V2O and V3O DEFECTS IN SILICON: FTIR STUDIES

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V2O and V3O DEFECTS IN SILICON: FTIR STUDIES Leonid Murin 1,2 1 Joint Institute of Solid State and Semiconductor Physics, Minsk, Belarus 2 Oslo University, Centre for Materials Science and Nanotechnology, Oslo, Norway

OUTLINE What we know V2O and V3O formation upon irradiation at RT V2O and V3O formation upon annealing Comparison of electron and neutron irradiation LVMs of excited states

BACKGROUND - WHAT IS KNOWN V2O defect N.V.Sarlis, C.A. Londos, and L.G. Fytros (J. Appl. Phys. 81 (1997) 1645) have assigned the band at 839 cm-1 (RT position) to this defect (neutron irradiated Cz-Si) J.L. Lindström, L.I. Murin, V.P. Markevich, T. Hallberg, and B.G. Svensson (Physica B 273-274 (1999) 291) have assigned the band at 833.4 cm-1 (LT position, 826 cm-1 – RT position ) to V2O (electron irradiated Cz-Si) V3O defect Y.H Lee, J.C. Corelli and J.W. Corbett (Phys. Lett. 60A (1977) 55) assigned the band at 889 cm-1 (RT position) to this defect C.A. Londos, N.V.Sarlis, and L.G. Fytros (J. Appl. Phys. 81 (1999) 1645) have assigned a shoulder (at 884 cm-1 (RT position)) of the 889 cm-1 band (VO2) to V3O (neutron irradiated Cz-Si)

Formation of V2O and V3O 1. RT irradiation V + Oi  VO (1) V + VO  V2O (2) V + V2O  V3O (3) The V capture radii appear to be very similar for reactions (1) and (2). So, at electron irradiation doses when [VO] does not exceed 3-5% of [Oi], the V2O line (833.4 cm-1) is practically not detectable (it is masked by the Si isotope lines of VO, see Fig 1a). However, at higher doses, when [VO] increases up to 10-20% of [Oi], the appearance of V2O is clearly seen (Fig. 1b, the Si isotope lines are taken into account for all the defects, not shown). Along with the main V2O band (at 833.4 cm-1), a weaker band at 837 cm-1 is developing. Besides, two weak lines, at 842.4 and 848.6 cm-1, start to appear as well. These are suggested to arise from a V3O defect.

Formation of V2O and V3O 2. Annealing Migration of V2 that occurs at T > 150 C results in a further development of VnO centres (Fig. 2a,b) via the V2 interaction with Oi, VO and other defects V2 + Oi  V2O (4) V2 + VO  V3O (5) V2 + V2O  V4O (6)

In electron-irradiated Cz-Si the interstitial oxygen appears to be a dominant trap of mobile divacancies. In crystals with different doping levels and irradiated with different doses, the main part of V2 disappear during isochronal anneal in the same temperature region

In samples with a high V2 concentration, a noticeable decrease in [Oi] is observed (Fig. 4a), in accordance with reaction (4).

Due to occurrence of reaction (5) the concentration of A-centres is decreasing as well

However, reaction (5) can not account for the observed overall generation of V3O, especially in samples with relatively low VO concentration. It is very likely, that V3 has the same migration ability as V2, and V3O can be also generated via the reaction V3 + Oi  V3O (7)

Note It is interesting to note that the V2H and V3H defects detected in EPR and FTIR studies (P. Stallinga et al, PRB 58, 3842, (1998)) are also not distinguished in their annealing behaviour. According to the latter paper the ratio of V3 and V2 production rates is about 0.5 in proton implanted Si. In the case of 10 MeV electron irradiation, this ratio is about 0.2-0.3 (our estimations), but for neutron irradiation it increases again up to 0.5.