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Presentation on theme: "LCD TFT LED-OLED CCD CMOS DISPLAY SYSTEMS AND PHOTOSENSORS (PART 2)"— Presentation transcript:


2 2

3 Contents Field effect transistors(FET) Thin film transistors(TFT) Structure Characteristics Modes of operation Some details about TFTs Advantages Organic thin film transistors(OTFT) Materials Processing applications 3

4 Field effect transistors (FET) consist of a piece of semiconductor made into four regions that are referred to as the source, drain, gate, and body (Figure 1). The source and drain components are doped with charge carriers that will provide excess holes (p-doped) or electrons (n-doped) in the semiconductor. Between the source and drain is the body, which is semiconductor that is either non-doped or oppositely doped from the source and drain. Figure 1: Diagram of a planar Field Effect Transitor (FET) with labeled parts. 4 Field Effect Transistors(FET)

5 The gate is placed near the body region, but separated by an electrical insulator, (Often oxides) and may be either a conducting metal or semiconductor oppositely doped from the source and drain. In an n-channel, or npn, FET, applying positive voltage to (a negative voltage in the case of a hole-doped p-channel, or pnp, transistor) to the gate, the gate provides an electric field that causes electrons to be mobile in the body of the transistor, which becomes conductive and even current amplifying. 5 FET configurations

6 Operation gate volt controls the thickness of the channel consider an n -channel device making the gate more positive attracts electrons to the gate and makes the gate region thicker – reducing the resistance of the channel. The channel is said to be enhanced making the gate more negative repels electrons from the gate and makes the gate region thinner – increasing the resistance of the channel. The channel is said to be depleted 6 Effect of varying the gate voltage

7 The Thin Film Transistor (TFT) is a special kind of field-effect transistors that are made by the deposition of thin films of the different materials that make up the transistor. In an a-Si TFT, the conducting carriers are electrons. Electrons drift from the source electrode to the drain, which results in current flow from drain to source. The switching structure is based on the metal– insulator–semiconductor (MIS) structure, which is also used widely in the IC industry with crystalline silicon. In such a structure, the metal can attract and repel carriers at the semiconductor side, which changes the carrier concentration of the semiconductor. It effectively engineers the conductance and hence can be used to switch on and off with high and low conductance, respectively. Although operation modes for crystalline silicon, a-Si and poly-Si are different, the basic physics is similar. 7 Schematic representation of and notation for a TFT. Thin Film Transistors(TFT)

8 Typical TFTs can be categorized as normal or inverted structures, depending on whether their gate is on the top or bottom, respectively. Another classification depends on whether the drain/source and gate are on the same or opposite sides; these are called coplanar or staggered structures, respectively. Hence, there are basically four different kinds of TFT structures. Different structures may be the result of different fabrication procedures and may result in different device performance. Typically, a-Si TFTs use the inverted staggered structure configuration because it makes them easy to fabricate and gives them better electrical characteristics. The a-Si channel is sensitive to photons of the external ambient that mainly illuminates from the bottom side in a display system: an inverted structure can shield the device from this light by virtue of the gate metal. 8 Thin-film transistor characteristics

9 9 Different configurations of TFTs

10 10 Since atoms in the a-Si network exhibit statistical differences in bonding conditions, there are some allowed states extending from the conduction and valence bands, which are called tail states. Due to the imperfect crystalline structure, there are also lots of dangling bonds, which can be viewed as defects, from the viewpoint of crystalline silicon. When silicon atoms form a crystalline structure of the order of several to several tens of nanometers, the silicon is called nanocrystalline silicon (nc-Si), with higher mobility values. On increasing the grain size to the micrometer range, the classifications are called microcrystalline silicon (c-Si) and polycrystalline silicon (poly-Si). The increase of grain size from a-Si to nc-Si and even c-Si can be achieved by optimization of fabrication parameters during thin-film deposition. local heating by laser irradiation makes it possible to form high-quality poly-Si thin film on glass or even plastic substrates.

11 11 One can see that a-Si has a random structure without long-range order. However, one can describe the carrier concentrations at different energies with the concept of density of states, i.e. how many states are allowed at a certain energy level, and then determine the electrical bandgap and optical bandgap of a-Si. The larger and smaller spheres in Figure represent silicon and hydrogen atoms, respectively. Classification of silicon by grain size, together with the mobility values and process conditions Amorphous silicon

12 12 As shown, a-Si can be viewed as a random network connected by covalent bonds without long-range order. Although each silicon atom is still fourfold coordinated, the bonding length and angle are different, which results in the extension of the density of states inside the forbidden gap. However, in a-Si material, electrons are confined within a grain, which is called the localized state, and can hop to other grains when they obtain enough kinetic energy, which is called the extended state. Three-dimensional structure of a-Si:H Amorphous silicon Density of states of a-Si:H.

13 13 PECVD is a common technique for producing a-Si:H thin film, at low temperature, of high quality and large area. Figure shows schematically a PECVD system. Here, SiH4 is used as the source for silicon deposition. Hydrogen gas is added to further passivate the dangling bonds of the silicon. Plasma generated by radiofrequency (rf) power decomposes the SiH4 into Si and H radical ions, which then deposit on the substrate. The standard substrate temperature is about 250 C which allows the radical atoms to migrate and form chemical bonds. To obtain high-quality a-Si:H with high throughput at a certain temperature limited by a glass ( <600 C) or flexible (<200 C) substrate, fabrication parameters such as flow rate, rf power, chamber pressure, substrate temperature, SiH4/H2 ratio and gas source (NH3, SiCl2H2, Si2H6, etc.) should be taken into consideration and optimized. Also, under some process conditions, such as smaller SiH4/H2 ratio, higher plasma power density and thicker thin film, one tends to obtain nc-Si or even c-Si, rather than a- Si. Schematic of a PECVD system Deposition of thin film

14 The substrate most often used in the creation of a TFT is glass. This is because glass has several important properties. Glass has a very low transmission of liquid water and water vapor while still being transparent, which prevents damage to the device chemically in addition to physical protection. Glass also is a good insulator so electrical devices placed upon it will not leak current by conduction. Glass substrates are typically created through the formation of a continuous, high purity SiO2 sheet upon a flat, non-stick surface. 14 substrate

15 Figure shows a cross-section of an a-Si TFT fabricated on a glass substrate. The gate electrode is deposited first, which is typically chromium, tantalum or aluminum. An insulating layer is then formed uniformly (using PECVD) covering the gate electrode, which can be silicon nitride (SiN x) or silicon oxide (SiO x ). Then, a-Si is deposited on the top of the insulator as an MIS structure. On the right and left of the a-Si layer, source and drain electrodes are then formed, which typically consist of multiple layers, i.e. heavily doped n-type a-Si (n+ a-Si) followed by chromium/aluminum, and n+ a-Si forms an ohmic contact with the channel layer (a- Si) for better electron injection. The gate voltage affects the channel conductance and controls the on/off switching of this conductance. 15 Cross-section of an a-Si TFT Construction of a-si TFT

16 The gate voltage affects the channel conductance and controls the on/off switching of this conductance. Current through drain to source ( ID) is modulated by the gate, which is also dependent on the drain voltage ( VD). Typically, the source is grounded ( Vs =0). The I–V characteristics of an a-Si TFT can be described by the following equations, which are similar to those for crystalline silicon devices: Figure shows typical electrical characteristics of an a-Si TFT with channel width and length of 200 and 27 m, respectively. Figure (a) shows the ID–VD curves for different VG values, which are typically called output characteristic curves. For a positive and sufficiently large VG, there are mobile electrons which make the channel conductive. Then, with increasing VD, ID continues increasing until VD =VG VT, which is called the linear region. Since the channel region is somewhat like a resistance, it is reasonable that higher VD results in higher current. On further increasing the voltage, the channel cannot support a higher current density, leading to a saturation region. 16 Electrical characteristics

17 The saturation current increases with increasing gate voltage since it attracts more electrons accumulating at the insulator–semiconductor interface. Figure (b) shows the log( ID)VG curves at VD =0.1 and 10 V, which are also called the transfer characteristic curves. When VD=10V, one can see that, with increasingVG, ID is very low (about 1012 A) below the VG <1V range, sharply increases at 0 to 5 V (from 1012 to 106 A) and saturates at about 105 A. 17 (a) Output characteristic, (b) transfer characteristic and (c) ID versus VG at a small VD value of an a-Si TFT. Characteristic curves

18 From the transfer characteristic, one can obtain the on/off ratio of a TFT, which is the ratio of the maximum to minimum measurable current. Typically, values of 106 to 108 are achievable for an a-Si TFT. A higher on/off ratio is preferred since a higher oncurrent can provide better driving capability and lower off current means lower leakage current. As is evident from Equations (3.17) and (3.18), increasing the mobility value effectively helps to improve the on current, such as is achieved by using poly-Si rather than a-Si. However, due to the increase of the grain size, the surface roughness of poly-Si is greater than that of a-Si, which also increases the off current. Hence, one may not achieve a higher on/off ratio when using poly-Si rather than a-Si, although poly-Si exhibits a higher carrier mobility. To quantitatively determine the VT value, it is easier to plot the ID–VG curve using a linear scale. Figure (c) shows the ID–VG curve for a small value of VD of 0.1 V in the low ID region. Here, the TFT operates in the linear region due to the small VD value. Previous equations can be written approximately as 18 On/off ratio

19 and we can assume that the V D term in this equation is very small and can be neglected. We can find VT from the x-intercept since ID = 0 at VG = VT; this is the voltage required to switch on this TFT. Once VT is obtained, one can fit the mobility value for such a device from these Equations. Above VT, there would be a significant current passing through the channel. subthreshold swing, from Figure (b), is the inverse of the slope of log( ID) versus VG, in terms of V/decade. This parameter indicates how much voltage is needed to switch the TFT on and off. A smaller subthreshold swing is preferred since this results in higher speed and lower power consumption 19

20 Non-silicon-based thin-film transistors this section, will introduce two kinds of TFTs where the active layer consists of organic molecules and ZnO-based materials. Organic TFT (OTFT) can be fabricated with a low temperature deposition and a solution process, which is less complex compared with conventional Si-based technologies. In addition, due to the mechanical flexibility of organic material, OTFT can be used as the backbone of the flexible display, and this has the benefit of being rugged, thin and lightweight. Also, it is potentially of low cost due to the possibility of using the roll-to-roll process. When fabricating a flexible display on a plastic rather than a glass substrate, one important issue arises concerning the durability of the substrate. 20

21 chemical structure of some common organic semiconductors are showed below. Intrinsically, organic materials are ambipolar which means that they can conduct both holes and electrons. Extrinsically, however, electron conduction is often several orders of magnitude smaller: first of all, injection of electrons from a contact into organic materials is more problematic than hole injection. Second, electron-rich molecules and organic anions are very sensitive to oxidation by water or oxygen and the resulting oxidized molecules have a strong tendency to trap electrons which effectively lowers electron mobility. In practice, it is very difficult to exclude water and oxygen and therefore organic molecules are sometimes substituted with electron- withdrawing groups like fluor to make them more oxidation-resistant which often yields higher extrinsic electron mobilities. Pentacene is one of the most popular and promising small molecule-semiconductors with reported p-type room-temperature mobilities typically around 100 cm2/Vs. 21 materials

22 22 P-type organic semiconductor materials

23 23 n-type organic semiconductor materials

24 24

25 For practical applications, organic semiconductors are typically used as thin films ranging from a few nanometers to a few micrometers thick. To deposit such thin films, several methods can be used depending on the organic materials properties, cost, tolerances, substrate type etc. For polymers, deposition typically occurs from solution phase which of course requires the polymer to be soluble. The polymer solution in a volatile solvent is dispensed on a substrate surface. When the solvent evaporates, it leaves behind a coating of the polymer. The resulting polymer film is amorphous or semicrystalline depending on the processing conditions. The simplest methods, are: · solution casting (where the solution is simply poured on a substrate, A), · inkjet printing (where small drops of solution are ejected in a patterned way on a substrate, B), · aerosol spray (where a mist of droplets is homogenuously sprayed on a substrate, C), · doctor blading (where a blade scrapes the solution over a substrate, D), · screen printing (where the solution is pressed through a screen onto a substrate, E), · dip coating (where a substrate is dipped in the polymer solution, F), · spin coating (where the solution is spun on a rotating substrate, G). 25 Processing

26 Schematical depiction of the various methods for obtaining thin films by solution processing. 26

27 27 Optical microscopic image of the 100 ppi organic thin-film transistor array fabricated entirely by printing process (pixel size: 254 μm). Organic thin-film transistor array fabricated entirely by printing process on a flexible plastic film

28 The availability of organic semiconductors allows the construction of organic electronic devices analogous to classic devices such as transistors, solar cells and (light-emitting) diodes and gave rise to the field of organic or plastic electronics. Due to their relatively low performance, they are no competition for classic, inorganic semiconductors in high performance applications but they can maybe bring electronics to areas where silicon can not. Thanks to their relative ease of fabrication and deposition and their compatibility with printing techniques and low-cost, flexible substrates, they could be used for flexible, large area and potentially low-cost applications includes: Sensors Electronic papers memory devices including radio frequency identification cards (RFIDs) 28 Applications

29 29 Sony Corporation (Sony) announced that it developed a super-flexible 80 μm-thick 4.1-in 121 ppi OTFT*1-driven full color OLED display which can be wrapped around a thin cylinder. To create the display, Sony developed OTFTs with an original organic semiconductor material (a PXX derivative) with eight times*2 the current modulation of conventional OTFTs. OLED

30 30 Sony will continue to improve the performance and reliability of its flexible organic displays because the application of these developments are expected to yield thin, light-weight, durable and mobile devices with enhanced form- factor. Technology Features 1.High performance OTFT with originally developed high-mobility and highly- stable organic semiconductor materials, PXX derivatives. Sony has developed organic semiconductor material which is stable under exposure to oxygen, moisture, light and heat and improved current modulation of eight-times*2 that of conventional OTFT with organic semiconductor of pentacene. Improvement of this OTFT achieved the worlds highest-resolution OTFT-driven OLED display with resolution of 121 ppi and 432 x 240 x RGB (FWQVGA) pixels*4. 2. Integration of a flexible gate-driver circuit with OTFTs This is the worlds first demonstration*3 of an OLED display with an integrated gate-driver circuit with OTFTs. 3. Enhancement of flexibility with all organic insulators in the OTFT and OLED integration circuit In order to enhance flexibility of the display, Sony has developed organic insulators for all the insulators in the OTFT and OLED integration circuit. OLED

31 31 4. Achieved display capable of reproducing moving images while rolled-up around cylinder with 4mm radius. Even after 1000 cycles of repeatedly rolling-up and stretching the display, there was no clear degradation in the displays ability to reproduce moving images. Specification of the OTFT organic semiconductor: peri-Xanthenoxanthene(PXX) derivative hole mobility: 0.4 cm2/Vs current on/off ratio: 106 channel length: 5μm threshold voltage: -5V Specification of the rollable OTFT-driven OLED display size of a panel: 4.1 inch wide number of pixels: 432 x 240 x RGB pixels size of a pixel: 210μm x 210μm resolution: 121 ppi (pixels per inch) number of colors: 16,777,216 peak luminance: >100 cd/m2 contrast ratio: >1000:1 minimum bending radius: 4 mm driving scheme: 2T-1C voltage programming with OTFTs thickness of a panel: 80μm OLED

32 There is two common device configurations. Both are of the inverted structure type, since the insulator must be formed before the organic thin film. For a bottom contact device, the organic layer is deposited at the top of the device. Drain, source, gate and insulators can be defined by conventional photolithography which provides a high resolution (less than 1 m). For a top contact device, the organic material is formed first, followed by drain and source electrode evaporation through a shadow mask. The resolution is limited to several tens of micrometers in this configuration. As regards device performance, OTFTs with a top contact typically exhibit a superior performance compared to bottom contact types due to the larger contact area and lower contact resistance. Typically, a molecular thin film exhibits a much lower mobility value than semiconductor materials with covalent bonds, which means the electric current provided by OTFTs is typically smaller than that of a-Si and poly-Si based TFTs. 32 Device configurations

33 BENEFITS AND CHALENGES Benefits of an OTFT: Does not require glass substrate as amorphous Si does. It could be made on a piece of plastic. Manufactured at lower temperatures Deposition techniques could reduce costs dramatically. Challenges involved: Work arounds for complications with photo resists. To find organic semiconductors with high enough mobilities and switching times. 33

34 OTFT technologys application is diverse. Organic thin-film transistor (OTFT) technology involves the use of organic semiconducting compounds in electronic components, notably computer displays. Such displays are bright, the colors are vivid, they provide fast response times (which need to be developed in OTFT), and they are easy to read in most ambient lighting environments. Organic substrates allow for displays to be fabricated on flexible surfaces, rather than on rigid materials as is necessary in traditional TFT displays. A piece of flexible plastic might be coated with OTFT material and made into a display that can be handled like a paper document. Sets of such displays might be bundled, producing magazines or newspapers whose page contents can be varied periodically, or even animated. This has far-reaching ramifications. For example, comic book characters might move around the pages and speak audible words. More likely, such displays will find use in portable computers and communications systems. 34 Future

35 35 1.Jiun-Haw Lee, David N. Liu, Shin-TsonWu, Introduction to Flat Panel Displays, chapter3: thin film transistors, Wiley-SID Series in Display Technology. 2.Antonio Facchetti, Tobin J. marks, Transparent Electronics. 3. Alberto Salleo, Fabrication and characterization of highperformance polymer thin-film transistors, Palo Alto research center. References:


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