1. III-V MOSFETs: Scaling Laws, Scaling Limits,Fabrication Processes A. D. Carter, G. J. Burek, M. A. Wistey*, B. J. Thibeault, A. Baraskar, U. Singisetti, J. Cagnon, S. Stemmer, A. C. Gossard, C. Palmstrøm University of California, Santa Barbara *Now at Notre Dame B. Shin, E. Kim, P. C. McIntyre Stanford University Y.-J. Lee Intel B. Yue, L. Wang, P. Asbeck, Y. Taur University of California, San Diego 2010 Conference on Indium Phosphide and Related Materials, June 2-4, Takamatsu, Japan Mark. Rodwell, University of California, Santa Barbara

2. III-V MOSFETs for VLSI: Why and Why Not. Lower mass → Higher Carrier Velocity→ lower input capacitance improved gate delay in transistor-capacitance-limited gates not relevant in wiring-capacitance-limited gates (i.e. most of VLSI) But this advantage is widely misunderstood in community InGaAs channels→ higher I d / W g than Si only for thick dielectrics....LOWER I d / W g than Si for thin dielectrics break-even point is at ~0.5 nm EOT More importantly: potential for higher drive current improved gate delay in wiring-capacitance-limited gates (VLSI) We will introduce later candidate III-V channel designs providing higher I d / W g than Si even for small EOT

3. 10nm gate length, < 10nm electrode spacings, < 10nm contact widths III-V MOS: What is needed ? True MOS device structures at ~10 nm gate lengths Drive currents >> 1 mA/micron @ 1/2-Volt V dd. Dielectrics: < 0.6 nm EOT, D it < 10 12 /cm 2 -eV...and the channel must be grown on Silicon Low access resistances. Density-of-states limits. Low dielectric D it must survive FET process. impacts I on, I off,... < 3 nm channel, < 1 nm gate-channel separation, < 3nm deep junctions Fully self-aligned processes: N+ S/D, S/D contacts

4. Highly Scaled FET Process Flows

5. Requirements: 10 nm L g III-V MOSFET Self-aligned S/D contacts low resistance in ~10 nm width, < 0.5  -  m 2 resistivity needed. Self-aligned N+ source/drain shallow, heavily-doped aligned within nm of gate Thin oxide < 1 nm EOT Thin channel < 5nm Shallow channel: no setbacks LgLg L S/D IBM High-k Metal gate transistor Image Source: EE Times

6. InGaAs MOSFET with N+ Source/Drain by MEE Regrowth 1 1 Singisetti, ISCS 2008 2 Wistey, EMC 2008 3 Baraskar, EMC 2009 Interface HAADF-STEM 1* 2 nm InGaAs regrowth Self-aligned source/drain defined by MBE regrowth 2 Self-aligned in-situ Mo contacts 3 Process flow & dimensions selected for 10-30 nm L g design; Gate-first gate dielectric formed after MBE growth uncontaminated / undamaged surface * TEM by J. Cagnon, Susanne Stemmer Group, UCSB

7. Process flow* * Singisetti et al, 2008 ISCS, September, Frieburg Singisetti et al ; Physica Status Solidi C, vol. 6, pp. 1394,2009

8. SiO2 W Cr FIB Cross-section Damage free channel Process scalable to ~10 nm gate lengths Key challenge in S/D process: gate stack etch Requirement: avoid damaging semiconductor surface: Approach: Gate stack with multiple selective etches * * Singisetti et al ; Physica Status Solidi C, vol. 6, pp. 1394,2009

9. MBE Regrowth→ Gap Near Gate→ Source Resistance W / Cr / SiO 2 gate SEM Shadowing by gate: No regrowth next to gate Gap region is depleted of electrons High source resistance because of electron depletion in the gap MBE growth by Dr. Mark Wistey, device fabrication and characterization by U. Singisetti W/Cr gate Mo+InGaAs Ti/Au Pad Gap in regrowth SiO 2 cap

10. Migration Enhanced Epitaxial (MEE) S/D Regrowth* *Wistey, EMC 2008 Wistey, ICMBE 2008 High T migration enhanced Epitaxial (MEE) regrowth* regrowth interface gate No Gap 45 o tilt SEM Top of SiO 2 gate No Gap Side of gate High temperature migration enhanced epitaxial regrowth MBE growth by Dr. Mark Wistey, device fabrication and characterization by U. Singisetti

11. SiO 2 W Cr InGaAs InAlAs Regrowth profile dependence on As flux* Uniform filling with lower As flux multiple InGaAs regrowths with InAlAs marker layers increasing As flux regrowth surface * Wistey et al, EMC 2009 Wistey et al NAMBE 2009 MBE growth by Dr. Mark Wistey, device fabrication and characterization by U. Singisetti uniform filling 5.6x10 -7, 1.0x10 -6, 2x10 -6, 5x10 -6 Torr 540 °C growth

12. InAs source/drain regrowth 1 Wistey et al, EMC 2009 Wistey et al NAMBE 2009. 2 Bhargava et al, APL 1997 InAs regrowth Gate side of gate top of gate Mo S/D metal with N+ InAs underneath Improved InAs regrowth with low As flux for uniform filling 1 InAs less susceptible to electron depletion: Fermi pinning above E c 2

13. In-Situ Refractory Ohmics on MBE Regrown N-InGaAs In-situ Mo on n-InAs In-situ Mo on n-InGaAs ρ c = 0.6 ± 0.4 Ω·µm 2 n = 1×10 20 cm -3 ρ c = 1.0 ± 0.6 Ω·µm 2 n = 5×10 19 cm -3 Interface HAADF-STEM * 2 nm InGaAs regrowth TEM by Dr. J. Cagnon, Stemmer Group, UCSB A. Baraskar Contact resistivity to MEE regrown material is ~1.2  -  m 2.

14. Self-Aligned Contacts: Height Selective Etching* Mo InGaAs PR * Burek et al, J. Cryst. Growth 2009 Dummy gate No regrowth

15. Fully Self-Aligned III-V MOSFET Process

16. Drive current and transconductance 0.95 mA/  m peak I d, ~0.45 mS/  m peak g m

17. 27 nm Self-Aligned Process Flow Self-aligned structures at ~10 nm gate length can be fabricated MEE regrowth has very narrow process window→ CBE or MOCVD ?

18. III-V FET Scaling & High-Current-Density Channels

19. laws in constant-voltage limit: FET Scaling Laws FET parameterchange gate lengthdecrease 2:1 current density (mA/  m), g m (mS/  m) increase 2:1 channel 2DEG electron densityincrease 2:1 electron mass in transport directionconstant gate-channel capacitance densityincrease 2:1 dielectric equivalent thicknessdecrease 2:1 channel thicknessdecrease 2:1 channel density of statesincrease 2:1 source & drain contact resistivitiesdecrease 4:1 Current densities should double Charge densities must double Changes required to double device / circuit bandwidth.

20. Semiconductor Capacitances Must Also Scale

21. Calculating Current: Ballistic Limit Do we get highest current with high or low mass ?

22. Standard InGaAs MOSFETs have superior I d to Si at large EOT. Standard InGaAs MOSFETs have inferior I d to Si at small EOT. Drive Current Versus Mass, # Valleys, and EOT Solomon / Laux Density-of-States-Blottleneck → III-V loses to Si.

23. III-V Band Properties, normal {100} Wafer

24. Consider Instead: Valleys in {111} Wafer

25. Valley in {111} Wafer: with Quantization in thin wells

26. {111}  -L FET: Candidate Channel Materials

27. Standard Approach  valleys in [100] orientation 3 nm GaAs well AlSb barriers Relative Energies:  =0 eV L=177 meV X[100]= 264 meV X[010] = 337 meV

28. First Approach: Use both  and L valleys in [111] 2.3 nm GaAs well AlSb barriers [111] orientation Relative Energies:  = 41 meV L[111] (1)= 0 meV L[111] (2)= 84 meV L[11-1] =175 meV X=288 meV

29. Combined  -L wells in {111} orientation vs. Si GaAs MOSFET with combined  and L transport, 2 nm well→ g=2, m*/m 0 =0.07 GaSb MOSFET with combined  and L transport, ~4 nm well→ m  */m 0 =0.039, m L */m 0 =0.1 combined (  -L) transport

30. 2nd Approach: Use L valleys in Stacked Wells Three 0.66 nm GaAs wells 0.66 nm AlSb barriers [111] orientation Relative Energies:  =338 meV L[111](1) = 0 meV L[111](2)= 61 meV L[111](3)= 99 meV L[11-1] =232 meV X=284 meV

31. Conclusion

32. III-V MOS With appropriate design, III-V channels can provide > current than Si...even for highly scaled devices But present III-V device structures are also unsuitable for 10 nm MOS large access regions, low current densities, deep junctions Raised S/D regrowth process is a path towards a nm VLSI III-V device Gate dielectric still requires major progress...

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