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Strong coupling between Tamm Plasmon and QW exciton E. Homeyer, C. Symonds, A. Lemaitre*, J.C. Plenet, J. Bellessa LPMCN (Laboratory of Physics of Condensed.

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Presentation on theme: "Strong coupling between Tamm Plasmon and QW exciton E. Homeyer, C. Symonds, A. Lemaitre*, J.C. Plenet, J. Bellessa LPMCN (Laboratory of Physics of Condensed."— Presentation transcript:

1 Strong coupling between Tamm Plasmon and QW exciton E. Homeyer, C. Symonds, A. Lemaitre*, J.C. Plenet, J. Bellessa LPMCN (Laboratory of Physics of Condensed Mater and Nanostructures) University Claude Bernard Lyon 1, Lyon, France * LPN (Laboratory For Photonics and Nanostructures), Marcoussis, France PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

2 Introduction Outline Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

3 Introduction Outline Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

4 Surface plasmons Surface plasmon : Interface metal / dielectric material Introduction Near a luminescent source (Dye or QW) –Weak coupling regime –Strong coupling regime Metal Dielectric –Damping ∟ & // propagation –TM Mode only PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

5 Plasmon in weak coupling regime Objective : enhancement of the spontaneous emission rate PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Introduction A Akimov et al., Nature. 450, 402 (2007) Enhancement PL : 2.5 x Coupling efficiency 60% For nanoparticles Okamoto K et al. Nature Mat. 3 (9) 601 (2004) A.Neogi, et al., Phys. Rev. B, 66,153305(2002) For active layers such as GaN/InGaN QW –Enhancement SER 92 x –Enhancement PL 17 x

6 Semiconductor nanocrystals arrays : CdSe dots under a thin silver film  Rabi splitting of 112 meV D.E. Gomez et al. Nano Lett (2010) Plasmon in strong coupling PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Introduction Strong interaction between plasmons and : Aggregated dyes. J. Bellessa, C. Bonnand, J.C. Plenet, J. Mugnier., PRL 93, (2004). T.K. Hakala et al. PRL (2009) Laser dyes such as Rhodamine 6G  Rabi splitting energies up to 230 meV.

7 Introduction Outline Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

8 Samples Plasmon in GaAs/GaAlAs heterostructures GaAs QW (x5) Samples elaborated in collaboration with A. Lemaître (LPN) PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Silver Decoupling with a silver grating : Silver periodicity Λ = 250nm Metal Dielectric

9 Plasmon/heavy/light-exciton mixing θ Reflectometry at 77K Anticrossing plasmon/Xlh  Strong coupling between SP and excitons PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Plasmon in GaAs/GaAlAs heterostructures

10 Polaritons : -plasmon/ -heavy hole exciton/ -Light hole exciton V Xhh =22meV V Xlh =21meV J. Bellessa, C. Symonds, C. Meynaud, J.C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, and A. Lemaitre. Phys. Rev. B 78, (2008). PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Plasmon in GaAs/GaAlAs heterostructures Dispersion relation Plasmon/heavy/light-exciton mixing Mixing of X hh & X lh Xhh Plasmon Xlh

11 Still strong RT  Rabi energy at resonance 20 meV Room temperature experiments PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Plasmon in GaAs/GaAlAs heterostructures No polaritonic luminescence is present

12 Introduction Outline Plasmon in GaAs/GaAlAs heterostructures Samples Plasmon / heavy- and light-hole exciton mixing Room temperature experiments Tamm plasmon states Description of Tamm plasmons Emission of Tamm/exciton polaritons Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

13 Surface mode Bragg mirror / metal layer Very narrow linewidth Direct coupling to radiative light TE and TM modes Deep penetration length A. V. Kavokin, I. A. Shelykh, and G. Malpuech, Phys. Rev. B 72, M. E. Sasin, et al., Appl. Phys. Lett. 92, Description of Tamm plasmons Tamm plasmon states PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

14 Quantum wells in a Tamm structure Tamm plasmon states PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Thick Bragg mirror to reduce the linewidth GaAs substrate AlAs Al 0.05 Ga 0.95 As 25 Silver film on top of the structure  Tamm plasmon mode Inclusion of 2 InGaAs/AlGaAs QWs in the 15 last high refractive index layers 15 Silver film

15 Reflectometry experiments Tamm plasmon states PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Anticrossing between the exciton and the Tamm plasmon Rabi splitting : 12 meV Thin polariton lines compared to the splitting Simulations with a transfer matrix method

16 Luminescence of hybrid states Tamm plasmon states PLMCN 2010, Cuernavaca, Mexico - April 15th 2010 Strong emission at the low polariton energy Incoherent luminescence Emission in TE and TM polarisations

17 Conclusion Hybrid states plasmon/exciton in inorganic semiconductors Plasmon/Xlh/Xhh interaction energies of 21 and 22 meV Emission of Tamm plasmon/exciton polaritons PLMCN 2010, Cuernavaca, Mexico - April 15th 2010


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