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Ultra Low Power RF Section of a Passive Microwave RFID Transponder in 0.35 μm BiCMOS Giuseppe De Vita, Giuseppe Iannaccone Dipartimento di Ingegneria dell’Informazione:

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Presentation on theme: "Ultra Low Power RF Section of a Passive Microwave RFID Transponder in 0.35 μm BiCMOS Giuseppe De Vita, Giuseppe Iannaccone Dipartimento di Ingegneria dell’Informazione:"— Presentation transcript:

1 Ultra Low Power RF Section of a Passive Microwave RFID Transponder in 0.35 μm BiCMOS Giuseppe De Vita, Giuseppe Iannaccone Dipartimento di Ingegneria dell’Informazione: Elettronica, Informatica, Telecomunicazioni Università degli Studi di Pisa, Via Caruso, I Pisa, Italy {giuseppe.devita, 指導教授:林志明 老師 研究生:許晉榕 學號: S

2 Outline Introduction Architecture of the RF section Voltage regulator Series Voltage Regulator Modulator CONCLUSIONS

3 Introduction The entire circuit has been designed with AMS 0.35 μm BiCMOS Post-layout simulations show the correct operation of the whole section The supply voltage generator, which provides a supply voltage of 0.6 V – appropriately

4 Architecture of the RF section Voltage Multiplier

5 Voltage regulator Reference Voltage Generator

6 Series Voltage Regulator

7 Modulator the channel bandwidth occupation to 250 KHz, the bandwidth of the input signal of the modulator is reduced with a capacitor CIN of 650 fF. The modulator, when transmitting, consumes a power of 15 nW.

8 Demodulator The power consumption of th demodulator, in the condition of minimum power at the input of the RF section, is about 250 nW. The capacitance and resistance in parallel with the output of the demodulator are obtained exploiting the input capacitance of the inverter and the drainsource resistance of an NMOS

9 Conclusions Post-layout simulations show that a voltage supply of 0.6 V is generated with a PSRR larger than -50 dB, at the critical frequencies, and with an AC/DC power efficiency larger than 20%.


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