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Nanotechnology in NEC FRL Jun’ichi Sone Fundamental Research Labs NEC Corporation.

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Presentation on theme: "Nanotechnology in NEC FRL Jun’ichi Sone Fundamental Research Labs NEC Corporation."— Presentation transcript:

1 Nanotechnology in NEC FRL Jun’ichi Sone Fundamental Research Labs NEC Corporation

2 Chemistry Molecular Electronics NEMS Mechanically Strong Material Nanotechnology Quantum Devices Molecular Engineering Atom- Molecular Manipulation Expectation of Nanotechnology Miniaturization of Semiconductor Devices Molecular Engineering Atom Molecular Manipulation DNA-Protein Manipulation Expectation of new technology domain and new market Carbon Nanotube Fuel Cell Nanobio Devices Life science DNA Protein Manipulation Semiconductor miniaturization Electronics Mechanics

3 Nanotechnology Vision 2000 Nanotechnology Basic technology 30nm 50nm Nano Material Characterization 3D Nanostructure Fabrication Size::10nm 5nm Nano Pattern Fabrication 1nm 2010 Fuel Cell 100nm Terabit Memory Quantum bit Devices Quantum Computer Nanotube Electron Devices NEMS Electron Devices Nano-bio Devices Next generation lithography (70 ~ 100nm) Next generation SOC Devices (70 ~ 100nm) Device Physics Roadmap Technology Field Emission Display Semiconductor Breakthrough Devices CNT (carbon nanotube) Interdisciplinary New Devices Atom Switch

4 3. Pursuing of semiconductor miniaturization limit and exploring breakthrough devices Nanofabrication technology Pursuit of miniaturization limit in Si MOSFET operation Quantum bit devices for Q-computing

5 YEAR MPU gate length (nm) Updated version of ITRS2000 1. Roadmap for Si-LSIs Gate length reduction to realize higher Performance in MOSFET Issues Nanofabrication technology Quantum Effect Increase of leakage current due to tunneling current 8nm MOSFET demonstration Leading edge of R & D ~100nm technology(ASUKA Pj) Current development phase

6 The world smallest 10nm pattern using originally developed high-resolution resist. Nanofabrication technology 10nm-width resist pattern exposed by electron beam 4-methyl-1-acetoxy calixarene (MC6AOAc)

7 I-V characteristics (room temperature)SEM image of an 8-nm gate region Exploring miniaturelized Si-MOSFET operation limit Demonstration of 8-nm-gate MOSFET operation

8 Ultra-low power device enabling 1-bit operation by a single electron (5~6 orders of magnitude lower energy consumption compared to MOSFETs) Demonstration of RT operation in single electron devices with islands of sub-10nm Metallic Single Electron Devices -4-2 0 2 4 0.00 0.05 0.10 0.15 V=2 mVT=4.2 K Drain Current (nA) Gate Volatage (V) Schematic view of a single electron device Gate control characteristics Si substrate source drain Al/AlO x /Al tunnel junctions island Gate

9 Quantum Computing 1 0 0> + 1> P= 1 2 1 2 1> 0> Observation Superposition Single quantum bit ? C-Computing Q-Computing 2 N states can be represented by N q-bits (36 billion by N=60) Operation by keeping wave-function nature (Super parallel) Issues: Integration, Long life of quantum bit states

10 Single Cooper-pair Box Gate SQUID Multi-qubit operation, scaling Increase possible # of elementary gate operation (Q > 10 3 ) The first solid state qubit demonstrated (1999 Nishina Award) Riken Project funding (starting October, 2001) The first solid state qubit demonstrated (1999 Nishina Award) Riken Project funding (starting October, 2001) Utilizing quantum mechanical principle to revolutionize the concept of computing Next steps: Possible high-speed computing applications Decoding (factoring), Date search, NP complete problems (?) Quantum bit device 1mm1mm

11 Carbon Nanotube(CNT) New Applications Features of CNT Applications Fuel Cell for Mobile Application Field Emission Display Application

12 2002 Benjamin Franklin Medal to Dr.S.Iijima for the discovery of carbon nanotube and the contribution to the progress of nanotechnology Benjamin Franklin Medal Physics Award January 2002 Carbon nanotube Dr.Sumio Iijima

13 Features of Carbon nanotube Electrical properties Transistor, Wiring,FED MetalSemiconductor  Metalic or Semiconducting conduction depending on chiralities  Appearance of Quantum Effect due to 1-d structure  Highly-Effective Electron Emission Chemical: Adsorption, Storage, Catalysts Chemical modification, Composites Fuel cells Sensors Mechanical: Super strong structure Due to C-C bonds Composite materials

14 Nanotechnology Electron Emission Flat Panel Display Microwave Tube Chemistry Adsorption Material Sensor, Catalyst Electronics Transistor, Sensor, Interconnection, Quantum bit Composite Material Electrical conducting Plastics Reinforced Material Carbon Nanotube Energy Fuel Cell, Gas Storage Lithium Ion Battery, Super Capacitor AFM, STM Manipulation Nanomachine Application of Carbon Nanotube

15 SW Carbon Nanohorn aggregates Single wall carbon nanohorns Single Wall Carbon Nanohorns Iijima, S. et al. Chem. Phys. Lett. 309, 165 (1999).

16 Mobile Fuel Cells using Carbon Nanohorns TEM images of CNH Principle of a Fuel Cell Ultra-High Electrical Energy Capacity 10 times higher than Li battery Nano-structure suitable for supporting catalyst Fuel Cartridge Cell Mobile Fuel Cell CH 3 OHH+ e O 2 CH 3 OHH+ e O 2 CH3OH H+H+ ee eeeeeeee CNH Pt catalyst O2O2 H2OH2O Fuel air Polymer film 20% increase in output electrical energy by using carbon nanohorn CO2

17 Comparison of Fuel Cell Output Nanohorn Convention al carbon material H 2 /O 2 Cell at RT 20% increase of current density by using carbon nanohorn electrodes 0100200300 0 200 400 600 800 1000 RT Furnace black SWNH Cell voltage (mV) Current density (mA/cm 2 )

18 TEM images of Nanohorn with Pt catalyst Carbon nanohorn Conventional carbon material (acetylene black) ※ Black particles : Pt catalyst ・ Finer Pt catalyst is dispersed homogeneously on the surface of carbon nanohorns ・ Finer particles have better catalyst capability

19 Prototype of carbon-nanohorn fuel cell JST, Sansouken, NEC

20 6. Exploring Interdisciplinary New Devices Nanobio devices “Fusion of electronics and biotechnology” NEMS devices “Fusion of electronics and mechanics

21 Schematics of NEMS nanobio devices Nanobio devices High-precision separation : Artificial gel 制御電極 Protein DNA Control electrode DNA

22 2.75  m Nano wineglass made of Diamond-like-Carbon Demonstration of three-dimensional nanostructure fabrication (collaborated with Himeji Inst. Technol. & SII Inc.:Nikkei BP award) 3-D nanostructure fabrication By FIB-CVD Nanobio devices, NEMS(nano-scale electro-mechanical sysytem), Electro-mechanical switches Fabrication of three-dimensional nanostructures Focused-ion-beam chemical-vapor-deposition Nano-coil

23 2.75  m New market, New industry Nanotechnology FIB excited chemical reaction (3-dimensional nanostructure) EB lithography with calix-arene resist (2-dimensional nanopattern) Beam fabrication Top down Bottom up Self assembled organic membrane Fine particle DNA C60 Self assembled Chemical reaction Chemical modification Carbon nanotube (Diameter ~1nm Smoothness in atomic level)


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