1. Summary of CMS 3D pixel sensors R&D Enver Alagoz 1 On behalf of CMS 3D collaboration 1 Physics Department, Purdue University, West Lafayette, IN 47907-2036 US US CMS Meeting, Colorado-Boulder, 18 May 2012

2. 3D vs planar 3D sensor layouts 3D assembly 3D pixel sensors tests – Lab test results – Beam test results Irradiation Post-irradiation tests – Lab test results – Beam test results Summary & outlook Outline 2

3. 3D vs planar ionizing particle 300µm n+ p+ e h depletion p-type p+ n+ 50µm p-type depletion PLANAR: 3D: p+ and n+ electrodes are arrays of columns that penetrate into the bulk Lateral depletion Charge collection is sideways Superior radiation hardness due to smaller electrode spacing: - smaller carrier drift distance - faster charge collection - less carrier trapping - lower depletion voltage Higher noise Complex, non-standard processing 3

4. 3D layouts (200 µm substrate thickness) 4E Configuration n+ (readout) p+ (bias) 100 μm 150 μm 2E Configuration 1E Configuration SINTEF 3D (200 μm thick) CNM 3D (200 μm thick) FBK 3D (200 μm thick) Single-side etching Double-side etching 4

5. Lab test setups Sensors bump bonded to PSI46v2 ROC in SELEX/IZM (In/PbSn bumps) Wire bonded and assembled on FPIX plaquettes/testboards PSI test setup is used to fully calibrate FBK sensors in lab ROC calibration Noise Charge collection with Sr-90 source Purdue lab warm test setup Purdue cold test setup 5

6. 3D Plaquettes/testboards Sensor ROC Bump bonds VHDI Base plate Adhesive Wire bond Bias wire SINTEF 3D FBK 3D CNM 3D 6

7. IV measurements @ 21 °C SINTEF 3D FBK 3D CNM 3D Breakdown voltages: CNM > 100V SINTEF > 100 FBK < 40V 7

8. Noise scans @ 21 °C  Unable to measure noise at V bias < 40V for 4E sensors from SINTEF 3D 4E 2E 1E SINTEF 3D FBK 3D Planar FPIX/BPIX noise ~ 100-150 electrons 3D sensors are noisier 8

9. Charge collection @ 21 °C Sr-90 source: 1 mCi, E β = 0.546 ΜeV Random trigger used Landau convoluted Gaussian fit 1 Vcal = 65 e- MP = 14 ke- SINTEF 3D FBK 3D 9 FBK (200 μm thick)

10. BEAM CONTROL ROOM DUT PIXEL DETECTORS SCINTILLATORS 3.7V POWER SUPPLY ACELLERATOR CLOCK CLOCK AND TRIGGER DISTRIBUTION FNAL testbeam 120 GeV protons No B field Meson Area 10

11. Beam test results Telescope alignment with the Monicelli software developed by Milano Uni. collaboration 11

12. Beam test results Beam spot 93.4% efficiency Unirradiated sensors Beam spot 98.5% efficiency CNM 3D V bias = -15V : 0 o tilt FBK 3D V bias = -15V : 0 o tilt 12

13. Irradiation at the Los Alamos Neutron Science Center (LANSCE) with 800 MeV protons/cm 2 – Fluences: 3.5E14, 0.7E15, and 3.5E15 n eq /cm 2 (FBK) – Fluences: 0.7E15, and 3.5E15 n eq /cm 2 (SINTEF) – Fluences: 1E14, 3E14, 5E14, and 0.7E15 n eq /cm 2 (CNM) Post-irradiation lab (@ Purdue) and beam tests (@ FNAL) performed for SINTEF and FBK 3D sensors – CNM sensors only tested in testbeams All readout chips work after irradiation – Except SINTEF case: 1 out of 6 ROCs worked Post-irradiation lab measurements carried out in the thermal chamber running at -20 °C – sensor temp estimated by an IR camera to be -7 °C Irradiation 13

14. Irradiation: IV tests @ -20 °C SINTEF 3D FBK 3D SINTEF 3D breakdown improved by 15V FBK 3D breakdown improved by less than 10V 14

15. Irradiation: Noise tests @ -20 °C SINTEF 3D FBK 3D SINTEF 3D noise degraded by less than 50 electrons FBK 3D noise degraded by less than 50 electrons 15

16. Irradiation: Charge collection @ -20 °C Signal LOSS in FBK 3D (@ -30V): 1E 43% after 1E15 p/cm 2 (0.7E15 n eq /cm 2 ) 1E 50% after 5E15 p/cm 2 (3.5E15 n eq /cm 2 ) 2E 14% after 1E15 p/cm 2 (0.7E15 n eq /cm 2 ) 4E 14% after 1E15 p/cm 2 (0.7E15 n eq /cm 2 ) SINTEF (200 μm thick) FBK (200 μm thick) Sr-90 source: 1 mCi, E β = 0.546 ΜeV Random trigger used 16

17. Irradiation: Beam test results CNM (@ -80V) FBK (@ -30V) SINTEF (@ -80V) p+ n+ 1E 2E p+ n+ 4E p+ n+ electrodes are less sensitive: observed lower efficiency on electrode regions 17

18. Summary & outlook 3D sensors have several features outperform planar sensors Sensors received from SINTEF (Norway), FBK (Ital), and CNM (Spain)- Lab characterization tests done at Purdue Breakdown voltage: SINTEF > 100V, CNM > 100V, and FBK < 40V 3D sensors have higher noises vs CMS planar sensors Testbeams carried at FNAL All efficiencies are higher than 90% Irradiation performed at Los Alamos (800 MeV protons/cm 2 ) Irradiated fluences are between 1E14 and 3.5x10 15 n eq /cm 2 Signal loss in FBK 3Ds is lower (14%) for sensors with more than 1 electrodes Next: Expecting 3Ds from SINTEF without support wafer Expecting 3Ds with 1E,2E, and 4E configurations from CNM Next irradiation fluences will go up to 1E16 n eq /cm 2 18

19. Czech Technical University, Fermilab, Purdue University, INFN Turin, SINTEF, SLAC, University of Hawaii, University of Manchester 3DC 19

20. BACKUP SLIDES 20

21. Noise tests @ 21 °C Single pixel SCurve 2D noise map Noise distribution Error function fit Gaussian fit Higher noise due to long pixel on the sensor edges Noise measurement of FBK 1E type 3D sensor 21