Page 1 Liverpool January 11th, 2012 LHCb Upgrade Meeting Planar Silicon Detectors I. Tsurin Generic sensor R&D ATLAS-oriented commitments LHCb-oriented commitments Perspecives

(IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 58, NO. 3, JUNE 2011) Sensor Technology is better in terms of achievable resolution Planar Compared to “p-in-n” detectors: Radiation hardness Compared to “n-in-n” detectors: Advantages of the “n-in-p” process Possibility of back-thinning for low material budget Low manufacturing costs (single-side processing) Easy mechanical handling of the backplane Bulk type does not invert - can be operated under-depleted, - relaxed temperature conditions, - simpler data analysis. Page 2

Planar Sensor R&D Page 3 Readout implants (strips or pixels): granularity, fill factor -> photon / particle detection, analogue / binary readout Implant termination (guard structure) Design features: field plates, biasing scheme, bonding and test contacts, etc. Dicing: saw cut, laser cut, scribing and breaking Operating conditions and maintenance: radiation dose, bias voltage, temperature profile (annealing) Strip detector Pixel detector Design goals: spatial resolution and efficiency

Instrumentation Page 4 RD-50 collaboration Micron Semiconductor Ltd e2v technologies PLC IMB-CNM Barcelona Research partners: 2 Test stands for characterisation of silicon wafers and diced sensors Test stands for characterisation of pixel detector modules: FE-I3 and FE-I4 (being commissioned)

Pixel sensors for the ATLAS Upgrade Page 5 IBL pixel sensors Quad pixel sensors Tiles for the “Insertable B-layer” to be read out by two FE-I4 chips. 2 design options: test & production Pixel tiles to cover large area to be read out by four FE-I4 chips.

Page 6 Pixel Detectors with Wire-bonded Readout Shuffled R/O channels to minimise the cross talk between connection lines Pixel sensors with interleaved readout implants connected to wire bond pads Pulse shape analysis Cross-calibration of ToT Fast “Cold” bonding to the readout for annealing studies Re-use of bonding pads No need to irradiate the readout -> good data quality Inter-”strip” resistance and capacitance measurements Measurement of the punch- through voltage of the biasing circuit

Analogue Strip and Pixel Readout Page 7 Sr-90 and laser test stand Beam test telescope Readout systems are based on the Beetle V1.5 chip VELO sensor aging studies could benefit Most unbiased method of characterisation of silicon detectors

Measurements of APC and APR detectors Page 8

Page 9 Comparison of APR and AC coupled Strip detectors

Seed cut = 3.5 x ENC Cluster = 2.5 x ENC Cluster Size Analysis after Irradiation Page 10

Page 11 Cluster Size vs. Various Doses

900 V Page V Cluster Size trend with Dose 700 V 1100 V

Pixel sensors for the VELO upgrade Page 13 New 6 inch wafer submitted to Micron Semiconductor to be manufactured in “n-in-p” technology Contains tiles and single chip sensors with various dicing options.

Options for Readout Implants Page 14 Further studies require readout system and ASIC stock Medipix subscription fee ~100k Proposal to design a generic 50 x 50 um amplifier-peak detector cell that could be used to compile the analogue readout chip of any geometry for studies of pixels. Chip production through multi- project wafer runs (~7k each, 50 dice guaranteed).

Good contacts with IZM, VTT In development a bump bonding centre in RAL/Daresbury/N8 For cost reduction: development of UBM at the manufacturer side (namely with Micron) Page 15 Perspectives Bump-bonding: