Silicon eyes for radio-labeled biological samples

Slides:



Advertisements
Similar presentations
Snowmass 2005 SOI detector R&D Massimo Caccia, Antonio Bulgheroni Univ. dell’Insubria / INFN Milano (Italy) M. Jastrzab, M. Koziel, W. Kucewicz, H. Niemiec.
Advertisements

Timepix2 power pulsing and future developments X. Llopart 17 th March 2011.
1 Conceptual design adopts state-of-the-art silicon sensor techniques (compare ATLAS/CMS/ALICE inner tracker layers, BaBar tracking of B mesons). Design.
Why silicon detectors? Main characteristics of silicon detectors: Small band gap (E g = 1.12 V)  good resolution in the deposited energy  3.6 eV of deposited.
High-resolution, fast and radiation-hard silicon tracking station CBM collaboration meeting March 2005 STS working group.
10/26/20151 Observational Astrophysics I Astronomical detectors Kitchin pp
Fully depleted MAPS: Pegasus and MIMOSA 33 Maciej Kachel, Wojciech Duliński PICSEL group, IPHC Strasbourg 1 For low energy X-ray applications.
MIT Lincoln Laboratory NU Status-1 JAB 11/20/2015 Advanced Photodiode Development 7 April, 2000 James A. Burns ll.mit.edu.
Development of CCDs for the SXI We have developed 2 different types of CCDs for the SXI in parallel.. *Advantage =>They are successfully employed for current.
Strasbourg, France, 17 December, 2004, seminairGrzegorz DEPTUCH  MAPS technology decoupled charge sensing and signal transfer (improved radiation.
Valerio Re, Massimo Manghisoni Università di Bergamo and INFN, Pavia, Italy Jim Hoff, Abderrezak Mekkaoui, Raymond Yarema Fermi National Accelerator Laboratory.
65 nm CMOS analog front-end for pixel detectors at the HL-LHC
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC Gianluca Traversi 1,2
Rutherford Appleton Laboratory Particle Physics Department G. Villani CALICE MAPS Siena October th Topical Seminar on Innovative Particle and.
Goddard February 2003 R.Bellazzini - INFN Pisa A new X-Ray Polarimeter based on the photoelectric effect for Black Holes and Neutron Stars Astrophysics.
W. Kucewicz a, A. A.Bulgheroni b, M. Caccia b, P. Grabiec c, J. Marczewski c, H.Niemiec a a AGH-Univ. of Science and Technology, Al. Mickiewicza 30,
1 Nick Sinev, ALCPG March 2011, Eugene, Oregon Investigation into Vertex Detector Resolution N. B. Sinev University of Oregon, Eugene.
Progress with GaAs Pixel Detectors K.M.Smith University of Glasgow Acknowledgements: RD8 & RD19 (CERN Detector R.&D. collaboration) XIMAGE (Aixtron, I.M.C.,
1 MPGD2009 Advancements of labelled radio-pharmaceutics imaging with the PIM-MPGD J. Donnard a, N.Arlicot b,
MPI Semiconductor Laboratory, The XEUS Instrument Working Group, PNSensor The X-ray Evolving-Universe Spectroscopy (XEUS) mission is under study by the.
Update on works with SiPMs at Pisa Matteo Morrocchi.
Upgrade of the MEG liquid xenon calorimeter with VUV-light sensitive large area SiPMs Kei Ieki for the MEG-II collaboration 1 II.
Ideas for a new INFN experiment on instrumentation for photon science and hadrontherapy applications – BG/PV group L. Ratti Università degli Studi di Pavia.
Elena Rocco Nikhef, The Netherlands On behalf of the ALICE Utrecht-Nikhef group Jamboree – Utrecht December 2012.
MICRO-STRIP METAL DETECTOR FOR BEAM DIAGNOSTICS PRINCIPLE OF OPERATION Passing through metal strips a beam of charged particles or synchrotron radiation.
Low Mass, Radiation Hard Vertex Detectors R. Lipton, Fermilab Future experiments will require pixelated vertex detectors with radiation hardness superior.
Design of a semiconductor sensor system for interceptive and real time beam monitoring in hadron therapy accelerators Luigi Gaioni FIRB Futuro in Ricerca.
Laboratorio di Strumentazione Elettronica Annual Report of Activities – a.a. 2009/2010 – October 15, 2010Phone Meeting – October 29, 2010 Characterization.
SiW Electromagnetic Calorimeter - The EUDET Module Calorimeter R&D for the within the CALICE collaboration SiW Electromagnetic Calorimeter - The EUDET.
1 /28 LePIX – Front End Electronic conference – Bergamo 25 May 2011 – Piero Giubilato LePIX – monolithic detectors in advanced CMOS Collection electrode.
DEVELOPMENT OF PIXELLATED SEMICONDUCTOR DETECTORS FOR NEUTRON DETECTION Prof. Christer Fröjdh Mid Sweden University.
The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT 1 INFN Sezione di Pavia I Pavia, Italy.
Digital Acquisition: State of the Art and future prospects
Progress with GaAs Pixel Detectors
(Chapter 7) CHEM–E5225 Electron microscopy
SVT – SuperB Workshop – Annecy March 2010
M. Manghisoni, L. Ratti Università degli Studi di Pavia INFN Pavia
Dima Maneuski, Advances in rad-hard MAPS 2016, Birmingham
Ivan Peric, Christian Kreidl, Peter Fischer University of Heidelberg
10-12 April 2013, INFN-LNF, Frascati, Italy
Charge sensitive amplifier
Idee per lo sviluppo del Charge Identifier
M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi
First production of Ultra-Fast Silicon Detectors at FBK
Associazione EURATOM-ENEA sulla Fusione
L. Ratti, M. Manghisoni Università degli Studi di Pavia INFN Pavia
WP microelectronics and interconnections
A 3D deep n-well CMOS MAPS for the ILC vertex detector
HV-MAPS Designs and Results I
L. Ratti V SuperB Collaboration Meeting
PixFEL Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at FELs Programma di attività e preventivo di spesa 2014.
SVT Issues for the TDR What decisions must be taken before the TDR can be written? What is the mechanism for reaching those decisions How can missing information.
Charge Coupled Device Advantages
Valerio Re (INFN-Pavia) on behalf of the RD53 collaboratios
Rita De Masi IPHC-Strasbourg on behalf of the IPHC-IRFU collaboration
A Low Power Readout ASIC for Time Projection Chambers in 65nm CMOS
The Pixel Hybrid Photon Detectors of the LHCb RICH
Detector R&D in KAPAC Outline Compton Camera SOI detector
MAPS with advanced on-pixel processing
SCIENTIFIC CMOS PIXELS
Mimosa18 on PCB (from the chip side)
TCAD Simulation and test setup For CMOS Pixel Sensor based on a 0
Hybrid silicon pixel detector (readout chip)
A new family of pixel detectors for high frame rate X-ray applications Roberto Dinapoli†, Anna Bergamaschi, Beat Henrich, Roland Horisberger, Ian Johnson,
New detectors are needed! Prototype Characterization
R&D of CMOS pixel Shandong University
Perugia SuperB Workshop June 16-19, 2009
Why silicon detectors? Main characteristics of silicon detectors:
Active Pixel Sensors for Electron Microscopy
Presentation transcript:

Silicon eyes for radio-labeled biological samples Proposal for the PRIN 2012 call L. Ratti Università degli Studi di Pavia, INFN Pavia PRIN 2009 Collaboration Meeting, Milan, March 28th 2013

General features of the project Purpose: develop a semiconductor detection system for (in particular, but not only, 3H) radio-labeled for digital autoradiography of biological specimens study advanced technological solutions for the design of compact detection systems (sensor array + electronics) featuring high spatial resolution, high functional density and fast readout architecture develop advanced tools for simulation and test of large detection systems build a cm-scale demonstrator detector Duration: 3 years ERC Domains: PE (main, 7_2 – Electronic Enginering, and 7_5 – Micro- and Nano-Electronics) and LS (7_2 – Diagnostic Tools)

Participating units UNIBG Valerio Re (Unit Coordinator) UNINSUBRIA Massimo Manghisoni Gianluca Traversi UNINSUBRIA Massimo Caccia (Unit Coordinator) UNIPV Lodovico Ratti (PI) Carla Vacchi The proposal is of the ‘PRIN Advanced’ type

Motivation Present devices for autoradiography (AR) of biological specimens (emulsion films and phosphor imaging plates) feature poor sensitivity and limited dynamic range and linearity and lack the capabilities for real time digital imaging Many feasibility studies and developments based on solid state microelectronic technologies (CCDs, CMOS MAPS, hybrid pixels, DEPFETs) have led to encouraging results, although none of the approaches has demonstrated the capability to satisfy the entire set of requirements for AR (sensitive area, spatial resolution, duty cycle, detection sensitivity) The goal is to demonstrate the feasibility of a large area, high granularity, (almost) zero-dead time, highly sensitive semiconductor detection system for AR by building a (not so) small, seamlessly scalable one

Digital tritium autoradiography Detector specifications: sensitive area: in tritium AR, single biological samples do not exceed an area of 12 mm x 12 mm; a typical drug discovery experiments is made by some 20 to 40 samples to be imaged simultaneously, therefore requiring quite a large sensitive area; granularity: between about 20 and 50 μm; a fine pitch would offer the flexibility of optimizing either the image resolution or the contrast depending on the end user specific analysis but, for a given detector area, would increase the power dissipation; duty cycle: as high as possible to take advantage of the detector sensitivity obtained through sensor and front-end design optimization and noise minimization; due to the very low rate of the source, a sparse readout architecture can be exploited to minimize the data throughput to the DAQ and keep the dead time to a minimum

Digital tritium autoradiography Detector specifications (cont’d): entrance window: 3.8 keV electrons have a submicron range in silicon; MAPS need to be back thinned to the epitaxial layer, or to 10-20 μm in the case of epiless subtrates; detection sensitivity to low energy particles: depends on S/N; S is affected by entrance window (<100 nm), CCE and charge sharing, cross talk and impact point position; noise depends on front-end design and detector leakage; target sensitivity is 10-2 decays/minute/mm2; imaging capability: relies on the detection sensitivity of the sensor and on the ability of the system to reject noise and cosmic ray background hits; detector mounting: since the detector has to be operated in back illumination conditions, the chip has to be connected to the external bias and I/O circuitry while being bonded face down to the support, in such a way that the chip backside looks toward the radio-labeled samples

Technology choice (likely) The selected microelectronic process is based on a 180 nm CMOS technology with quadruple well option, featuring a relatively thick (up to 18 um) epitaxial layer

Final goal of the project The final product of the project will be a demonstrator consisting in a centimeter-scale detector, exceeding the available commercial and non commercial solutions for autoradiography in resolution and detection sensitivity, together with a data acquisition, processing and visualization system While the fabrication of a real application-scale device is out of the scope of this project, the demonstrator will be designed to be easily expandable to a larger-scale detector

Role of the participating units UNIBG analog front-end design - choice between CSA+discriminator and 3T readout+CDS, or between binary readout or analog readout+ADC prototype laboratory tests UNINSUBRIA prototype characterization with 3H and 14C sources DAQ development and flltering and imaging algorithm optimization device qualification with radio-labeled biological samples UNIPV physics simulation of the collecting electrode - best trade-off among electrode area, geometry and location, and system noise, effects of substrate thinning on the sensor properties, substrate contact distribution design of a digital architecture with selective readout capabilities – minimum readout bandwidth and maximum duty cycle prototype laboratory tests

Activity plan The activity program of the project is as follows (mo=month) mo1 - mo6: design of the first prototype (small area), also based on device simulations for charge collection optimization; investigation and assessment of substrate thinning techniques, chip to PCB flip chip bonding techniques and thin chip support; mo7 - mo9: first prototype production; setup of the data acquisition based on available laboratory solutions; mo10 - mo15: first prototype characterization, selection of the best performing architecture; mo16 - mo23: design of the second, cm-scale prototype; mo24 - mo26: production of the second prototype; setup of a dedicated data acquisition system; mo27 - mo36: characterization of the second prototype in laboratory; imaging tests with 3H and 14C standard sources and real radio-labeled biological samples.