1. Huai-Yuan Michael Tseng EE C235

2.  Inorganic semiconductor nanowire field effect transistors (NW-FETs)  Low cost printing process ◦ Large area, flexible electronics ◦ But required sub-10um resolution ◦ Difficult to form ohmic contact when print Si NW   Self-aligned inkjet printing technique   Printing of metal oxide NW (ZnO)

5. cyclohexylbenzene(CHB )

6.  Au lift-off  SAM treatment on Au  Au nanoparticles printed, de-wet  ZnO NW ◦ Chemical vapor deposition on a-plane sapphire substrate ◦ dispersed in IPA/ethylene glycol then inkjet printed  Spin-cast PMMA  Print PEDOT:PSS SAM used = 1H, 1H, 2H,2H-perflourodecanethiol PMMA = polymethyl methacrylate PEDOT:PSS = poly3,4-ethylenedioxithiophene doped with poly-styrene sulfonate

7. L=500nm Improved by heating Without ZnO With ZnO

8.  All solution process ZnO NW FETs were demonstrated, however  Performance limited by contact resistance as can be proved by a longer channel length device (2um)  Could be improved by using lower work function metal nanoparticle or SAM treatment on Au