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Irradiation facilities for semiconductor detectors and electronics

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Presentation on theme: "Irradiation facilities for semiconductor detectors and electronics"— Presentation transcript:

1 Irradiation facilities for semiconductor detectors and electronics
at the INFN National Laboratory of Legnaro Andrea Candelori Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica, Padova

2 OUTLINE • The SIRAD irradiation facility at the TANDEM accelerator: - high energy protons and ions. • The CN accelerator: - protons and neutrons. • Total dose tests: - Tungsten (W) and Molybdenum (Mo) X-rays; - 60Co -rays.

3 The SIRAD Irradiation Facility
The SIRAD irradiation facility is located at the Tandem accelerator of the INFN National Laboratory of Legnaro (Padova, Italy). Tandem accelerator: -Van de Graaff type; MV maximum voltage; two strippers; -servicing 3 experimental halls for nuclear and interdisciplinary Physics; Schematics of the 15 MV Tandem Van de Graaff accelerator and of the SIRAD irradiation facility at the +70º beam line (left). A photograph of the SIRAD irradiation facility is also shown for completeness (right).

4 Typical ion species available at SIRAD
• Ion species from 1H (22-30 MeV) up to 197Au (1.4 MeV/a.m.u.) • LET from 0.02 MeVcm2/mg (1H) up to 81.7 MeVcm2/mg (197Au) The energy values refer to the most probable q1 and q2 charge state, with two stripper stations, and the Tandem operating at 14 MV. 1st multi-source 2nd multi-source

5 Low flux (102-105 ions/cm2s) irradiation set-up on 22 cm2
The on-line beam monitoring system for defocused beams by the fixed and mobile diodes: -left: side view of the experimental set-up; -right: front view (transverse to the beam) of the fixed and mobile diode boards. The mobile diodes are mounted on the sample holder with the DUT. The figure is not drawn to scale.

6 High flux (>108-109 ions/cm2s) irradiation set-up on 55 cm2
The on-line beam monitoring for rastered proton and ion beams by the 33 battery of Faraday cups positioned behind the DUT: side view of the experimental setup. The aperture of each Faraday cup is 0.60.6 cm2. The figure is not drawn to scale.

7 Example of validation for space mission
Validation of the ASIC for the GLAST Large Area Telescope GLAST space telescope International collaboration (NASA, ESA, ASI, INFN,...) INFN Padova: radiation tests of tracker, DAQ electronics ASICs validated for SEE at SIRAD ASICs validated for TD at CNR-ISOF 60Co -ray source COTS validated for SEE at SIRAD

8 Summary of the main research activities at SIRAD
SEE in ASICs for CMS, GLAST, AGILE, ALICE SEE in FPGA Charge loss in Flash E2PROM SEB, SEGR in power MOSFETs RILC and RSB (Ultra-thin gate oxide) Silicon detectors More than 61 papers published in the last 4 years.

9 Beam time allocation at SIRAD in 2004

10 Beam time allocation at SIRAD in 2001-2004

11 SIRAD Collaboration in Italy and abroad
1) Dip. di Fisica and INFN Padova 2) INFN Laboratori Nazionali di Legnaro 3) Dip. Ingegneria dell’Informazione, Padova 4) Tecnomare SpA (Venezia) 5) Center for Advance Space Optics (Trieste) 6) Dip. Fisica and INFN, Trieste 7) ITC-IRST (Trento) 8) Dip. Informatica e Telecomunicazioni, Trento 9) INAF, Sezione di Milano 10)ST Microelectronics (Agrate Brianza, Milano) 11) Dip. Elettronica, Pavia 12) Dip. Ingegneria Industriale, Bergamo 13) Dipartimento di Fisica Sperimentale, Torino 14) Dip. Automatica e Informatica,Politecnico di Torino 15) Dip Fisica and INFN, Bologna 16) Dip. Energetica and INFN, Firenze 17) Aurelia Microelettronica S.p.A. (Viareggio) 18) Dip.Ingegneria Elettronica, Università Roma 2 19) INAF, Sezione di Roma 20) DAEIMI e DSM, Università di Cassino 21) ST Microelectronics (Catania) A) Institut für Experimentalphysik (Amburgo, Germania) B) LETI (Grenoble, Francia) C) Centro Nacional de Microelectronica (Barcellona, Spagna) D) IMEC (Lovanio, Belgio) E) Philips Semiconductor (Nijmegen, Olanda) F) CERN (Ginevra, Svizzera) G) Helsinki Institute of Physics (Finland) H) Santa Cruz Institute for Particle Physica (California, U.S.A) BERGAMO PADOVA PAVIA VIAREGGIO CASSINO

12 CN accelerator Characteristics: Van de Graaff type, 7 MV maximum voltage; Ion species: p (1H); d (2H); t (3H); 4He (single or double charge) and 15N (double charge) Max energy: 7 MeV for single charged species;14 MeV for 4He++; 8 MeV for 15N++. T(d,n)4He 9Be(d,n)10B with moderator D(d,n)3He 7Li(p,n)7Be 9Be(d,n)10B

13 CN accelerator: neutron beams

14 W and Mo X-rays: Seifert Rp-149 Irradiation Facility
• Tube with W ( keV L-lines) or Mo ( keV K-lines) anode. • Maximum tube voltage 60 kV. Maximum tube current 50 mA. • X,Y (motorized) and Z (manual) axis for accurate position setting of the tube. • Radiation hardness qualification of the APV25 chip for the CMS silicon tracker. X-ray tube Semi-automatic probestation Laser pointer Y axis motor X Y Z

15 W and Mo X-rays: radiation field dimensions
20 40 60 80 100 120 140 -20 -15 -10 -5 5 10 15 Dose rate (rad(Si)/s) D=10 cm D=15 cm D=20 cm D=40 cm 13.9 mm 15.5 mm 16.1 mm 20.6 mm X position (mm) 20 40 60 80 100 120 140 -20 -15 -10 -5 5 10 15 Dose rate (rad(Si)/s) D=10 cm D=15 cm D=20 cm D=40 cm 7.2 mm 9.2 mm 11.4 mm 19.4 mm Y position (mm)

16 60Co -ray source (CNR-ISOF)
• Irradiation Facility: Panoramic Gammabeam model 150 A produced by Nordion Ltd (Canada) • Photon energies: MeV and MeV • Present activity: 2000 Ci ( 7.41013 Bq) • Point source for D>10 cm (D= cm) • Dose rate: ~5 rad(Si)/s at D=20 cm, ~1 rad(Si)/s at D=45 cm

17 • The SIRAD irradiation facility at the 15 MV TANDEM accelerator:
Conclusions • The SIRAD irradiation facility at the 15 MV TANDEM accelerator: - Ion species from 1H (23-30 MeV) up to 197Au (1.4 MeV/a.m.u.) - LET from 0.02 MeVcm2/mg up to 81.7 MeVcm2/mg - High (> ions/cm2s) and low ( ions/cm2s) flux set-up - Ion Electron Emission Microscopy possibility - New irradiation chamber and sample holder (ESA standards) • The CN accelerator: - Monochromatic spectra: D(d,n)3He, T(d,n)4He, 7Li(p,n)7Be - Continuous spectra: 9Be(d,n)10B - Thermal neutrons: 9Be(d,n)10B with moderator • Total dose tests: - X-rays: W (L-lines at 7-12 keV) and Mo (K-lines at keV) anode; dose rate: 120 rad(Si)/s. - -rays: 60Co with 1-5 rad(Si)/s dose rate (D=20-45 cm).

18 INFN Laboratori Nazionali di Legnaro More information on the web site
Scuola Nazionale “Rivelatori ed elettronica per applicazioni spaziali, Astrofisica e Fisica delle Alte Energie” INFN Laboratori Nazionali di Legnaro 4-8 Aprile 2005 More information on the web site

19 What is SIRAD? SIRAD is the acronym for SIlicon and RADiation. The SIRAD irradiation facility is dedicated: "to investigate radiation effects on silicon detectors, electronic devices and systems in radiation hostile environments". -Total dose effects as a result of ionization damage. -Bulk effects as a result of displacement damage. -Single event effects as a result of an energetic particle strike. -High energy physics experiments. -Space missions of scientific and commercial satellites.

20 SIRAD upgrade: the Ion Electron Emission Microscope (IEEM)
Purpose: Single Event Effect mapping, Ion Beam Induced Charge Collection studies. Nuclear Microprobe: µ-focused beam IEEM: defocused beam (Sandia) Ion beam 2D electron detector at focal plane of electron optics Object slit (Xhit,Yhit) Nuclear Microprobe: magnet optics for focusing (e.g. triplet) and electron optics for scanning secondary electrons Ion beam electron optics (Xbeam,Ybeam) coating rastering pattern channeltron hit confirmation by secondary electrons analysis of signal analysis of signal target target Resolution on target determined by beam optics spot size and positioning. Resolution on target: lateral size of field of view divided by linear line pair resolution of sensor.

21 SIRAD upgrade: the Ion Electron Emission Microscope (IEEM)
UV lamp (PEEM) SIRAD contrast diaphragm I I lens PSD Image intensifier The ion impact position on the target is determined by “imaging” the position from which secondary electrons are emitted: the intrinsic resolution is of the order of 0.6 m over a 250 m field of view.

22 IEEM images with UV lamp and ion beam
• Lattice step: 40 mm • Structure width is about 6 mm. • The lattice is made by copper. UV lamp 223 MeV Br ion beam

23 W and Mo X-rays: emission spectra
1.0 W anode, 50kV, 0.1 mm Al filtration Mo anode 30 kV, 0.1 mm Mo filtration 17.4 keV 19.6 keV keV W Mo 0.8 0.6 Photons/(mAsmm2) at 750 mm normalized to maximum 0.4 0.2 0.0 5 10 15 20 25 30 35 40 45 50 Photon energy (keV)


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