CHAPTER 10 AC Power Bipolar Junction Transistors: Operation, Circuit Models, and Applications.

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Presentation transcript:

CHAPTER 10 AC Power Bipolar Junction Transistors: Operation, Circuit Models, and Applications

Controlled-source models of linear amplifier transistor operation Figure 10.1 10-1 Figure 10.1

Models of ideal transistor switches Figure 10.2 10-2 Figure 10.2

Bipolar junction transistors Figure 10.4 Figure 10.4 10-3

Flow of emitter electrons into the collector in an npn BJT Current flow in an npn BJT Figure 10.5 Figure 10.6 Figure 10.5, 10.6 10-4

Definition of BJT voltages and currents Figure 10.7 Figure 10.7, 10.8 The BE junction open-collector curve Figure 10.8 10-5

(a) Ideal test circuit to determine the i-v characteristic of a BJT (b) The collector-emitter output characteristics of a BJT Figure 10.9a Figure 10.9b Figure 10.9 10-6

Determination of the operation region of a BJT Figure 10.10 Figure 10.10 10-7

Load-line analysis of a simplified BJT amplifier Figure 10.13 Figure 10.13 10-8

Circuit illustrating the amplification effect in a BJT Figure 10.15 Figure 10.15, 10.16 Amplification of sinusoidal oscillations in a BJT Figure 10.16 10-9

Practical BJT self-bias DC circuit Figure 10.20 Figure 10.20, 10.21 DC self-bias circuit represented in equivalent-circuit form Figure 10.21 10-10

An npn BJT large-signal model Figure 10.22 Figure 10.22 10-11

BJT switching characteristic Figure 10.30 Figure 10.30 10-12

TTL NAND gate Figure 10.32 Figure 10.31 Figure 10.31, 10.32 10-13