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Technology Department 2 April 2015A.Adraktas1 MKD 3D field calculations A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015.

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Presentation on theme: "Technology Department 2 April 2015A.Adraktas1 MKD 3D field calculations A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015."— Presentation transcript:

1 Technology Department 2 April 2015A.Adraktas1 MKD 3D field calculations A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015

2 Technology Department 2 April 2015A.Adraktas2 MKD 3D field calculations 3D field calculations for the existing GTO stack

3 Technology Department 2 April 2015A.Adraktas3 MKD 3D field calculations 3D field calculations for the existing GTO stack

4 Technology Department 2 April 2015A.Adraktas4 MKD 3D field calculations 3D field calculations for the existing GTO stack

5 Technology Department 2 April 2015A.Adraktas5 MKD 3D field calculations Calculation of inductance of model Based on previously existing models in opera 2d the inductance of the gto was calculated to L≈132nH

6 Technology Department 2 April 2015A.Adraktas6 MKD 3D field calculations Conclusions According to the simulations high electric field is predicted near the surface of the araldite around the ground busbar where the discharges have benn observed. There is also a high field near the surface of the capacitor stack. Moving the ground busbar in a larger distance from the HV conductor will probably reduce the field significantly The inductance prediction is based on a previously existing model. If we assume current density to be in a larger radius than before this would give us a lower inductance of the model(ongoing)


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