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GLD Intermediate tracker task list Configuration & software Silicon Sensor Electronics Support structure H.J.Kim, Kyungpook U. for intermediate tracker.

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Presentation on theme: "GLD Intermediate tracker task list Configuration & software Silicon Sensor Electronics Support structure H.J.Kim, Kyungpook U. for intermediate tracker."— Presentation transcript:

1 GLD Intermediate tracker task list Configuration & software Silicon Sensor Electronics Support structure H.J.Kim, Kyungpook U. for intermediate tracker group ACFA 8 workshop

2 Intermediate Tracker in GLD W-Si Cal TPC Beam Pipe IP IT VTX

3 Configuration How many layers in central part? Disk type of endcap? ( for physics & PFA) Single side vs Double side SD Background study in endcap region Simulation with different IT configuration Optimization for physics improvement IT track reconstruction and linking with VTX and tracking

4 GLD Default Geometry (vtx/tracking only) IT (as in gld_v1.dat and C++ codes): spatial resolution 10  m 4 layers (561  m Silicon strip) r=9 cm (innermost), 30 cm (outermost) half z = 18.5 cm (innermost), 62 cm (outermost) |cos  |<0.9 CAD drawing by S.K.Park TPC

5 With and W/O IT H. Ha Without IT: 3.9 x 10 -5 (GeV) -1 (high momentum limit) With IT: 4.4 x 10 -5 (GeV) -1 default goal(?): 5x10 -5 (GeV) -1 Geant4/single muon @ (cos  =0)  /p T 2 (GeV) -1 TPC only TPC+VTX TPC+IT+VTX  /p T 2 sampling term multiple scattering term TPC only10.9 x 10 -5 6 x 10 -4 TPC+VTX4.37 x 10 -5 7 x 10 -4 TPC+IT+VTX3.87 x 10 -5 7 x 10 -4 1 GeV

6 e+e-  ZH, ZZ Study (ongoing) m H = 120.4 GeV  = 1.7 GeV Y.I.Kim ee  ZH GLD default configuration (input m H = 120 GeV + PYTHIA) ee  ZZ Fit result: We have been (and will be) working on roles of IT in terms of physics...

7 Z (cm)R (cm) Layer 12014 Layer 23517 Layer 35025 Layer 46532 Layer 59032 Layer 611532 Layer 714032 CAD drawing by S.K.Park/H. Park (Tesla-like version) Endcap

8 Silicon sensor Double side vs single side sensor Characterization of sensor and S/N DC vs AC type Pixel for the endcap near beampipe region? Radiation damage Cost issue Above issue should be cleared by R&D and simulation

9 512ch 50  m pitch 1x1cm 2 PIN diode 64ch 50  m pitch 16ch 50  m pitch Rear-side of SSD Pixel Array For SDD R&D 32ch 50  m pitch N-side Design

10 S/N of DSSD 32ch pattern Signal mean = 504.3 Pedestal mean = 108.6 Pedestal sigma = 15.9 S/N = 24.9

11 Korea Cancer Center Hospital : 35MeV proton cyclotron Radiation Hardness Test

12 Electronics & support structure PreAmp (+shaping and holder with VA) Hibrid board (control +HV) FADC Long ladder issue (S/N ) Material budget (multiple scattering) Above issues should be cleared by R&D

13 Hybrid Board Design HV Pad

14 Status of Hybrid Board Hybrid board was powered up (July 2) hybrid board control board (spartan3) HV/level shift/LV generator VA

15 Results on S/N Collaboration Paris-Prague New 20 L=28cm, S/N(MPV)=20 or S/N(Mean)=30 L=56cm, S/N(MPV)=12 or S/N(Mean)=18 Cluster size~2 Noise vs capa Next steps: Change detector & FE prototypes go to test beam

16 Two designs SCIPP-UCSC: Double-comparator discrimination system  Improve spatial resolution (25%) Next foundry: May 9. LPNHE-Paris: Analogue sampling+A/D, including sparsification on sums of 3 adjacent strips. Deep sub micron CMOS techno. First chip successfully submitted and now under test Next version: in progress


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