1. www.tyndall.ie Innovation in Ireland – the researcher perspective simon.elliott@tyndall.ie Destination Europe, San Francisco, 2012 Ireland Workshop Simon D. Elliott

2. www.tyndall.ie Introducing Tyndall National Institute John Tyndall,1820-1893 Irelands centre of excellence in research into Information and Communications Technologies: named after the Irish-born scientist; located in Cork, part of University College Cork;

3. www.tyndall.ie Introducing Tyndall National Institute Irelands centre of excellence in research into Information and Communications Technologies: named after the Irish-born scientist; located in Cork, part of University College Cork; strategic value to Ireland – providing facilities for Universities and technology transfer to industry; strong record in postgraduate education.

4. www.tyndall.ie Introducing Tyndall National Institute In numbers: >400 staff of whom ~100 are PhD students; 28 industry researchers-in-residence; 200 peer-reviewed publications (2010); 8 patent applications, 9 patent licences; 9 start-ups based on Tyndall technology; 17,000 sq ft clean room space.

5. www.tyndall.ie Nanofabrication: ultra-thin films R. Feynman, Theres plenty of room at the bottom (1959): What could we do with layered structures with just the right layers? What would the properties of materials be if we could really arrange the atoms the way we want them? … When we have some control of the arrangement of things on a small scale we will get an enormously greater range of possible properties that substances can have, and of different things that we can do. Atomic layer deposition (ALD) has emerged as the processing technology of choice for high-quality films in demanding nanoscale geometries. R. Feynman, 29 Dec 1959, Annual Meeting of the American Physical Society at the California Institute of Technology; © Engineering and Science, Caltech; see http://www.zyvex.com/nanotech/feynman.html.

6. www.tyndall.ie Nanofabrication: ultra-thin films http://www.youtube.com/watch?v=HUsOMnV65jk

7. www.tyndall.ie My recent projects TopicIndustry partners EURare earth oxide thin filmsSAFC, ASM, NXP, Numonyx EUCharge trapping layers for flash memory Numonyx EUHigh permittivity films for super- capacitors Analog Devices, ASM, SAFC, Air Liquide, Infineon etc. EUMetallic films for X-ray lensing IEDeposition of organic thin filmsHenkel IEFunctional oxides for electronics (FORME) Intel, Applied Materials, SAFC Hitech etc. IEProcess design for ALD of copperIntel

8. www.tyndall.ie My recent projects TopicIndustry partners EURare earth oxide thin filmsSAFC, ASM, NXP, Numonyx EUCharge trapping layers for flash memory Numonyx EUHigh permittivity films for super- capacitors Analog Devices, ASM, SAFC, Air Liquide, Infineon etc. EUMetallic films for X-ray lensing IEDeposition of organic thin filmsHenkel IEFunctional oxides for electronics (FORME) Intel, Applied Materials, SAFC Hitech etc. IEProcess design for ALD of copperIntel

9. www.tyndall.ie Strategic research cluster Functional oxides and related materials for electronics ChemistryDepositionDevices

10. www.tyndall.ie Strategic research cluster Functional oxides and related materials for electronics ChemistryDepositionDevices Otway, Gunko, Elliott Precursor synthesisQuantum chemistry

11. www.tyndall.ie Strategic research cluster Functional oxides and related materials for electronics ChemistryDepositionDevices Pemble, Povey, Hughes, Holmes, Morris, McGlynn, Pelucchi ALD reactor X-ray photoelectron spectroscopy

12. www.tyndall.ie Strategic research cluster Functional oxides and related materials for electronics ChemistryDepositionDevices Hurley, Whatmore, Redmond, Quinn, Roy MOSFET fabrication Electrical C-V

13. www.tyndall.ie Modelling interface structure Computed structure of HfSiO 4 /Ge interface computed by first principles DFT, with spontaneous generation of defective 3-coordinate Ge (highlighted as ball); green=Ge, red=O, blue=Hf, yellow=Si. high-permittivity insulator (HfSiO 4 ) high mobility substrate (Ge)

14. www.tyndall.ie Modelling deposition onto substrate S. Klejna O As Surface model for oxidised III-V semiconductor purple=As, red=O

15. www.tyndall.ie Modelling deposition onto substrate S. Klejna Adsorption of Al(CH 3 ) 3 Graphical representation of optimised geometries (GGA-PW91, USPP, VASP program). purple=As, red=O, blue=Al, grey=C, white=H

16. www.tyndall.ie Modelling deposition onto substrate S. Klejna Transfer of ligands from Al to As

17. www.tyndall.ie Modelling deposition onto substrate S. Klejna Transfer of ligands from Al to O and of electrons from C to As 2e Electron transfer confirmed using Bader population analysis.

18. www.tyndall.ie Modelling deposition onto substrate S. Klejna Proton transfer

19. www.tyndall.ie purple=As, red=O, blue=Al, grey=C, white=H Desorption of volatile species C2H4C2H4 AsMe 3 Modelling deposition onto substrate S. Klejna

20. www.tyndall.ie Modelling deposition onto substrate S. Klejna Desorption of volatile species

21. www.tyndall.ie Modelling growth over ALD cycles M. Shirazi 5 cycles of Hf(N(CH 3 ) 2 ) 4 +H 2 O ALD, T=500 K, p=0.26 Torr, t pulse =t purge =0.1 s red=O, blue=N, large grey=Hf, small grey=C, white=H

22. www.tyndall.ie Value to Tyndall of industry collaboration Working on real-life, relevant problems specified by industry; Valuable new ideas from interacting with researchers in top global companies; Students obtain insight into industry needs and R&D culture; Potential for research to have high impact; Reinforces industrial R&D in Ireland.