We think you have liked this presentation. If you wish to download it, please recommend it to your friends in any social system. Share buttons are a little bit lower. Thank you!
Presentation is loading. Please wait.
Published byThomas Marr
Modified about 1 year ago
SU-8 Testing SU8 process Soft Bake (SB) for thin SU8
“Control” Recipe 500rpm; 2000rpm Soft Bake 93°C Exposure 275 W PEB 93°C Develop 4min in SU8 developer SU8 developer rinse IPA rinse/ Nitrogen Dry
1 st Run of Tests 4 samples; 8 devices/sample 4 Wells, 4 Blanks/sample S1: “Control”:All shorted. Avg Well(W)- 8.6Ω Avg Blank(B)- 10Ω, misaligned. S2: 8min (Evap/PEB)Avg W-2.7±0.8Ω B-11MΩ Avg Blank Cap: 15pF 0/3 Short S3: 13min(Evap/PEB)Avg W-4.9Ω B-5.6±7.7MΩ Avg Blank Cap: 17pF 1/2 Short S4: 15min(Evap/PEB)Avg W-3.8±1Ω B-11MΩ » Avg Blank Cap: 17pF 0/2 Short Cracking seen in S2, S3, S4
2 nd set of test samples Summary 4 samples 2 “Controls” 2.5 min 60°C; 1min 93°C 5 min 60°C; 1min 93°C
2 nd Test Results “Control 1” S5 DeviceCapacitance(p F) Resistance(Ω)Type 129.4B 20.5W x10^6B 424W 524B 67W 7 421B 817W Summary: W: 4/4 Shorted B: 3/4 Shorted Well Average R: 12.1 ± 10Ω Excluding 3 Blank Average R: 158± 230Ω Blank Capacitance: 9.38pF
“Control 2” S6 DeviceCapacitance(p F) Resistance(Ω)Type 1 Damaged9.74.6x10^6W x10^6B 3 Damaged x10^5W x10^7B 5142W x10^7B 746W B Summary: W: 2/4 Shorted B: 0/4 Shorted Avg Blank Capacitance: 9.57± 0.5pF Avg Well Resistance: 94± 68Ω
2.5min SB S7 DeviceCapacitance(p F) Resistance(Ω)Type 113.4W 2428B 310.8W 4294B 53.7W 65.7B 74.1W 811.6B Summary: All Shorted Avg Blank Resistance: 184.8± 211Ω Avg Well Resistance: 8± 4.9Ω
5min SB S8 DeviceCapacitance(p F) Resistance(Ω)Type 14.8W 216B 31.9W 444B 54.3W 6 Error0B 7* W x10^6B Summary: W: 3/4 Shorted B: 3/4 Shorted Avg Blank Resistance: 0.19± 0.33MΩ Avg Well Resistance: 3.7± 1.6Ω 7*: Remeasured and same effect ignored in the average.
“Control 2” 20x
“Control 2” 100x
2.5min SB 100x
5min SB 100x
3 rd SU8 tests 2 samples, 8 Devices S9: 8min 60°C, PEB 95°C S10: 10min Exp, PEB 95°C
S9 Back Contact Broken no Resistances Measured Capacitances W: 2/4 Shorted B: 1/4 Shorted Avg Capacitance Well: 19.3 ± 0.6pF DeviceCapacitance(p F) Resistance(Ω)Type 1W 2 B 312W 419B 5W 619B 7 W 820B
S10 DeviceCapacitance(p F) Resistance(Ω)Type 14.5W 218B 36.7W 4121B 53.9W 6127B 75W 8 118B Summary: W: 4/4 Shorted B: 4/4 Shorted Avg Blank Capacitance: ± pF Avg Well Resistance: 5.0± 1.2Ω Avg Blank Resistance: 96± 52Ω
SU-8 Testing (v1b) Thin SU8 on glass slide Test Soft Bake (SB) and Post Exposure Bake (PEB)
SU-8 Testing (v1f) Thin SU8 on glass slide Test: (1)Soft Bake (SB) and (2)Post Exposure Bake (PEB)
SU-8 Testing (v1g) Thin SU8 on glass slide Test: (1)Soft Bake (SB) and (2)Post Exposure Bake (PEB) 1.
SU-8 Testing (v1h) Thin SU8 on glass slide Test: (1)Soft Bake (SB) and (2)Post Exposure Bake (PEB) 1.
1 SU-8 Testing (v1l) Thin SU8 on glass slide Test: Soft Bake (SB) and Post Exposure Bake (PEB)
Life Expectancy is 180 th in the World. Literacy Rate is 4 th in Africa.
8/8/20061 LATE TYPE EVAP At Rest 1. 8/8/20062 LATE TYPE EVAP Components 2.
Weekly Report Renjie Chen. /6 Summary After Wednesday group meeting, I was trying to finish the last step EBL writing of Fin structure and do ICP dry.
1 st Place Post-Secondary Winner. 2 nd Place Post-Secondary Winner.
PCB Flexure Comparison Testing NMC Standard & NMC-P Soft Terminal Ceramic Chip Capacitor MLCCs PCB Flexure Comparison Testing NMC Standard & NMC-P Soft.
Creating Snow flake structures using EBL Date:January 2011 by:Lejmarc Snowball Principle Investigator:Dr. William Knowlton for:Nanoscale Materials and.
2008 CRCT Domain Summary Beecher Hills Elementary School Numbers Represent the Average % Correct in Each Domain SRT-1.
K-6 Critical Areas of Focus K-6 Key Fluencies Kindergarten – Critical Areas of Focus.
BioMEMS Device Fabrication Procedure Theresa Valentine 8/19/03.
ACTFEL Alternating Current Thin Film Electroluminescent Lamps.
Test of HV Prototype Boards for LHCb Outer Tracker NIKHEF, Amsterdam The Netherlands
FUNCTIONAL CHEMICALS RESEARCH LABORATORIES Copyright(c) NIPPON KAYAKU Co., Ltd. 1 KAYAKU MicroChem. Co., Ltd. MicroChem. Corp. NIPPON KAYAKU Co., Ltd.
PMMA & HSQ trend chart December 2012 Sangeeth kallatt.
Multiple current exposure without mark detection Possible? Tolerance? Using only the 4 th lens: –1 st exposure: 0.1nA, 2 nd aperture (min. current) –2.
Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh.
PDMS processing & devices. 2 nd master PDMS 1 st master PDMS control channel active channel PDMS 3 rd substrate.
Beginners Rounding. A Poem to help you remember how to round… Find your place number. Look right next door. 4 or less just ignore. 5 or more, add 1 more.
Cake Recipe. Ingredients Utensils 1 st Step Pre-Heat oven to 180 degrees Celsius.
The Race is On! Putting Words in Alphabetical Order.
REGISTRATION OF SUMMARY IN DIGITAL PORTFOLIO 1 st minute.
04/02/02EECS 3121 Lecture 23: DRAM + Driving large capacitances EECS 312 Reading: , 8.2.3, 8.5 (text)
PCI – 2 point scale Important Not Important Sample or Sample or Sample or Group 1 Group 2 Group 3 Response to 1 st PCI variable Response to 2 nd PCI variable.
Facility meeting Nov Gopal Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.
CUSTOMER CONVERSION JOURNEY SECTOR: MOBILE. Contents Background and methodology What we measured – Brands and their activity Results – Web site visitors.
Browser Wars (Click on the logo to see the performance)
Arithmetic Sequences and Series. A sequence is arithmetic if each term – the previous term = d where d is a constant e.g. For the sequence d = 2 nd term.
Dolan Bridge Zoom Show. Optical Bridge Zoom Show.
Project Maths - Teaching and Learning Relative Frequency % Bar Chart to Relative Frequency Bar Chart What is the median height.
Etching Film deposition Photoresist coating Lithography Development Film etching Together with calibration sample Optical inspection Measure photoresist.
PCI – 2 point scale Favor Oppose Action Support Sample or Sample or Sample or Group 1 Group 2 Group 3 Response to 1 st PCI variable Response to 2 nd PCI.
Updated Resistivity measurement on Mm-Batch-4 Bakelite & RPC Bakelite sample measurements Liang Guan TGRPC R&D Biweekly meeting
Instrumentation (AMME2700) 1 Instrumentation Dr. Xiaofeng Wu.
5 Number Summary. Definition (Five-Number Summary) The five-number summary of a set of numbers consists of the five quantities – Minimum – 1st quartile.
Diode Theory Chapter 3. Copyright © The McGraw-Hill Companies, Inc., Permission required for reproduction or display Topics Covered in Chapter 3 Schematic.
Barton St Peter’s Advent Calendar.
Descriptive Statistics1 LSSG Green Belt Training Descriptive Statistics.
Appropriate Care for iPads How to keep it clean and avoid paying fines.
Synthesis and characterization of bulk functionalized polyurethane foams for lead ion removal from water at ppb levels Cristian Bonilla Subhashini Gunashekar.
+ Selection Sort Method Joon Hee Lee August 12, 2012.
Lab 3 Separation of a Mixture Objective - Separate a mixture of salt, sand & naphthalene (nap) Experiment - Mass of 250 mL beaker = _________ g Mass of.
RESUME - A summary of your employment history, education and accomplishments WHY? - Vital to finding employment - The initial reading of the resume by.
Facility meeting Oct Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.
Dynamic Behavior of MOS Transistor. The Gate Capacitance t ox n + n + Cross section L Gate oxide x d x d L d Polysilicon gate Top view Gate-bulk overlap.
© 2017 SlidePlayer.com Inc. All rights reserved.