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ATMEL ATF280E Rad Hard SRAM Based FPGA SEE test results Application oriented SEU Sensitiveness Bernard BANCELIN ATMEL Nantes SAS, Aerospace Business Unit.

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Presentation on theme: "ATMEL ATF280E Rad Hard SRAM Based FPGA SEE test results Application oriented SEU Sensitiveness Bernard BANCELIN ATMEL Nantes SAS, Aerospace Business Unit."— Presentation transcript:

1 ATMEL ATF280E Rad Hard SRAM Based FPGA SEE test results Application oriented SEU Sensitiveness Bernard BANCELIN ATMEL Nantes SAS, Aerospace Business Unit

2 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 2 Overview Atmel FPGA Key Points and Architecture ATF280E Radiation Test Results Application oriented SEU sensitiveness

3 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 3 Overview Atmel FPGA Key Points and Architecture ATF280E Radiation Test Results Application oriented SEU sensitiveness

4 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 4 ATF280E Block-Diagram FPGA Core 120 x 120 core-cells 30 x 30 FreeRAMs Config. SRAM Boundary Scan Controller LVDS Interface 8 Rx / 8 Tx User I/O Configuration Self Integrity Checker Config. Control POR Configuration Load Checker Differential Clocks 8 Global / 4 Fast

5 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 5 FPGA Architecture Overview CGK1-CGK8 FCK1-2 Sector Clock Mux Column Clock Mux

6 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 6 Atmel Radiation Hardened FPGAs Layout rules  Improved to avoid multiple nodes charge collection during a single heavy ion impact SEU hardened Memory points  Core cell Flip-Flops, embedded memory, configuration memory based on radiation hardened Flip-Flops Controller protected by classical TMR  Including combinatorial logic and flip-flop of all states machines FreeRAM address decoders, clock and reset trees  Protected by DMR (resistive isolation path based on N and P isolated path carrying the same signal) Your Design is radiation Hardened by construction  No need for SEU/SET mitigation

7 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 7 Hardened Flip-flop and Isolation Path

8 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 8 Overview Atmel FPGA Key Points and Architecture ATF280E Radiation Test Results Application oriented SEU sensitiveness

9 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 9 ATC18RHA Radiation Performances ATF280 and AT697F (100MHz Leon2FT) use the same ASIC technology  ATC18RHA, 0.18µm technology  TID tested up to 300 Krad without parameters drift  No SEL up to 70 MeV.cm²/mg@125°C  SEU: -ATC18RHA SEU hardened DFF: LET threshold of 30 MeV/mg/cm2) -Genesys memory synthesizer: LET threshold of 25 MeV/mg/cm2), -very good SEU hardening results obtained for the compiled memories when used with error correction code (very low saturated cross section), resulting into a bit error rate improved by a factor > 1000 in GEO orbit. -sensitivity of the standard DFF to SEU (LET threshold of 2 MeV/mg/cm2). -very low SEU sensitivity of the ATC18RHA PLL. -for small memory blocks, the interest of using the SEU hardened synthesized memories rather than the compiled memories, even with Error Correction Code (error rate per bit improved by a factor > 100).

10 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 10 Test Principles Functionality and Immunity Test configurations  Reset : configuration memory reset to low level (‘0’).  Multiplier: configuration memory set to high level (‘1’).  Shift register: core cell flip-flops and clock tree to upset.  Inverted shift register: core cell flip-flops and clock tree to upset as the combinatorial path to transients.  And chain: combinatorial path to transients.  Free RAM: integrated FreeRAM block tested as 4K words of 16 Bits dual-port RAM.  Free RAM with EDAC: integrated FreeRAM block tested as 4K words of 16 Bits dual-port RAM with an “Error Detector and Correction” EDAC system. Test conditions  Configuration clock frequency 1MHz  IOs supply in the range 3V to 3.6V, nominal 3.3V  Core voltage in the range 1.65V to 1.95V, nominal 1.8V  Package temperature control for Latch-Up sensitivity Test operator and location  Test is run by HIREX (France)  Test locations: -UCL Louvain, Belgium -BNL Berkeley, USA -RADEF Jyvaskyla, Finland

11 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 11 Test Results Single Event Latch-up  No SEL detected over all the runs performed and in particular with the runs performed at 1.95V core voltage and 3.6V I/O buffer at LBNL with Xenon and 45 deg tilting angle that corresponds to a LET of 76 MeV/(mg/cm²) and a device under test (DUT) temperature of 125°C, up to fluence of 1.10+7 part/cm². Cross section  The configuration SEU error cross section per device versus effective LET is derived from the tests performed in UCL, BNL and RADEF. -Configuration memory SEU saturated cross-section better than 5.10-3 per device (3.10-9 cm² per bit) with a LET threshold around 30MeV at Vcc min. -No SET was recorded with a LET of 43 MeV/(mg/cm²). -SET error cross-section per device about 1.6 10-4 at 60MeV/(mg/cm²). -FreeRAM Asymptotic SEU error cross-section per bit about 6.5 10-8 cm². Test operator and location  Test is run by HIREX (France)  Test locations: -UCL Louvain, Belgium -BNL Berkeley, USA -RADEF Jyvaskyla, Finland

12 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 12 SEU sensitivity of ATF280E configuration bits

13 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 13 SEU sensitivity of ATF280E configuration bits

14 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 14 Calculated error rate for different orbits OrbitInclinationPerigeeApogeeError RateMTBF (Deg)kms device/dayyears GEO035786 1.87E-031.4 LEO ISS51.5400 1.84E-0414.8 MEO63.41000267682.24E-031.22

15 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 15 Overview Atmel FPGA Key Points and Architecture ATF280E Radiation Test Results Application oriented SEU sensitiveness

16 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 16 Principle  Applications in RHBD SRAM-based FPGAs uses only part of the available resources  Device reliability gives the worst case considering that all resources are used  Application oriented sensitiveness analysis tools identify sensitive configuration memory bits and user RAM bits  Estimated critical configuration bits will give an application cross-section giving a more realistic result

17 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 17 Methodology  Extract programmed configuration bits in the application  Design structure and device architecture generation  Configuration bits analysis: -Bits once upset change the function of the used resources -Bits once upset propagate an output connected to external resources

18 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 18 Methodology  Logic cells / Bus repeaters  Critical internal / Critical external  Architecture elements: -Set -Out -LUT -Common path -Root  Configuration bits analysis: -Bits once upset change the function of the used resources -Bits once upset propagate an output connected to external resources

19 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 19 Preliminary Results  Logic cells / Bus repeaters  Critical internal / Critical external  Architecture elements: -Set -Out -LUT -Common path -Root  Configuration bits analysis: -Bits once upset change the function of the used resources -Bits once upset propagate an output connected to external resources Circuit Programmed Bits [%] Resource Usage [%] Weighted Sensitiveness [%] B010.010.070.05 B030.070.330.20 B040.201.160.80 B080.100.480.31 B110.170.770.60 B120.482.611.62 B142.0312.777.78 B08_chain2.4011.587.46

20 MAPLD 2009 / FPGAs for Space Aug 13, 2009 Bernard BANCELIN ATMEL 20 Conclusion Application Oriented SEU sensitiveness  Future works: -Fault injection platform for adding a dynamic analysis  Work done in collaboration with ESA and Politechnico di Torino (Italy) RHBD FPGA  ATF280 -samples already available and designs on going -Improvement of power-on current (maximum in worst case conditions 1A during 10µs)  ATFS450 development on going, using 150nm SOI process  New architecture for 2.5Mgates RHBD SRAM based FPGA for 2012, 65nm process


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