5Beam Line Characteristics Device under radiation inside the vacuum chamber (< mbar)Electrical connections via feedthrough: D-type connector with 50 pins and 16 BNCsUnder development: wireless connectionIon fluence measurements:Si diodes (low ion currents)Faraday cup (high ion currents)
7Available Ions List of ions available at the TANDEM accelerator: H, Li, B, C, N, O, F, Mg, Al, Si, P, S, Cl, Ca, Ti, Cr, V, Fe, Ni, Cu, Zn, Ge, Se, Br, Zr, Mo, Ag, I, AuOnly Se and Mo have not been tested yet
8Radiation tests performed GLAST: test of ASIC (July 2001) / measurement of SEU sensitivity of 5 shift register typesSi Microstrip detectors and associated read-out electronicsCMOS elementary components (MOS, MOSFETs)Field Programmable Gate Arrays (FPGAs)FLASH EPROM memoriesIII-V solar cells and components (MESFETs, HEMTs)...
14Other facilities Microbeam at the AN-2000 accelerator: H and He ions, 2 MeV maximumrastered area 2x2 mm2 (max)beam current <10 pAspot size < 2 mmfirst tests (May 2001) on FPGAsX-ray facilityunder installation
15X-ray Semiconductor Irradiation Facility System characteristics:• The system is composed of a X-ray machine (Seifert RP149) and an 8 inch wafer probe.• Dose rate variable between 10 rad/s and 800 rad/s(for radiation tolerance studies) .• Diameter of the X-ray beam up to 1 cm in standard use conditions.• Maximum power supply voltage: 60 kV.• Maximum tube current: 60 mA (at 50 kV maximum).
16X-ray Semiconductor Irradiation Facility • The system will be assembled at INFN National Laboratory of Legnaro (Padova) November 21th 2001.• The facility will be ready for operation before the end of 2001.