Large size MPGD production: -GEM update -read out board infos Rui De Oliveira CERN 28/04/2009.

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Presentation transcript:

Large size MPGD production: -GEM update -read out board infos Rui De Oliveira CERN 28/04/2009

STD Single mask GEM Goal 2 meter x 450mm GEM Single mask process (why?) 2um or 5um Copper on both sides 70um 55um 70um 50 to 60um

Raw material Single side copper patterning Polyimide etching Copper differential etching Main direction : Conical GEMs This idea was found when we started making GEMs in 1996

Top layer 15um rim No Spikes

Bottom layer High sparking voltage in air 750 to 800V Characterisation available (Serge Duarte Pinto 2008) 2-3um rim No spikes

Problems: –Large rims on top –Yield in the differential etching step –Charging up –Hole shape too conical (70um top, 40um bottom best result) –Lower gain –GEM not symetrical ( but perhaps not a problem) Directions for improvements –Holes more cylindrical –Remove the rims

Holes more cylindrical  improve the polyimide etching Up to 30 different chemistries tested Ultrasonic bath tested Effect of temperature tested Spray etching still under test!

+ Strong isotropic conical etching stable from 7min to 15min Anisotropic Cylindrical etching down to etching isotropic etching down to min etching (lower quality) We found 2 interesting chemistries Mixed conical/cylindrical etching 7min +3min 70um top 50 to 60um bot OK! 12

Chemical Polyimide etching Stripping Resist on bottom Removing the rims  protect the metals Au plating on top Resist protection on bottom Conventional spray etching of naked copper

Bottom Single Mask GEMs produced in january 2009 (100mm x 100mm) Problems: -Needs a protecting metal before second spray etch (cost) -Still some delaminations on top layer due to spray etch -how to strip the Au layer? -uniformity seems good but need to be verified These pieces have been characterized by Giovanni Bencivenni Result: good enough to make a detector! Top

Most critical problem with Au or Tin protection Sporadic defect : hermeticity break at the copper Polyimide junction Before etching After etching Top

So what should we do now? Our problem is to etch the bottom electrode without etching the top one But both are made of copper

So what should we do now? Our problem is to etch the bottom electrode without etching the top one But both are made of copper We went back to the electrochemical possibilities! 1: electro-deposition 2: active corrosion protection

DC supply Acidic cupric sulfate bath Mild etching without polarization Copper electrode Loosing ions (etched) + - Cu++ Copper electrode Getting ions (deposition) e- 1:Electro-deposition Reverse use 1:Electro-deposition Reverse use

DC supply Cu++ Acidic cupric sulfate bath The etching is proportional to the current Non connected mildly etched Top Electrode + - Copper electrode Loosing ions (etched) Copper electrode getting ions (deposition) Resist protection

Starting structure Current lines

After a few minutes the copper is etched and the resistivity starts to increasing locally at the center The current density increases around the hole edge Current lines in the bath Looking for the lower resistivity connection

It induce an etching increase around the hole The etching is directly related to the current density

A thin copper layer is created, impossible to etch and leaving spikes At one point the resistivity of this layer is too high to drive the current

Top layer perfectly defined 60um

Rim not precise Many spikes Bottom layer Sparking voltage low : 500V in air

When the copper is immersed a voltage drop V1 appears during etching copper V1 Chemistry etching the copper Metallic container Selected for having no reaction with the bath 2: Active corrosion protection 2: Active corrosion protection

If we apply a voltage (V2) Opposite and > to V1 the etching reaction stops copper V1 Chemistry etching the copper Metallic container V2

Examples of application Protection of boat hull against Sea water Protection of pipes against Humid ground corrosion Electrodes to Polarize the water

connected Non etched Top Electrode Lower voltage than the Chemical reaction +3V Resist layer +3V0V Bath at +3V -everything at ground will be protected -everything at +3V will be chemically etched - An example of active corrosion protection

Starting structure

Conventional isotropic metal etching

The hole is created but still an angle in the copper

With over etch

Going back to Polyimide etching for 30 sec The hole become cylindrical

TOP BOT TOP Kapton BOT Kapton Sparking voltage 700 V in air

Test equipment This technology is compatible with roll to roll process

12 GEMs Built middle of April (100% yield) 4 given to Giovanni Bencivenni 4 given to Serge Duarte Pinto 4 will be given to Bernd Voss Waiting for caracterisation Build a 1m x 33cm during May if results OK Summary

Read out boards possibilities at CERN typecomplexityMax sizePrice factor (aproximative) technologydrillingplating 1D 1mm pitch low2m x 0.6m1 xSingle sided board n/ano 1D 250um pitch Medium2m x 0.6m1.5 xSingle sided board n/ano 2D 1mm pitch Medium/low1.4m x 0.5m1.5 xDouble sided board Mechanical1 plating 2D 400um pitch Medium/High0.6m x 0.5m3 xDouble sided board Micro via1 plating 2D GEM 400um pitch medium0.6m x 0.45m2.5 xDouble sided flex Mechanical or Micro via or no hole 1 plating Or no 3D 400um pitch high0.4m x 0.4m5 x5 layersBlind via + Micro via 4 platings PADs 5mm x 5mm medium0.5m x 0.5m2 xMin 3 layersBlind via + Mechanical 2 platings Pixel 0.5-2mmHigh0.4m x 0.4m6 xDepends on pixel. 6 to 10 layers Blind via + Micro via 4 and more