1. Presenter Name Facility Name Ultra Thin CCD detectors for particle physics experiments.

2. Presenter Name Facility Name Fabrication of SU8 spacers

3. Presenter Name Facility Name 20um 700um Silicon-on-Insulator wafer

4. Presenter Name Facility Name 20um 700um Wet etch device layer. ( 4 off 125mm x 25mm x 20um & 2 off 100mm x 15mm x 20um) 150mm diameter SOI wafers.

5. Presenter Name Facility Name Silicon 20um 700um Coat 500um of SU8 across the wafer. 600um SU8

6. Presenter Name Facility Name 20um 700um Expose SU8 to Ultra-violet radiation and develop. Resultant structures will be based on an open honeycomb structures for the 125mm devices 500um 11mm 1mm 20,30,40,50um three pointed stars. Where each point is 100um long

7. Presenter Name Facility Name 20um 700um 500um Silicon wafer Spin coated SU8, which is not cured before stamping on to the SU8 pillars.

8. Presenter Name Facility Name Wafer scale definition of 20um thick, large area CCD devices.

9. Presenter Name Facility Name 20um 700um Silicon-on-Insulator wafer

10. Presenter Name Facility Name 20um 700um Wet etch device layer. ( 4 off 125mm x 25mm x 20um & 2 off 100mm x 15mm x 20um) 150mm diameter SOI wafers.

11. Presenter Name Facility Name Alignment Jig for 150mm diameter wafers

12. Presenter Name Facility Name Coat edges of wafer assembly with Wax Ws.

13. Presenter Name Facility Name Etch in 45% KOH to remove exposed silicon

14. Presenter Name Facility Name Etch in HF to remove the buried oxide.

15. Presenter Name Facility Name Etch in Xylene to dissolve the wax.