Presentation is loading. Please wait.

Presentation is loading. Please wait.

© February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 1 Rochester Institute of Technology Microelectronic Engineering ROCHESTER INSTITUTE.

Similar presentations


Presentation on theme: "© February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 1 Rochester Institute of Technology Microelectronic Engineering ROCHESTER INSTITUTE."— Presentation transcript:

1 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 1 Rochester Institute of Technology Microelectronic Engineering ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING  Canon Four Levels per Mask Plate  Stepper Jobs  Dr. Lynn Fuller  Webpage:  Microelectronic Engineering  Rochester Institute of Technology  82 Lomb Memorial Drive  Rochester, NY  Tel (585)  Fax (585)   Department webpage: Canon_4X1_Masks.ppt

2 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 2 Rochester Institute of Technology Microelectronic Engineering OUTLINE Introduction Chip Design Calculations Mask Example Approach Level 1 Details Level 2,3,4,5,6,7,8,9,10,11,12 Details Results

3 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 3 Rochester Institute of Technology Microelectronic Engineering INTRODUCTION Placing four photo levels on one mask plate can reduce the number of mask plates by a factor of four. This saves time, costs and inventory of masks needed for projects. For example a 12 level mask set for CMOS will require only 3 mask plates. The disadvantage of this approach is that the chip size is limited to 10mm by 10mm compared to 20mm by 20mm for 1 level per plate masks. The stepper jobs are slightly more complicated but once created provide the same overlay and resolution.

4 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 4 Rochester Institute of Technology Microelectronic Engineering CALCULATING SHIFTS TO OVER LAY LEVELS 2,3,4,5 The first layer is placed on the wafer with no alignment. Lets use an example where a chip has its TVPA marks in the center of the chip and the B scope multi-marks are slightly above, and C scope multi-marks are slightly to the left. The Mask from non chrome side Each level is centered +/- 20 mm from the center of the plate Level 1 Level 2 Level 4 Level 3 Wafer after 1 st exposure with blades wide open Center of shot is placed under the center of the optical column

5 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 5 Rochester Institute of Technology Microelectronic Engineering The Mask from non chrome side Level 1 Level 2 Level 4 Level 3 CALCULATING SHIFTS TO OVER LAY LEVEL Wafer after 1 st exposure with blades wide open The subsequent layers are aligned by locating the center of the TVPA and multi-marks from the first layer. Then calculating the center of the chip and moving it under the center of the optical column and make the shot. If in the stepper job the TVPA mark is given as X=0 and Y=0 the shot will be made with the 1 st level TVPA under the center of the optical column resulting in exposure as shown. To get level 2 (red) to overlay level 1(green) we give x = -4mm and y = -4mm for the TVPA mark location in the stepper job. The stepper will shift the wafer -4 mm in x and -4mm in y when moving the wafer under the center of the optical column. Thus placing the 3 rd quadrant (level 2) over the 2 nd quadrant (level 1) as desired.

6 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 6 Rochester Institute of Technology Microelectronic Engineering The Mask from non chrome side Level 1 Level 2 Level 4 Level 3 CALCULATING SHIFTS TO OVER LAY LEVELS 3 To get level 3 to overlay level 1(green) we give x = -4mm and y = +4mm for the TVPA mark location in the stepper job. The stepper will shift the wafer -4 mm in x and +4mm in y when moving the wafer under the center of the optical column. Thus placing the 4 th quadrant (level 3) over the 2 nd quadrant (level 1) as desired Wafer after 1 st exposure with blades wide open

7 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 7 Rochester Institute of Technology Microelectronic Engineering The Mask from non chrome side Level 1 Level 2 Level 4 Level 3 Wafer after 1 st exposure with blades wide open CALCULATING SHIFTS TO OVER LAY LEVEL To get level 4 to overlay level 1(green) we give x = +4mm and y = +4mm for the TVPA mark location in the stepper job. The stepper will shift the wafer +4 mm in x and +4mm in y when moving the wafer under the center of the optical column. Thus placing the 1 st quadrant (level 4) over the 2 nd quadrant (level 1) as desired.

8 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 8 Rochester Institute of Technology Microelectronic Engineering The Mask from non chrome side Level 5 Level 6 Level 8 Level 7 Wafer after 1 st exposure with blades wide open CALCULATING SHIFTS TO OVER LAY LEVEL To get level 5 to overlay level 1(green) we give x = -4mm and y = +4mm for the TVPA mark location in the stepper job. The stepper will shift the wafer -4 mm in x and +4mm in y when moving the wafer under the center of the optical column. Thus placing the 2 st quadrant (level 5) over the 2 nd quadrant (level 1) as desired.

9 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 9 Rochester Institute of Technology Microelectronic Engineering MIXED SUB-CMOS CHIP DESIGN (0,0) (Xur,Yur) (X,Y) Alignment Keys

10 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 10 Rochester Institute of Technology Microelectronic Engineering SMALL CMOS MASK EXAMPLE 8mmX8mm Level 1 nwell Fiducial Mark Alignment Keys Level 2 active Fiducial Mark Level 4 PVt Level 3 stop 0,0 Level- 4 Center at 20,20 Level- 1 Center at -20,20 Level- 3 Center at 20,-20 Level- 2 Center at -20,-20 View from Non-Chrome Side Keys

11 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 11 Rochester Institute of Technology Microelectronic Engineering LARGE CMOS MASK EXAMPLE 10mmX10mm Level 1 nwell Fiducial Mark Alignment Keys Level 2 active Fiducial Mark Level 4 Vt Level 3 stop 0,0 Level- 4 Center at 25,25 Level- 1 Center at -25,25 View from Non-Chrome Side

12 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 12 Rochester Institute of Technology Microelectronic Engineering CALCULATIONS FOR MIXED SUB-CMOS

13 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 13 Rochester Institute of Technology Microelectronic Engineering CALCULATIONS FOR PMOS (SHORTCOURSE)

14 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 14 Rochester Institute of Technology Microelectronic Engineering CALCULATIONS FOR LARGE CMOS TEMPLATE

15 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 15 Rochester Institute of Technology Microelectronic Engineering APPROACH First Level Exposure – cover the 1 st, 3 rd and 4 th quadrants of the mask using the blade position in the shot file. - In the layout file create a block and shift the block CQ/5 mm in X and –CQ/5 mm in Y to center the array on the wafer. - In the process file select 1 st Level – no alignment Second level Exposure – cover the 1 st, 2 nd and 4 th quadrants of the mask using the blade position in the shot file. -no shift in the layout file (Otherwise same as level 1) - Shift the PA and Fine Alignment Mark positions on page 4 and 13 of the process file Third level Exposure – cover the 1st, 2nd and 3rd quadrants of the mask using the blade position in the shot file. -no shift in the layout file - Shift the PA and Fine Alignment Mark positions on page 4 and 13 of the process file

16 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 16 Rochester Institute of Technology Microelectronic Engineering BLADE POSITIONS FOR SHOT FILES LEVEL 1 2 nd Quadrant LEVEL 2 3 nd Quadrant LEVEL 3 4 nd Quadrant LEVEL 4 1 st Quadrant BL-10mm 00 BR0010mm BU10mm00 BD0-10mm 0 (0,0) Br = 0 mm Bl = -10 mm Bu = +10 mm Bd = 0 mm Blade positions are in mm referenced at the wafer. Level 1

17 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 17 Rochester Institute of Technology Microelectronic Engineering 1 st LEVEL LAYOUT FILE #### LAYOUT EDITOR (File ID)### (page-1) File name; 1. Comment; #### LAYOUT EDITOR (File ID)### (page-2) 1. Matrix Invalid Area: 2. Step Size; Sx = Sy = 3. Matrix; Clm = Row = 4. Origin;X=Y= 5. Reticle Table Name ; Lmixed4X1_nwell 13 mm anything you want 8.2 mm 14 0 mm RF012subcmos On page 2 you can create and shift blocks

18 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 18 Rochester Institute of Technology Microelectronic Engineering 1 ST LEVEL LAYOUT CREATE AND SHIFT BLOCK Select Function Key “Modify” Select Function Key “Other Menu” Select Function Key “Shift Copy Block” Select Function Key “Add Block” Row * Column * Go Go Sure? 1 = Yes Select Function Key “Shift Block” X = 4mm Y = -4mm Clear Block 1 = Yes Exit Save

19 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 19 Rochester Institute of Technology Microelectronic Engineering 1 st LEVEL - PROCESS FILE #### PROCESS EDITOR (File ID)### (page-1) File name; 1. Comment; 2. Alignment Sequence: 1st Mask or AGA …. 3. TTL Alignment Mode (none, I-line or HeNe/B 2 ) 4. TV PA Measurement Mode; #### PROCESS EDITOR (Reticle ID)### (page-2) 1. Reticle ID #### PROCESS EDITOR (Fine Reticle Alignment)### (page-3) 1. Fine Align Tol xy = Theta = Lmixed4X_nwell/PFmixed4X_nwell anything you want, like: second level active The Process file has 36 pages, only highlighted pages can be accessed, if AGA in item 2 page 2 is selected then page 4 is highlighted and gives row and column and x,y location of the prealignment marks. If alignment mode HeNe is selected page 13 gives the x&y coordinates of the fine alignment marks, if I-line was selected then pg 10&11give fine alignment mark locations, if 1 st Mask is selected page 4 to 36 are bypassed. HeNe/B 2 Nwell 0.03 µm 1 st Mask PA

20 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 20 Rochester Institute of Technology Microelectronic Engineering 2 ND 3 RD 4 TH LEVEL PROCESS FILE Page –1 Alignment Mode 2. Alignment Sequence Mode; AGA 3. TTL Alignment mode. ; HeNe-TV 4. TV PA Measurement Mode ; PA Page –4 1.L) Shot: clm= ?row= ? PA Mark Position; Xlp=QPAX mm Ylp= QPAY mm 2.R) Shot: clm= ?row= ? PA Mark Position; Xrp=QPAX mm Yrp= QPAY mm Page –13 1.AA Mark Position; B: X=BF2X mm Y = BF2Y mm C: X=CF2X mm Y = CF2Y mm BrotX=0Y=0 2.AA Mark Pattern ; 20P-4F 3.Mark Condition ; Island 4.Wafer Surface Condition ; 0 Page –15 1.AA illumination Mode ; Mode-3 This process file does alignment to 2 TVPA marks and then looks at 4 locations for fine alignment. It uses Broad-Band illumination and 20P-4F multi-marks. Page –17 1. Number of sample shots (2,4,6,8,12,16) Main; 4 Preliminary ; 4 2. AGA for first wafer ; AGA AGA for 2 nd and more wafer ; AGA Page –19 1.Limit of x or y difference ; 0.5µm (default=0.2µm, can be as large as 9µm) C1…. R1….

21 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 21 Rochester Institute of Technology Microelectronic Engineering 2 ND LEVEL OVERLAY VERIFICATION Mixed Sub-CMOS Product

22 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 22 Rochester Institute of Technology Microelectronic Engineering OVERLAY VERIFICATION FOR BIG CMOS Level 4 VT Level 3 Stop Level 2 Active

23 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 23 Rochester Institute of Technology Microelectronic Engineering EXAMPLE FILE NAMES Stepper JobLayout FileShot FileProcess FileReticle Table Reticle ID mixed4x1_nwellLmixed4x1_nwellSmixed4x1_nwellPmixed4x1_nwellRmixed4xMixed4x1 Mixed4x1_actLmixed4x1_actSmixed4x1_actPmixed4x1_actRmixed4xMixed4x1 Mixed4x1_stopLmixed4x1_stopSmixed4x1_stopPmixed4x1_stopRmixed4xMixed4x1 Mixed4x1_vtLmixed4x1_vtSmixed4x1_vtPmixed4x1_vtRmixed4xMixed4x1 Mixed4x1_polyLmixed4x1_polySmixed4x1_polyPmixed4x1_polyRmixed4xMixed4x1 Note: mixed4x1_nwell is 1 st level no alignment, quadrant 2 and Mixed4x1_poly is level 5, 9 etc., with alignment, quadrant 2 Small (< 8mm) CMOS Chips

24 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 24 Rochester Institute of Technology Microelectronic Engineering EXAMPLE FILE NAMES Stepper JobLayout FileShot FileProcess FileReticle Table Reticle ID L082SHORT4X_DIFF S082SHORT4X_DIFFP082SHORT4X_DIFFRmixed4xMixed4x1 L082SHORT4X_OX S082SHORT4X_OXP082SHORT4X_OXRmixed4xMixed4x2 L082SHORT4X_CC S082SHORT4X_CCP082SHORT4X_CCRmixed4xMixed4x3 L082SHORT4X_M S082SHORT4X_MP082SHORT4X_MRmixed4xMixed4x4 END Note: L082SHORT4X_DIFF is 1 st level no alignment, quadrant 2 Metal Gate PMOS and Shortcourse Jobs

25 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 25 Rochester Institute of Technology Microelectronic Engineering EXAMPLE FILE NAMES Stepper JobLayout FileShot FileProcess FileReticle Table Reticle ID F083ADC_nwellLF083ADC_nwellSF083ADC_nwellPF083ADC_nwellRmixed4xMixed4x1 F083ADC_actLF083ADC_actSF083ADC_actPF083ADC_actRmixed4xMixed4x2 F083ADC_stopLF083ADC_stopSF083ADC_stopPF083ADC_stopRmixed4xMixed4x3 F083ADC_vtLF083ADC_vtSF083ADC_vtPF083ADC_vtRmixed4xMixed4x4 F083ADC_polyLF083ADC_polySF083ADC_polyPF083ADC_polyRmixed4xMixed4x1 Note: F083ADC _nwell is 1 st level no alignment, quadrant 2 and F083ADC _poly is level 5, 9 etc., with alignment, quadrant 2 Large (< 10mm) CMOS Chips

26 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 26 Rochester Institute of Technology Microelectronic Engineering 9.8mm X 9.8mm CHIP TEMPLATE /shared/cmostestchip2007/CMOS4XTEMPLATE Template for CMOS4Xdesigns Each cell is 800 µm x 800µm Entire Chip is 9800µm x 9800µm Lower Half has Process Verification Test Structures. There is a 200µm street between quadrants on the testchip This is the largest chip that can have 4 masks per plate.

27 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 27 Rochester Institute of Technology Microelectronic Engineering EXAMPLE OF A MEBES PLOT JOB 2/25/09 9:12:23 MEBES 967 REV, 4.6 SPECIFICATION FILE: JOB:SHORT.JB DTITLE: CMOS FOUR LEVELS / PLATE ITITLE: BARCODE MTITLE: LEVELS 1,2,3,4 CASSETTE TYPE ID:14 LEVEL PLOTTED: 1 JOB SCALE: 1 JOB SCALE: ADDRESSING: MICRONS PLOT SCALE: 1.00 TO 1 CM ID PATTERN X DIMENSION Y DIMENSION PLACEMENT ORIENTATION TONE 1. NWELL UNMIRROR UNMIRROR NORMAL 2. ACTIVE UNMIRROR UNMIRROR NORMAL 3. STOP UNMIRROR UNMIRROR NORMAL 4. VT UNMIRROR UNMIRROR NORMAL LAYER 1,2,3,4 CMOS 4 LEVELS / PLATE BARCODE LVL 4 12 cm 0.0 LVL 1 LVL 3 LVL 2 X Axis Y Axis

28 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 28 Rochester Institute of Technology Microelectronic Engineering CREATE A MEBES JOB DECK SLICE EDIT, means 5” by 5” glass OPTICON AA=0.5, BA=0.5, PA, SA=40, VA=10 AA means address all levels = 0.5 µm BA means beam size all levels = 0.5 µm PA means all levels positive resist SA means all levels spot current 40 nA VA means all levels acceleration = 10KV MTITLE 1, ADV-CMOS STI DTITLE A, RIT EMCR650 ITITLE A, BARCODE ORIENT A, ITITLE, TITLEROT=90, LOC= CHIP1, (1,cmostestchip-LVL-01, RC=15), first level of cmostestchip maskset END SLICE EDIT,14 OPTION AA=0.5, BA=0.5, PA, SA=250, VA=10 REPEAT A, 10 STITLE A, 10000, 10000, MEBES III MTITLE 1, NWELL MTITLE 2, ACTIVE MTITLE 3, STOP MTITLE 4, PMOS VT MTITLE 5, POLY MTITLE 6, LDD N MTITLE 7, LDD P MTITLE 8, N DS MTITLE 9, P DS MTITLE 10, CONTACT MTITLE 11, METAL DTITLE A, SUBMICRON CMOS CHIP 1,(A,RITLOGO-50-01) ROWS 10000/63500 CHIP 2,(A,FIDUCIA-LS-01) ROWS 63500/63500 CHIP 3, $ (1R,EMCR ), $ (2,EMCR ), $ (3,EMCR ), $ (4,EMCR ), $ (5,EMCR ), $ (6,EMCR ), $ (7,EMCR ), $ (8,EMCR ), $ (9,EMCR ), $ (10,EMCR ), $ (11,EMCR ) ROWS 63500/63500 END

29 © February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 29 Rochester Institute of Technology Microelectronic Engineering REFERENCES 1.Robert Manley process improvement project. 2.Germain Fenger process improvement project. 3. Fuller, Lynn Introduction to Reduction Steppers. Rochester Institute of Technology, FPA-200i1 Maintenance Training: Basic Operations Manual, Canon USA 5. Chuck Smith, MicroE Alumni 1987, Applications Engineer, Canon USA, Inc x203, 6. Bill Cooman, Canon Equipment Engineer, Maintains the RIT Canon FPA 2000-i1


Download ppt "© February 8, 2009 Dr. Lynn Fuller Canon 4X1 Mask Stepper Jobs Page 1 Rochester Institute of Technology Microelectronic Engineering ROCHESTER INSTITUTE."

Similar presentations


Ads by Google