1. Overview of Optoelectronic Devices and Materials Research Group (ODM) Alf Adams Optoelectronic Devices and Materials Research Group Tel +44 (0)1483 879310 Fax +44 (0)1483 876781 University of Surrey School of Physics and Chemistry Guildford, Surrey GU2 7XH, UK

2. Overview of Optoelectronic Devices and Materials Research Group (ODM) Eoin O’Reilly Optoelectronic Devices and Materials Research Group Tel +44 (0)1483 876785 Fax +44 (0)1483 876781 University of Surrey School of Physics and Chemistry Guildford, Surrey GU2 7XH, UK

3. Overview of Optoelectronic Devices and Materials Research Group (ODM) Jeremy Allam Optoelectronic Devices and Materials Research Group Tel +44 (0)1483 876799 Fax +44 (0)1483 876781 University of Surrey School of Physics and Chemistry Guildford, Surrey GU2 7XH, UK

4. Overview of Optoelectronic Devices and Materials Research Group (ODM) Optoelectronic Devices and Materials Research Group Tel +44 (0)1483 876800 Fax +44 (0)1483 876781 University of Surrey School of Physics and Chemistry Guildford, Surrey GU2 7XH, UK

5. ODM quotes... Exploring the fundamental physics of laser-matter interactions, developing new materials for photonics and advanced optics. We do experiment and theory with rigour and vigour A.R. Adams, FRS Fun and innovative science, plus the bonus of a massive (well- paid) jobs boom in photonics/laser science Take the challenge, ODM Although less than one PhD in 12 specializes in optics/lasers, this subfield accounted for almost one-fourth of the potentially permanent positions outside of academia Recently released employment report, American Institute of Physics

6. III-N and II-VI materials Visible wave- lengths: displays III-N materials (AlN, GaN, InN) for blue light emitters “dilute nitrides” (GaNAs, GaInNAs) are promising for the infrared (large bowing gives small bandgap)

7. Bandstructure of zincblende semiconductors not only the bandgap, but also energies of ‘critical points’ in the bandstructure (E , E L, E X ) are important for optoelectronic device performance

8. Conventional III-V semiconductors 1.3 µm, 1.55µm telecom s bands GaInAs lattice-matched to InP dominates applications in optical telecoms

9. Semiconductor Materials B O In C Si Ge Sn N AlP GaAs Sb Se S Zn TeCd IIIIVVVIII 2 3 4 5 period group Common tetrahedral (zincblende) semconductors: group IV III-V II-VI Silicon is ubiquitous in electronics, but interacts relatively weakly with light direct-gap III-V’s are used for light emission and detection in the visible and near-infrared

10. The Physics Department will be hosting a Postgraduate Recruitment Fair on Wednesday 13th February at 16:00 in 7AC05 and corridors including at 17:15 a short talk on ‘Research Opportunities and Funding’ by Prof. Tostevin Come and find out about opportunities for PhD or Masters degrees in the Department of Physics and related departments in the University of Surrey. Other local Universities have also been invited. To all students graduating in 2002

11. ODM: world leaders in … use of hydrostatic pressure to investigate physical processes in semiconductors and optoelectronic devices elucidation of loss mechanisms in semiconductor lasers design and characterisation of strained-layer quantum well lasers theory of strained quantum dots understanding physical properties of dilute nitrides

12. ODM Past the ODM group founded 1986 by Alf Adams numerous achievements in understanding and improving semiconductor optoelectronic devices, e.g. –determined loss mechanisms in lasers for telecommunications and origin of “T0 problem” –invention of strained-layer quantum well lasers: now ubiquitous in communications and data storage (CDs) work on semiconductor lasers recognised by: –election of Prof. Adams to Royal Society –award of Duddel Medal of Institute of Physics

13. ODM Present presently 30 ODM group members: –10 academic staff, –5 Postdocs, –2 Support –13 PhD students >£2M in current research grants Surrey Physics rated “4A” in Research Assessment Exercise A varied and exciting research portfolio

14. ODM Members Academic Staff: –Prof. Alf Adams (Group Leader) –Prof. Jeremy Allam –Dr. Alexey Andreev –Prof. Alan Crocker –Dr. Dave Faux –Dr. Jeff Hosea –Dr. Steve Hughes –Dr. Dave Lancefield –Dr. Ben Murdin –Prof. Eoin O’Reilly (Deputy G/L) Research Staff –Dr. S. Jin –Dr. X. Li –Dr. S. Tomic –Mrs. G. E. Smith Support Staff –Dr. C. N. Ahmad Emeritus Professor –Prof. Keith Puttick Visiting Staff –Dr. P. Charsley –Prof. P. E. J. Flewitt –Prof. P. D. Greene –Prof. W. F. Sherman Research Students –S. Choulis –D. Clarke –S. Constant –A. Crawford –S. W. Ellaway –R. Fehse –K. Hild –G. C. Knowles –A. Lindsay –S. Ngarize (Joint Biology) –A. C. Tanczos (Joint Chem.)

15. £10M funding 100 occupants purpose-designed building completed end of 2001 emphasis on industry-relevant, cross-disciplinary research integration of physics and electronic engineering activities for high-bandwidth communications physicselectronic engineering … into new Advanced Technology Institute: Optoelectronic Devices and Materials Solid-State Electronics Biosensors Food Science Integration of related research activities... ODM Future

16. Advanced Technology Institute

17. ATI: a £10m UniS/HEFCE 50:50 Joint Venture For UniS *Building on existing strengths while allowing for new initiatives *A high-technology beacon at the campus entrance *A research hotel for chosen industry For HEFCE *Joint Infrastructure Fund (JIF) support for state of the art projects *Support of strategic research for future industry *A strengthening of science that underpins biotechnology RATIONALE: *Co-locate six research groups from three Schools to stimulate cross- disciplinary research: Microwave subsystems, lasers and optoelectronics, large area electronics, ion beam applications, high pressure, biosensors *Rationalise the use of cleanroom facilities at UniS *Multi-purpose facility capable of rapid redirection of use. A new concept in university research management

18. ODM Research Style... from fundamental science to devices tight coupling of experiment and theory broad coverage of semiconductor materials / wavelengths novel methods and expertise strong links with industry

19. ODM … fundamental to applied Fundamental Applied Fundamental interactions Device character- isation Systems concepts Systems character- isation Material properties Device concepts Device modelling and optimisation System modelling and optimisation Material character- isation

20. new device design device character- isation ODM … theory AND experiment wafer growth test structure fabrication advanced device fabrication device modelling material charact- erisation basic theory physical device concept basic experi- ments material properties device proof-of- principle device fab.

21. ODM … theory AND experiment

22. ODM... on your wavelength! UVvisibleNIRMIRFIRMMW RF Spectral range: Applic- ations: optical storage displays optical comms sensing imagingradar wireless Experi- mental methods: THz FEL Ultrafast electronics tunable lasers / OPA Novel materials/ structures: dilute nitrides: GaInNAs GaInNSb inter-subband devices: Quantum Cascade LD GaNInGaAsElectronics: Si, SiGe GaAs Pb salts InGaAsPHgCdTe Materials for sources:

23. ODM... facilities and expertise Experimental facilities New ATI facilities Theoretical methods application of hydrostatic pressure to optoelectronic devices and materials novel modulated reflectance methods users of FELIX Free Electron Laser wide range of standard methods: optical, electronic, cryogenic bandstructures and transition rates of semiconductor nanostructures mechanical-electronic-optical properties of strained semiconductors novel ultrafast photon-electron interactions and transport new ultrafast laser facility extensive clean room for fabrication

24. ODM... talks to industry Recent industrial partners awareness of IPR issues awareness of commercial time-scales collaboration with multiple companies, in non-overlapping / non-competing projects ODM is “industry- friendly”: Examples of commercial output: strained-layer lasers (Uniphase, BT, Nortel) polarisation-free optical amplifiers (Nortel) visible VCSELs (in discussions) British Telecom Nortel Uniphase Agilent DERA Epitaxial Products International Infineon

25. ODM... collaboration model Industrial collaborator wafer growth test structure fabrication advanced device fabrication device character -isation new device design device modelling material character -isation basic theory physical device concept UniS- ODM Close collaboration of UniS- ODM with industry tightly-coupled experiments and modelling on real-world devices