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© 2008 Silicon Genesis Corporation. All rights reserved. SiGen Equipment & Applications SiGen Equipment & Applications
© 2008 Silicon Genesis Corporation. All rights reserved. SiGens technology enables the transfer of thin layers onto semiconductor or other material substrates 2 Plasma Bond Step: using a proprietary plasma-activation bond process. 3 Cleave Step (rT-CCP ): using a proprietary cleave process. 4 4 Surface Finishing Step: using a proprietary gas-phase non- contact smoothing process. 1 Cleave Plane Formation. 1 Donor Reclaim Surface Finish Cleave Wafer Bond Cleave Plane Formation Plasma-Activation ToolDB&C Tool. 3 2 Thin Layer Transfer Process
© 2008 Silicon Genesis Corporation. All rights reserved. Plasma activation bonding - Achieve equivalent bond strength at low temperatures 800 C High surface energy for bonding of various materials Proven HVM Process and systems –200mm and 300mm systems shipped Standalone Plasma-Activation Tool
© 2008 Silicon Genesis Corporation. All rights reserved. Standalone Plasma-Activation Tool
© 2008 Silicon Genesis Corporation. All rights reserved. rT-CCP - Low as-cleaved surface roughness - Uniform long range surface roughness Enables cleaving of dissimilar materials – SOQ, SOG, GeOI Proven HVM Process and systems – 200mm and 300mm systems shipped SiGens DB&C Tool
© 2008 Silicon Genesis Corporation. All rights reserved. SiGens DB&C Tool
© 2008 Silicon Genesis Corporation. All rights reserved. IP (Patents License) Layer-Transfer Technologies - Thin Layer-Transfer - Plasma Bonding - Layer-Transfer - Surface Finishing Equipment Technologies - Plasma Tool Technology - rT-CCP Cleave Tool Technology New Material Building Blocks - Strained-SOI - GeOI - SOQ - SOG - Si on CMOS SiGens Integrated Solution
© 2008 Silicon Genesis Corporation. All rights reserved. Cold Process – Allows unique dissimilar material systems Non-Contact Smoothing – Best ultra-thin SOI uniformity Plasma-Bonding – Excellent dry fusion bond specifications - Wide applicability in multiple fields - Unique In-Situ bond technology Proven Compatibility - With next-generation applications - With existing semiconductor process equipment Allow high-yield and cost-effective formation of 3D, SOI, SOQ, SOG, GeOI, and other material systems SiGens Innovations
© 2008 Silicon Genesis Corporation. All rights reserved. Semiconductor Applications Semiconductor Applications
© 2008 Silicon Genesis Corporation. All rights reserved. Multiple commercial license Development of strained-SOI ongoing 200mm and 300mm SOI proven in production New strained-SOI developed and being implemented 300mm SOI Wafer Strained-SOI (SSOI) SOI & Strained SOI Application
© 2008 Silicon Genesis Corporation. All rights reserved. Si-Si Hybrid Orientation Technology As-CleavedEPI-Smooth + Anneal direction (across and along view) DSB – Direct Silicon Bond
© 2008 Silicon Genesis Corporation. All rights reserved. Stacked CMOS/Device Structures SiGens layer-transfer can be used for building stacked devices - Build CMOS/Device substrate with interconnects - Deposit CVD oxide and polish - Bond & cleave silicon film (1000-5000 Å range) - Post-cleave processing Deposit CVD Oxide/Polish 2 PA Bond 3 Processed CMOS Wafer 1 Cleave Wafer 4 Post Processing 5 Processed CMOS Substrate Donor Reclaim Cleavable Wafer Donor Wafer
© 2008 Silicon Genesis Corporation. All rights reserved. Quartz base substrate for optical and RF applications Single-crystal silicon layer Higher quality and performance for HDTV Projectors - Better brightness - Lower Cost - Higher Resolution - Faster speed - Higher circuit density Silicon on Quartz (SOQ) Application
© 2008 Silicon Genesis Corporation. All rights reserved. Large-Area Glass (SOG) 300mm Silicon Wafer Silicon Tile Silicon Tile [180mm x 230mm] Gen 2 Glass [370mm x 470mm] Gen 2 Glass [370mm x 470mm] Donor Tile Plates A C B
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