CEA DSM Dapnia Antimatter in materials research: defect spectroscopy and study of porous systems using positrons Laszlo Liszkay DAPNIA/SACM/LEDA.

Slides:



Advertisements
Similar presentations
Epitaxial Silicon Detectors for Particle Tracking Overview on Radiation Tolerance at Extreme Hadron Fluence G. Lindström (a), E. Fretwurst (a), F. Hönniger.
Advertisements

Ion Beam Analysis techniques:
Emre Ertuğrul Emin Şahin Seçkin Gökçe KMU 396 Material Science and Technology.
Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.
Neutral Particles. Neutrons Neutrons are like neutral protons. –Mass is 1% larger –Interacts strongly Neutral charge complicates detection Neutron lifetime.
ECE/ChE 4752: Microelectronics Processing Laboratory
Liquid Helium Scintillation T. Wijnands EN/HDO Candidate for detecting beam losses in the LHC ?
Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments
Radiation therapy is based on the exposure of malign tumor cells to significant but well localized doses of radiation to destroy the tumor cells. The.
RF background, analysis of MTA data & implications for MICE Rikard Sandström, Geneva University MICE Collaboration Meeting – Analysis session, October.
Chapter 8 Ion Implantation Instructor: Prof. Masoud Agah
ECE/ChE 4752: Microelectronics Processing Laboratory
FREE CARRIER ABSORPTION TECHNIQUES - MICROWAVE & IR –
III. Analytical Aspects Summary Cheetham & Day, Chapters 2, 3 Chemical Characterization of Solid-State Materials Chemical Composition: Bulk, Surface, …
INRNE BAS NEC'2007, Varna, Bulgaria Positron annihilation versus electron cloud Angel H. Angelov Institute for Nuclear Research and Nuclear Energy.
1Ruđer Bošković Institute, Zagreb, Croatia
J.Vaitkus et al., WOEDAN Workshop, Vilnius, The steady and transient photoconductivity, and related phenomena in the neutron irradiated Si.
PC4250 Secondary Ion Mass Spectrometry (SIMS). What is SIMS? SIMS is a surface analysis technique used to characterize the surface and sub-surface region.
1 Scintillators  One of the most widely used particle detection techniques Ionization -> Excitation -> Photons -> Electronic conversion -> Amplification.
Measurement and modeling of hydrogenic retention in molybdenum with the DIONISOS experiment G.M. Wright University of Wisconsin-Madison, FOM – Institute.
57 Mn Mössbauer collaboration at ISOLDE/CERN Emission Mössbauer spectroscopy of advanced materials for opto- and nano- electronics Spokepersons: Haraldur.
International Workshop on “Influence of atomic displacement rate, neutron spectrum and irradiation temperature on radiation-induced ageing of power reactor.
The Production of Cold Antihydrogen w. A Brief History of Antimatter In 1928, Paul Dirac proposes antimatter with his work in relativistic quantum mechanics.
Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.
L. Liszkay IRFU CEA Saclay, France GBAR collaboration
Depth Profiling with Low-Energy Nuclear Resonances H.-W. Becker, IAEA May 2011 CRP: Reference Database for Particle Induced Gamma-ray Emission (PIGE) Ruhr-University.
Post Anneal Solid State Regrowth
Ion Implantation and Ion Beam Analysis of Silicon Carbide Zsolt ZOLNAI MTA MFA Research Institute for Technical Physics and Materials Science Budapest,
Recent related paper: Solid State Phenomena, (2011) 313 Positron Annihilation on Point Defects in n-FZ –Si:P Single Crystals Irradiated With 15.
FLAR project S.L. Yakovenko JINR, Dubna,Russia. 2 Contents 1.FlAIR project 2.AD facility at CERN 3.Antyhydrogen and Positronium in-flight at FLAIR 4.LEPTA.
Determination of the 3  fraction in positron annihilation Bożena Jasińska Institute of Physics, Maria Curie Sklodowska University Lublin, Poland.
Gamma-induced positron lifetime and age-momentum
Scanning capacitance microscopy
1 US PFC Meeting, UCLA, August 3-6, 2010 DIONISOS: Upgrading to the high temperature regime G.M. Wright, K. Woller, R. Sullivan, H. Barnard, P. Stahle,
Status Report of the LISOL Laser Ion Source Yu.Kudryavtsev, T.Cocolios, M.Facina, J.Gentens, M.Huyse, O.Ivanov, D.Pauwels, M.Sawicka, P.Van den Bergh,
Chapter 5 Interactions of Ionizing Radiation. Ionization The process by which a neutral atom acquires a positive or a negative charge Directly ionizing.
FLAIR meeting, GSI March Positron Ring for Antihydrogen Production A.Sidorin for LEPTA collaboration JINR, Dubna.
Basics of Ion Beam Analysis
Lecture 7 Lattice Defects, Vacancies PHYS 430/603 material Laszlo Takacs UMBC Department of Physics.
Antihydrogen Workshop, June , CERN S.N.Gninenko Production of cold positronium S.N. Gninenko INR, Moscow.
New physics with intense positron beams Alfredo Dupasquier Frascati, 20 gennaio 2010.
Proposed Laboratory Simulation of Galactic Positron In-Flight Annihilation in Atomic Hydrogen Benjamin Brown, Marquette University, Milwaukee, WI, USA.
Design and Simulations of the Source of Polarized Slow Positrons at ELI-NP Nikolay Djourelov ELI-NP, IFIN-HH, 30 Reactorului Str, MG-6 Bucharest-Magurele,
Overview of low energy positron physics and applications
Ялта Конференция Yalta-, Univ. of Tokyo, Ryo FUNAKOSHI Univ. of Tokyo Ryo FUNAKOSHI ATHENA collaboration ATHENA: a High Performance detector for.
Zeudi Mazzotta* On behalf of the AEgIS collaboration from Università degli studi di Milano Istituto Nazionale di Fisica Nucleare.
Boron and Phosphorus Implantation Induced Electrically Active Defects in p-type Silicon Jayantha Senawiratne 1,a, Jeffery S. Cites 1, James G. Couillard.
Ion Implantation CEC, Inha University Chi-Ok Hwang.
Testing antimatter gravity: the Aegis experiment at Cern Phd Student: Michele Sacerdoti Phd Workshop: 12-13/10/2015 Supervisors: Fabrizio Castelli, Marco.
Characterization of He implanted Eurofer97
Relativistic Kinematics for the Binding Energy of Nuclear Reactions
Chapter 5 Interactions of Ionizing Radiation
MBE Growth of Graded Structures for Polarized Electron Emitters
Lecture 2 OUTLINE Important quantities
ADvanced MOnolithic Sensors for
Overview Lecture 2 Trapping antiprotons Antihydrogen ATHENA and ATRAP
Antimatter in materials research: defect spectroscopy and study of porosity using positrons Laszlo Liszkay CEA Saclay DSM/IRFU/SACM/LEDA.
Results from the first diode irradiation and status of bonding tests
Siara Fabbri University of Manchester
Chapter 8 Ion Implantation
Read: Chapter 2 (Section 2.3)
1.6 Magnetron Sputtering Perpendicular Electric Magnetic Fields.
PHL424: γ-decay γ-decay is an electromagnetic process where the nucleus decreases in excitation energy, but does not change proton or neutron numbers This.
Angela Gligorova on behalf of the AEgIS and Medipix collaborations
CHEM 312: Lecture 6 Part 2 Gamma Decay
Lecture 2 OUTLINE Semiconductor Fundamentals (cont’d)
Review of semiconductor physics
Vacancy defects induced by proton irradiation
IC AND NEMS/MEMS PROCESSES
Semiconductor Detectors
Presentation transcript:

CEA DSM Dapnia Antimatter in materials research: defect spectroscopy and study of porous systems using positrons Laszlo Liszkay DAPNIA/SACM/LEDA

CEA DSM Dapnia Outline condensed matter – positron interaction methods of positron annihilation spectroscopy positrons in materials research (defect spectroscopy, porosity) the SOPHI/SELMA project and its possible applications

CEA DSM Dapnia Positron-electron annihilation e+e+ from  + decay or pair production e-e- from a condensed matter positronium (Ps) e + -e - atom annihilation 2  photons (511 keV) 25 % paraPs (singlet) 125 ps lifetime 2  photons (511 keV) 75 % orthoPs (triplet) 142 ns lifetime 3  photons ( keV)

CEA DSM Dapnia Conventional positron annihilation spectroscopy keV e + ( 22 Na) slowing down ~ ps diffusion (E~kT) diff length L~100 nm “bulk” annihilation from Bloch state  b ~ ps higher momentum “trapping” in a vacancy  v >  b lower momentum positronium (Ps) formation in voids 1-2 ns Bloch statemonovacancydivacancy Si  1.28 MeV 100  m

CEA DSM Dapnia positron moderator principle thin (~  m) W (Ni, Pt) foil (negative e + work function), solid Ne (Kr) 200 keV e + annihilation fast e + thermalization, diffusion slow (eV) e + Ps efficiency: (W) (Ne)

CEA DSM Dapnia Positron spectroscopy with “slow” (keV) positrons e+ ~1-10 keV diffusion to surface annih. in crystal (see before) e + emission (~ eV, negative work function) positronium (Ps) emission (oPs 142 ns, pPs 125 ps) thermal (3/2kT) or fast (few eV) surface state (450 ps) Makhovian profile Mean impl. range

CEA DSM Dapnia Detectables: lifetime e+e+ pulse or “start”  photon sample 511 keV annihilation  photon I i intensities – proportional with vacancy concentration  i lifetimes – characteristic value for each vacancy type typically ps (bulk solid, vacancies) 1-2 ns (large voids, positronium) Schema of the pulsed positron beam in Munich

CEA DSM Dapnia Detectables: gamma energy distribution (Doppler spectroscopy) High purity Ge detector measurement of the Doppler broadening of the annihilation radiation due to the Doppler shift where p L is the longitudinal momentum component of the electron-positron pair proportional with electron momentum (e + thermalized) two lineshape parameters: S (low momentum) : valence electrons W (high momentum): core electrons  chemical information S-W plot: identification of the defect Sample e+e+ the 511 keV annihilation peak

CEA DSM Dapnia energy-dependent positron spectrum surface bulk implantation induced defects defect-free crystal defect profile

CEA DSM Dapnia defect spectroscopy with positrons sensitive to defects with free volume (vacancy, vacancy complex, voids) sensitivity up to (lifetime changes below 1 ps are reliably observed) open volume defects: important role in mechanical failure (metals), dopant compensation (compound semiconductors), radiation damage (reactor pressure vessel steels, implantation) non-destructive probe, in most cases does not require special sample treatment

CEA DSM Dapnia sensitivity range depth range: surface, ~10 nm – ~5  m sensitivity: defect dependent e.g. in silicon:

CEA DSM Dapnia Lifetime spectroscopy with positrons: identification of defects in semiconductors thin Mg doped GaN layers (2  m) (slow positron beam only) problem: electrical compensation of dopant (Mg) that limits p type doping shallow positron traps + vacancy defects (S parameter measurements) vacancies + vacancy clusters (lifetime measurements) identification of V N -Mg Ga complex with 180 ps characteristic lifetime(lifetime + Doppler coincidence measurement) 15 keV e + Doppler e + lifetime Doppler coincidence Hautakangas et al, Physical Reviews Letters 90, (2003)

CEA DSM Dapnia Defect spectroscopy using slow positrons: implantation-induced defects trapping in vacancies saturated trapping in vacancies trapping in larger defects (500 ps) 250 MeV Kr and 710 MeV Bi in sapphire (Al 2 O 3 ) homogeneous defect concentration in the positron range vacancies and larger defects can be identified

CEA DSM Dapnia positronium used in antimatter research: search for an efficient positron – slow orthopositronium converter positron + antiproton  antihydrogen more efficient to use positronium in the reaction + further reaction creates positive antihydrogen ion configuration: orthopositronium “cloud” as a target for antiproton beam p + Ps  H + e - H + Ps  H + + e - H + deceleration + cooling H + at μK

CEA DSM Dapnia Scheme of antihydrogen production (Patrice Perez, SPP) aim: maximize the effective orthopositronium density during the antiproton pulse e + beam Ps antiproton beam Ps e + /positronium converter 13 keV, 20 ns every 20 min oPs cloud from neutral e - - e + plasma trap e + in ~ 10 ns (transmission or reflection configuration)

CEA DSM Dapnia Study of nanoporous systems using positrons: detection of open porosity with orthopositronium time-of-flight e+e+ oPs self-organized porous SiO 2 system, 400  m layer potential use in filtration, sensor technology similar layers used as low-k dielectrics in semiconductor technology porosity detected by positron Doppler or lifetime method open porosity (permeability) detected by oPs TOF method TOF 3  annihilation

CEA DSM Dapnia Positron microcope: positron spectroscopy with pulsed microbeam Vacancy clusters close to a fatigue crack in Cu spot diameter: ~ 2  m Vacancies at a crack tip in GaAs David et al, Phys. Rev. Letters 87, (2001) Egger et al, Applied Surface Science 194, 214 (2002)

CEA DSM Dapnia III. Potential use of the SELMA/SOPHI system in materials research potential development of the SELMA/SOPHI system why do we need intense positron sources for positron spectroscopy? the positron source in international comparison

CEA DSM Dapnia Positron source project in Saclay: Linac-based intense positron source Linac (SELMA) e + /e - separation (SOPHI) e+ moderator W target electrons at 6 MeV 300 Hz 0.2 mA positrons 1 MeV /s positrons 3 eV /s e + -positronium converter Trap(s) cold orthopositronium antiprotons e + pulse 10 ns Trap continuous beam Chopper/buncher/accelerator Target Lifetime spectrometer  Materials research electrons + positrons 100 ps pulses; 0-30 keV (200 keV?) energy Patrice Perez (SPP), Jean-Michel Rey Catherine Corbel (LSI) Aline Curtony, Olivier Delferrière...

CEA DSM Dapnia SOPHI geometry W target Dipole (e - -e + selection) ~ 0.2 T transport field Moderator (next phase) Coils expected performance: > e + /s with 1 MeV peak energy 6 MeV electron beam (Linac)

CEA DSM Dapnia Why do we need intense positron sources? conventional 22 Na-based sources with up to 100 mCi (4x10 9 Bq) activity  cps slow positron yield  ~ 1-2 energy-dependent positron measurement in a day  temperature-dependent, electric field-dependent measurement, annealing is very time consuming positron microscopy: losses during focussing  even longer measuring time / pixel  imaging with positrons is hardly feasible measurements requiring longer specimen-detector distance (e.g. at very high temperature or angular correlation) are very time consuming effects on shorter (s, min) timescale are not detectable with long measurements experiments with Bose-Einstein condensed positronium requires high positronium density antihydrogen production

CEA DSM Dapnia Performance of SOPHI/SELMA: comparison with other intense source projects conventional 22 Na source: max. 4x10 9 fast, ~ moderated e + Intense positron source projects in Europe: NEPOMUC (Garching near Munich, Germany) based on a 20 MW research reactor (FRM II, 8x10 14 cm -2 s -1 thermal neutron flux)  5x10 8 moderated e + /s (functional) EPOS (Rossendorf, near Dresden, Germany) based on a 40 MeV (0.4 mA avg. max. current) Linac 8x10 8 moderated e + /s expected (1/4 max Linac current) (not yet functional) POSH (Delft, The Netherlands) based on a research reactor about 7x10 7 moderated e + /s (2001), max. 4x10 8 e + /s (with fresh moderator) SELMA/SOPHI project in Saclay fast (unmoderated) e + /s ( ~ 20 strong 22 Na source)  moderated e + /s can be expected advantages: no permanent radioactivity, source can be switched off, easy to maintain (no neutron production) dedicated Linac, no maintenance needed, no shared resource  available nearly 100% of the time

CEA DSM Dapnia Summary SOPHI/SELMA project: possibility of a stable, reliable, independent positron source for materials research with competitive slow positron yield