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ECE 442 Power Electronics1 IGBT: Insulated-Gate Bipolar Transistor Combination BJT and MOSFET –High Input Impedance (MOSFET) –Low On-state Conduction Losses.

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Presentation on theme: "ECE 442 Power Electronics1 IGBT: Insulated-Gate Bipolar Transistor Combination BJT and MOSFET –High Input Impedance (MOSFET) –Low On-state Conduction Losses."— Presentation transcript:

1 ECE 442 Power Electronics1 IGBT: Insulated-Gate Bipolar Transistor Combination BJT and MOSFET –High Input Impedance (MOSFET) –Low On-state Conduction Losses (BJT) High Voltage and Current Ratings Symbol

2 ECE 442 Power Electronics2 Cross-Sectional View of an IGBT Metal Silicon Dioxide Metal

3 ECE 442 Power Electronics3 IGBT Equivalent Circuit for V GE

4 ECE 442 Power Electronics4 IGBT Equivalent Circuit for V GE >V T + V CC NPN Transistor becomes forward biased at the BE, drawing current from the Base of the PNP transistor. MOS transistor conducts, drawing current from the Base of the PNP transistor. PNP transistor turns ON, R MOD decreases due to carrier injection from the PNP Emitter.

5 ECE 442 Power Electronics5 Channel is Induced When V GE >V T Induced Channel electrons R MOD PNP R BE NPN

6 ECE 442 Power Electronics6 IGBT Output Characteristics Follows an SCR characteristic

7 ECE 442 Power Electronics7 IGBT Transfer Characteristic

8 ECE 442 Power Electronics8 IGBT Used as a Switch

9 ECE 442 Power Electronics9 Fairchild FGA25N120AND IGBT

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