patterning of Si wafer utilizing resist mask and various dry etching systems Parallel plate reactor (group I & III) SF6 P = ? mbar Prf = ? W rSi = ? nm/s (SEM inspection) rSi = ? nm/s (profiler + ellipsometer) S = rSi / rresist ≈ ? SEM picture of cross section indicating wm‘, dm‘, de , ue etch anisotropy: a = (de – ue) / de = ? pattern fidelity: f = ? Wagner / Meyners

Lab Course Dry Etching ICP - RIE (group II + IV) Passivation: gas?, Pcoil = ? W, Pbias = ? W Depassivation: gas?, Pcoil = ? W, Pbias = ? W Etching: gas?, Pcoil = ? W, PRFbias = ? W Evacuation ? SEM picture of cross section indicating wm‘, dm‘, de , ue etch anisotropy: a = (de – ue) / de = ? pattern fidelity: f = ? rSi = ? nm/s (SEM inspection) rSi = ? nm/s (profiler + ellipsometer) S = ? Wagner / Meyners Micro / Nanosystems Technology

Lab Course Dry Etching Comparison of RIE and ICP-RIE (will be done during lecture): etch rate, selectivity, anisotropy, pattern fidelity? Side note: optical measurements and profilometer measurements probably do not exactly fit results from SEM inspection due to lateral variation of sample properties across wafer (reduced gas exchange between lines and spaces, resist thickness variation) Wagner / Meyners Micro / Nanosystems Technology