1. BCAM First Nano-wire FinFETs via UV-based Nanoimprint Lithography Nanowire fin field effect transistors via UV-based nanoimprint lithography* A. Fuchs,a M. Bender, U. Plachetka, L. Kock, T. Wahlbrink, H. D. B. Gottlob, J. K. Efavi, M. Moeller, M. Schmidt, T. Mollenhauer, C. Moormann, M. C. Lemme, and H. Kurz Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Huyskensweg 25, D-52074 Aachen, Germany

2. BCAM Outline 1.Nanoimprint 2.UV-Nanoimprint 3.FinFETs 4.Fabrication of FinFETs 5.Performance of FinFETs fabricated

3. BCAM Introduction to Nanoimprint Nanoimprint lithography (NIL) Conventional NIL processes, coined as stamp and step processes require thermal cycles between 140°C and 180°C and high pressures during the hot embossing procedure. Thermal and mechanical loads involved in these processes represent a nearly prohibitive burden for fast and high precision alignment. The mechanical masses to be moved in high throughput equipment require a large degree of complex mechanical handling.

4. BCAM Background on UV-Nanoimprint UV based nanoimprint lithography (UV-NIL) The low pressure (<1bar) as well as the absence of any thermalcycles appears very attractive for high precision printing down to 10 nm and relaxes the technical requirements for placement accuracy and pattern fidelity to a large extent.

5. BCAM Wafer level UV-Nanoimprint Step & Repeat UV Nanoimprint 1. A resist is spin coated on the substrate. 2. For highest resolution and minimum distortion a rigid fused silica template is used to imprint features die by die. The template is pressed into a thin layer of imprint resist via uniform pressure of a few hundred millibar. 3. After alignment of substrate and template in contact UV light is used to harden the resist. 4. After detachment the template is moved to the next position on the wafer and the process is repeated until the wafer is completely patterned.

6. BCAM Introduction on FETs

7. BCAM Introduction on FinFETs

8. BCAM Process flow of FinFETs via UV-Nanoimprint 5 mm thick 1in mold used with 150nm deep features. 1. Pattern the S/D and channel structure a. Imprint process at reduced ambient pressure 20 mbars and imprint pressure of 300mbars. b. UV curing resist---mold detached---RIE etching 2. CVD polysilicon for gate (heavily doped) 3. Pattern the gate 4. S/D implantation (As=2 x 10E20 ions/cm^2)

9. BCAM SEM images of FinFETs via Nanoimprint

10. BCAM Performance result of FinFETs Transistor output characteristics exhibits linear and saturation regions!!! Typical field effect transistor behavior is clearly observed!!! Wait…….

11. BCAM Conclusion 1.Promising approach. 2.Yield?? Questions???