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Radiation tests in Padova Giovanni Busetto, Alessandro Paccagnella INFN and Università di Padova.

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Presentation on theme: "Radiation tests in Padova Giovanni Busetto, Alessandro Paccagnella INFN and Università di Padova."— Presentation transcript:

1 Radiation tests in Padova Giovanni Busetto, Alessandro Paccagnella INFN and Università di Padova

2 G. Busetto, A. Paccagnella INFN and Università di Padova Presentation Radiation facilities at the INFN National Laboratories of Legnaro (LNL-INFN): – dedicated ion beam line at the TANDEM accelerator – microbeam at the AN-2000 accelerator – X-ray facility

3 G. Busetto, A. Paccagnella INFN and Università di Padova Dedicated ion beam line TANDEM accelerator, LNL- INFN

4 G. Busetto, A. Paccagnella INFN and Università di Padova Scattering Chamber LNL-INFN

5 G. Busetto, A. Paccagnella INFN and Università di Padova Beam Line Characteristics Device under radiation inside the vacuum chamber (< mbar) Electrical connections via feedthrough: D- type connector with 50 pins and 16 BNCs Under development: wireless connection Ion fluence measurements: –Si diodes (low ion currents) –Faraday cup (high ion currents)

6 G. Busetto, A. Paccagnella INFN and Università di Padova Ions already used

7 G. Busetto, A. Paccagnella INFN and Università di Padova Available Ions List of ions available at the TANDEM accelerator: H, Li, B, C, N, O, F, Mg, Al, Si, P, S, Cl, Ca, Ti, Cr, V, Fe, Ni, Cu, Zn, Ge, Se, Br, Zr, Mo, Ag, I, Au Only Se and Mo have not been tested yet

8 G. Busetto, A. Paccagnella INFN and Università di Padova Radiation tests performed GLAST: test of ASIC (July 2001) / measurement of SEU sensitivity of 5 shift register types Si Microstrip detectors and associated read-out electronics CMOS elementary components (MOS, MOSFETs) Field Programmable Gate Arrays (FPGAs) FLASH EPROM memories III-V solar cells and components (MESFETs, HEMTs)...

9 G. Busetto, A. Paccagnella INFN and Università di Padova Test Circuit (FPGA)

10 G. Busetto, A. Paccagnella INFN and Università di Padova Test circuit (PCB) EPF10K MHz EPC1K8 26c31 26c32 80 m Device under beam

11 G. Busetto, A. Paccagnella INFN and Università di Padova Irradiation with 109 MeV O ions, LET=2.85 MeV cm2/mg

12 G. Busetto, A. Paccagnella INFN and Università di Padova Irradiation with 109 MeV O ions, LET=2.85 MeV cm2/mg

13 G. Busetto, A. Paccagnella INFN and Università di Padova Weibull fit: F(L)=F sat (1- exp{-[(L-L 0 )/W] s }) F sat =3.1·10 -2 cm 2 L 0 =0.1 MeV · cm 2 /mg W=32 s=5

14 G. Busetto, A. Paccagnella INFN and Università di Padova Other facilities Microbeam at the AN-2000 accelerator: –H and He ions, 2 MeV maximum –rastered area 2x2 mm 2 (max) –beam current 10 pA –spot size < 2 m –first tests (May 2001) on FPGAs X-ray facility –under installation

15 G. Busetto, A. Paccagnella INFN and Università di Padova X-ray Semiconductor Irradiation Facility System characteristics: The system is composed of a X-ray machine (Seifert RP149) and an 8 inch wafer probe. Dose rate variable between 10 rad/s and 800 rad/s (for radiation tolerance studies). Diameter of the X-ray beam up to 1 cm in standard use conditions. Maximum power supply voltage: 60 kV. Maximum tube current: 60 mA (at 50 kV maximum).

16 G. Busetto, A. Paccagnella INFN and Università di Padova X-ray Semiconductor Irradiation Facility The system will be assembled at INFN National Laboratory of Legnaro (Padova) November 21th The facility will be ready for operation before the end of 2001.


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