Me-C:H by CAAD Me-C:H layer Transition layer Metal nitride/carbide Substrate PVD/CAAD single synthesis Adhesion high ionization Low cost investment Industrialized.

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Presentation transcript:

Me-C:H by CAAD Me-C:H layer Transition layer Metal nitride/carbide Substrate PVD/CAAD single synthesis Adhesion high ionization Low cost investment Industrialized production Plasma diagnostics Catalysis effect of metal doping Nitrogen doping effect

Schematic of deposition process SUBSTRATE Me +, e-, particles Emission of metal species Transport from source to substrate Film growth on substrate FILM Dissociation of reactive species Me + + e - + C x H y Me, C m H n, C i, H.. SOURCE EVAPORATOR

Chemical analysis of Cr-C:H -- RBS and ERD P(C 2 H 2 )=1.5Pa (H/C) at% ~ 1:2 Substrate C2HC2HH Cr

Cross Sectional TEM of Cr-C:H/N (N/C atomic ratio of 3.5%) Cr-C:H/N layer (d) Cr-C:H/N layer transition layer CrN layer